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| SEMiX 302GB066HD Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMiX(R) 2 Trench IGBT Modules SEMiX 302GB066HD SEMiX 302GAL066HD SEMiX 302GAR066HD Target Data Inverse diode Characteristics Symbol Conditions IGBT min. typ. max. Units Features Typical Applications Remarks Inverse Diode Thermal characteristics Temperature sensor Mechanical data GB GAL GAR 1 24-11-2005 GES (c) by SEMIKRON SEMiX 302GB066HD Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 2 24-11-2005 GES (c) by SEMIKRON SEMiX 302GB066HD Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT Fig. 10 Transient thermal impedance of FWD Fig. 11 CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current 3 24-11-2005 GES (c) by SEMIKRON SEMiX 302GB066HD Fig. 13 Typ. CAL diode recovered charge This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 24-11-2005 GES (c) by SEMIKRON |
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