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| LAB MECHANICAL DATA Dimensions in mm (inches) 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) SEME 2N6800 N-CHANNEL POWER MOSFET BVDSS ID RDS(on) 400V 3.0A W 1.0W 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) d ia . 5 .0 8 (0 .2 0 0 ) ty p . 0 .6 6 (0 .0 2 6 ) 1 .1 4 (0 .0 4 5 ) 0 .7 1 (0 .0 2 8 ) 0 .8 6 (0 .0 3 4 ) ! 2 .5 4 (0 .1 0 0 ) FEATURES * AVALANCHE ENERGY RATED * HERMETICALLY SEALED * DYNAMIC dv/dt RATING 45 TO39 - Package Pin 1 - Source Pin 2 - Gate Pin 3 - Drain Also available in a low profile version. * SIMPLE DRIVE REQUIREMENTS ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VGS ID ID IDM PD dv/dt TJ , Tstg RqJC RqJCA Gate - Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Power Dissipation @ Tcase = 25C Linear Derating Factor Peak Diode Recovery 3 20V (VGS = 10V , Tcase = 25C) (VGS = 10V , Tcase = 100C) 3A 2A 12A 25W 0.20W/C 4V/ns -55 to 150C 5.0C/W 175C/W Operating and Storage Temperature Range Thermal Resistance Junction to Case Thermal Resistance Junction-to-Ambient Notes 1) Pulse Test: Pulse Width 300ms, d 2% 2) @ VDD = 50V , L 0.100mH , RG = 25W , Peak IL = 1.5A , Starting TJ = 25C 3) @ ISD 1.5A , di/dt 50A/ms , VDD BVDSS , TJ 150C , SUGGESTED RG = 7.5W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 9/00 LAB ELECTRICAL CHARACTERISTICS (Tamb = 25C unless otherwise stated) Parameter BVDSS STATIC ELECTRICAL RATINGS Drain - Source Breakdown Voltage SEME 2N6800 Test Conditions VGS = 0 ID = 1mA VGS = 10V VGS = 10V VDS = VGS VDS 15V VGS = 0 VGS = 20V VGS = -20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V ID = 3A ID = 2A ID = 3A ID = 250mA IDS = 2A TJ = 125C ID = 1mA Min. 400 Typ. Max. Unit V DBVDSS Temperature Coefficient of DTJ Breakdown Voltage RDS(on) Static Drain to Source On-State Resistance Forward Transconductance Zero Gate Voltage Drain Current Forward Gate - Source Leakage Reverse Gate - Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate - Source Charge Gate - Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Reference to 25C 0.37 1 1.15 2 2 25 250 100 -100 620 200 75 19.1 1 6.7 33 5.8 19.9 30 35 55 35 3 12 4 V / C W V S(W )W( 9/00 VGS(th) Gate Threshold Voltage gfs IDSS IGSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr ton LD LS VDS = 0.8xMax Rating mA nA pF VDS = Max Rating x 0.5 nC VDD = 200V ID = 3A VGS = 10V RG = 7.5W ns SOURCE - DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current 2 A V ns Diode Forward Voltage Reverse Recovery TimeReverse Recovery Charge Forward Turn-On Time IS = 3.0A VGS = 0 IF = 3.0A TJ = 25C TJ = 25C Negligible 5 15 1.4 700 6.2 di / dt 100A/ms VDD 50V mC nH PACKAGE CHARACTERISTICS Internal Drain Inductance (from centre of drain pad to die) Internal Source Inductance (from centre of source pad to end of source bond wire) Notes 1) Pulse Test: Pulse Width 300ms, d 2% 2) Repetitive Rating - Pulse width limited by maximum junction temperature. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk |
Price & Availability of 2N6800
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