Part Number Hot Search : 
E003586 RL104 CEPF640 BA222 17223 RL107 4741A HERAF
Product Description
Full Text Search
 

To Download TM10T3B-M Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 MITSUBISHI THYRISTOR MODULES
TM10T3B-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
TM10T3B-M,-H
* IO * VRRM * * * *
DC output current ...................... 20A Repetitive peak reverse voltage ........ 400/800V VDRM Repetitive peak off-state voltage ........ 400/800V 3 Phase Mix Bridge Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271
APPLICATION DC motor control, NC equipment, AC motor control, contactless switches, electric furnace temperature control, light dimmers
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
80 2 2 2-4.5
P
T K GT GS GR 17
34
S
R
22
GR
GS
GT
K
R S
N 17 68
P
7.5
T N
Tab#110, t=0.5
7
Tab#250, t=0.8
18.5
LABEL
6
31
2
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM10T3B-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VRRM VRSM VR (DC) VDRM VDSM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage Non-repetitive peak off-state voltage DC off-state voltage Voltage class M 400 480 320 400 480 320 H 800 960 640 800 960 640 Unit V V V V V V
Symbol IO ITSM, IFSM I2t di/dt PGM PG (AV) VFGM VRGM IFGM Tj Tstg Viso -- --
Parameter DC output current Surge (non-repetitive) current I2t for fusing Critical rate of rise of on-state current Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Isolation voltage Mounting torque Weight Charged part to case Mounting screw M4 Typical value
Conditions 3-phase fullwave rectified, TC=79C One half cycle at 60Hz, peak value Value for one cycle of surge current VD=1/2VDRM, IG=0.5A, Tj=125C
Ratings 20 200 1.7 x 102 50 5.0 0.5 10 5.0 2.0 -40~125 -40~125 2500 0.98~1.47 10~15 130
Unit A A A2s A/s W W V V A C C V N*m kg*cm g
ELECTRICAL CHARACTERISTICS
Limits Symbol IRRM IDRM VTM, VFM dv/dt VGT VGD IGT Rth (j-c) Rth (c-f) -- Parameter Repetitive peak reverse current Repetitive peak off-state current Forward voltage Critical rate of rise of off-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Thermal resistance Contact thermal resistance Insulation resistance Tj=125C, VRRM applied Tj=125C, VDRM applied Tj=125C, ITM=IFM=20A, instantaneous meas. Tj=125C, VD=2/3VDRM Tj=25C, VD=6V, RL=2 Tj=125C, VD=1/2VDRM Tj=25C, VD=6V, RL=2 Junction to case (per 1/6 module) Case to fin, Conductive grease applied (per 1/6 module) Measured with a 500V megohmmeter between main terminal and case Test conditions Min. -- -- -- 500 -- 0.25 10 -- -- 10 Typ. -- -- -- -- -- -- -- -- -- -- Max. 4.0 4.0 1.3 -- 2.0 -- 50 4.5 0.6 -- Unit mA mA V V/s V V mA C/ W C/ W M
Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables.
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM10T3B-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
MAXIMUM RATINGS
Item Thyristor Diode -- -- -- -- VRRM VRSM VR (DC) VDRM VDSM VD (DC) IT (RMS) IF (RMS) IT (AV) IF (AV) ITSM IFSM I2t di/dt
Item Thyristor Diode
PGM
PG (AV)
VFGM
IFGM
Tj
Tstg
--
--
--
--
ELECTRICAL CHARACTERISTICS
Item Thyristor Diode -- -- -- -- -- IRRM IDRM VTM VFM dv/dt VGT VGD IGT Rth (j-c) Rth (c-f)
PERFORMANCE CURVES
MAXIMUM FORWARD CHARACTERISTIC RATED SURGE (NON-REPETITIVE) CURRENT
SURGE (NON-REPETITIVE) CURRENT (A)
10 3 Tj=125C 7 5
CURRENT (A)
200
160
3 2 10 2 7 5 3 2 10 1 0.8 1.0 1.2 1.4 1.6 1.8
120
80
40
0
1
23
5 7 10
20 30
50 70100
FORWARD VOLTAGE (V)
CONDUCTION TIME (CYCLE AT 60Hz)
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM10T3B-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) (PER SINGLE ELEMENT) TRANSIENT THERMAL IMPEDANCE (C/W)
10 0 2 3 5 710 1 5.0
MAXIMUM POWER DISSIPATION (THREE PHASE FULLWAVE RECTIFIED)
80
(W)
70 60 50 40 30 20 10
RESISTIVE, INDUCTIVE LOAD
POWER DISSIPATION
4.0
120 90 60 =30
3.0
2.0
1.0 0 10 -3 2 3 5 7 10 -2 2 3 5 7 10 -12 3 5 7 10 0
0
0
5
10
15
20
TIME (s)
DC OUTPUT CURRENT
(A)
LIMITING VALUE OF THE DC OUTPUT CURRENT (THREE PHASE FULLWAVE RECTIFIED)
130 120
(C) CASE TEMPERATURE
110 100 90 80 70 60 50 40 30 0 5 10 15 20 =30 60 90 120
DC OUTPUT CURRENT
(A)
Feb.1999


▲Up To Search▲   

 
Price & Availability of TM10T3B-M

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X