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FCP4N60 600V N-Channel MOSFET
FCP4N60
600V N-Channel MOSFET
Features
* 650V @TJ = 150C * Typ. RDS(on) = 1.0 * Ultra low gate charge (typ. Qg = 12.8nC) * Low effective output capacitance (typ. Coss.eff = 32pF) * 100% avalanche tested
SuperFET
Description
SuperFETTM is, Farichild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
January 2007
TM
D
G GDS
TO-220
FCP Series
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C
(Note 2) (Note 1) (Note 1) (Note 3)
Parameter
- Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed
(Note 1)
FCP4N60
600 3.9 2.5 11.7 30 128 3.9 5.0 4.5 50 0.4 -55 to +150 300
Unit
V A A A V mJ A mJ V/ns W W/C C C
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
Thermal Characteristics
Symbol
RJC RJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
FCP4N60
2.5 83
Unit
C/W C/W
(c)2007 Fairchild Semiconductor Corporation
1
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FCP4N60 Rev. A
FCP4N60 600V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
FCP4N60
Device
FCP4N60
Package
TO-220
TC = 25C unless otherwise noted
Reel Size
--
Tape Width
--
Quantity
50
Electrical Characteristics
Symbol
Off Characteristics BVDSS BVDSS / TJ BVDS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Coss Coss eff. td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr
Notes:
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Avalanche Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Conditions
VGS = 0V, ID = 250A, TJ = 25C VGS = 0V, ID = 250A, TJ = 150C ID = 250A, Referenced to 25C VGS = 0V, ID = 3.9A VDS = 600V, VGS = 0V VDS = 480V, TC = 125C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 2.0A VDS = 40V, ID = 2.0A VDS = 25V, VGS = 0V, f = 1.0MHz
(Note 4)
Min
600 -------3.0 ----------(Note 4, 5)
Typ
-650 0.6 700 -----1.0 3.2 415 210 19.5 12 32 16 45 36 30 12.8 2.4 7.1 ---277 2.07
Max Units
----1 10 100 -100 5.0 1.2 -540 275 -16 -45 100 85 70 16.6 --3.9 11.7 1.4 --V V V/C V A A nA nA V S pF pF pF pF pF ns ns ns ns nC nC nC A A V ns C
On Characteristics
Dynamic Characteristics
VDS = 480V, VGS = 0V, f = 1.0MHz VDS = 0V to 400V, VGS = 0V VDD = 300V, ID = 3.9A RG = 25
Switching Characteristics
---------
VDS = 480V, ID = 3.9A VGS = 10V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 3.9A VGS = 0V, IS = 3.9A dIF/dt =100A/s
(Note 4)
--
1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 1.9A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 3.9A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics
FCP4N60 Rev. A
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FCP4N60 600V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
10
VGS Top : 15.0 V 10.0 V 8.0V 7.5 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V
Figure 2. Transfer Characteristics
10
1
ID, Drain Current [A]
ID , Drain Current [A]
150 C
o
1
10
0
25 C -55 C
* Note 1. VDS = 40V 2. 250s Pulse Test
o
o
* Notes : 1. 250s Pulse Test
0.1
2. TC = 25 C
o
0.1
1
10
10
-1
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue
RDS(ON) [],Drain-Source On-Resistance
4
3
VGS = 10V
2
IDR , Reverse Drain Current [A]
10
1
10
0
1
VGS = 20V
150 C
o
25 C
* Notes : 1. VGS = 0V 2. 250s Pulse Test
o
* Note : TJ = 25 C
o
0 0.0
2.5
5.0
7.5
10.0
12.5
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
ID, Drain Current [A]
VSD , Source-Drain Voltage [V]
Figure 5. Capacitance Characteristics
1200
Figure 6. Gate Charge Characteristics
12
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
VDS = 120V
VGS, Gate-Source Voltage [V]
1000
10
VDS = 300V VDS = 480V
Capacitance [pF]
800
* Notes : 1. VGS = 0 V 2. f = 1 MHz
8
600
Coss Ciss
6
400
4
200
2
* Note : ID = 3.9A
Crss
0 0 10 10
1
0
0
5
10
15
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
FCP4N60 Rev. A
3
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FCP4N60 600V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2
Figure 8. On-Resistance Variation vs. Temperature
3.0
BVDSS, (Normalized) Drain-Source Breakdown Voltage
Drain-Source On-Resistance
2.5
1.1
RDS(ON), (Normalized)
2.0
1.0
1.5
0.9
*Notes : 1. VGS = 0 V 2. ID = 250A
1.0
*Notes : 1. VGS = 10 V 2. ID = 2.0 A
0.5
0.8 -100
-50
0
50
100
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case Temperature
4
Operation in This Area is Limited by R DS(on)
10
1
10 us 100 us 1 ms
ID, Drain Current [A]
3
ID, Drain Current [A]
10
0
10 ms DC
* Notes : o 1. TC = 25 C 2. TJ = 150 C
o
2
1
10
-1
3. Single Pulse
10
0
10
1
10
2
10
3
0 25
50
75
100
o
125
150
VDS, Drain-Source Voltage [V]
TC, Case Temperature [ C]
Figure 11-1. Transient Thermal Response Curve
ZJC(t), Thermal Response
10
0
D = 0 .5 0 .2 0 .1 0 .0 5
* N o te s : 1 . Z J C (t) = 2 .5 C /W M a x. 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t)
o
10
-1
0 .0 2 0 .0 1 sin g le p u lse
PDM t1 t2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a ve P u ls e D u ra tio n [s e c ]
FCP4N60 Rev. A
4
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FCP4N60 600V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FCP4N60 Rev. A
5
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FCP4N60 600V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FCP4N60 Rev. A
6
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FCP4N60 600V N-Channel MOSFET
Mechanical Dimensions
TO-220
Dimensions in Millimeters
FCP4N60 Rev. A
7
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DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only.
Rev. I23
2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
No Identification Needed
Full Production
Obsolete
Not In Production
(c) 2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com

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