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DISCRETE SEMICONDUCTORS
DATA SHEET
BLW81 UHF power transistor
Product specification March 1993
Philips Semiconductors
Product specification
UHF power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltages up to 13,5 V. The resistance stabilization of the transistor provides protection against device damage at severe load mismatch conditions. The transistor is housed in a 14" capstan envelope with a ceramic cap.
BLW81
QUICK REFERENCE DATA R.F. performance up to Th = 25 C in an unneutralized common-emitter class-B circuit MODE OF OPERATION c.w. c.w. VCE V 12,5 12,5 f MHz 470 175 PL W 10 10 > Gp dB 6,0 > typ. 13,5 % 60 typ. 60 zi 1,3 + j2,5 1,2 - j0,6 YL mS 150 - j66 140 - j80
PIN CONFIGURATION
PINNING - SOT122A. PIN 1 2 DESCRIPTION collector emitter base emitter
handbook, halfpage
4 1 3
3 4
2 Top view
MBK187
Fig.1 Simplified outline. SOT122A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
March 1993
2
Philips Semiconductors
Product specification
UHF power transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (d.c. or average) Collector current (peak value); f > 1 MHz R.F. power dissipation (f > 1 MHz); Tmb = 25 C Storage temperature Operating junction temperature VCESM VCEO VEBO IC ICM Ptot Tstg Tj max max max max max max max 36 V 17 V 4V 2,5 A 7,5 A
BLW81
40 W 200 C
-65 to +150 C
MGP573
handbook, halfpage
10
MGP574
handbook, halfpage
50
IC (A)
Prf (W)
r.f. power dissipation VCE 16.5 V f > 1 MHz
40
short time operation during mismatch derate by 0.204 W/K continuous operation
30
Tmb = 25 C
20
Th = 70 C
10
1 1 10 VCE (V) 102
0 0 50 Th (C) 100
Fig.2
Fig.3
THERMAL RESISTANCE From junction to mounting base From mounting base to heatsink Rth j-mb Rth mb-h = = 4,3 K/W 0,6 K/W
March 1993
3
Philips Semiconductors
Product specification
UHF power transistor
CHARACTERISTICS Tj = 25 C Breakdown voltages Collector-emitter voltage VBE = 0; IC = 25 mA Collector-emitter voltage open base; IC = 100 mA Emitter-base voltage open collector; IE = 10 mA Collector cut-off current VBE = 0; VCE = 17 V D.C. current gain (1) IC = 1,25 A; VCE = 5 V Collector-emitter saturation voltage (1) IC = 3,75 A; IB = 0,75 A Transition frequency at f = 500 MHz (1) IC = 1,25 A; VCE = 12,5 V IC = 3,75 A; VCE = 12,5 V Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 12,5 V Feedback capacitance at f = 1 MHz IC = 100 mA; VCE = 12,5 V Collector-stud capacitance Note 1. Measured under pulse conditions: tp 200 s; 0,02. Cre Ccs typ typ Cc typ fT fT typ typ VCEsat typ hFE > typ ICES < V(BR)EBO > V(BR)CEO > V(BR)CES >
BLW81
36 V 17 V 4V
10 mA
10 35
0,75 V
1,3 GHz 0,9 GHz
34 pF
18 pF 1,2 pF
March 1993
4
Philips Semiconductors
Product specification
UHF power transistor
BLW81
MGP575
handbook, halfpage
40
VCE = 5 V typ Tj = 25 C
handbook, halfpage
60
MGP576
IE = Ie = 0 f = 1 MHz Tj = 25 C
hFE 30
Cc (pF) 40
typ
20
20 10
0 0 2.5 5 IC (A) 7.5
0 0 10 VCB (V) 20
Fig.4
Fig.5
handbook, full pagewidth
2
MGP577
VCE = 12.5 V f = 500 MHz Tj = 25 C
fT (GHz) 1.5
typ 1
0.5
0 0 2.5 5 IC (A) 7.5
Fig.6
March 1993
5
Philips Semiconductors
Product specification
UHF power transistor
APPLICATION INFORMATION R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); Th = 25 C f (MHz) 470 470 175 VCE (V) 12,5 13,5 12,5 PL (W) 10 10 10 PS (W) < 2,5 typ 1,9 typ 0,45 GP (dB) > 6,0 typ 7,2 typ 13,5 IC (A) < 1,33 - - (%) > 60 typ 75 typ 60 zi () 1,3 + j2,5 - 1,2 - j0,6
BLW81
YL (mS) 150 - j66 - 140 - j80
handbook, full pagewidth
C1 C2 50 C5 T.U.T. L3 C3 C4 L2 C6 C7 R1 C8 R2 L5 C10 50 C9
L1
L4 +VCC
MGP578
Fig.7 Class-B test circuit at f = 470 MHz. List of components: C1 = 2,2 pF ( 0, 25 pF) ceramic capacitor C2 = C9 = C10 = 2 to 18 pF film dielectric trimmer (cat. no. 2222 809 09003) C3 = 3,9 pF ( 0,25 pF) ceramic capacitor C4 = 1,4 to 5,5 pF film dielectric trimmer (cat. no. 2222 809 09001) C5 = C6 = 15 pF ceramic chip capacitor (cat. no. 2222 851 13159) C7 = 100 pF ceramic feed-through capacitor C8 = 100 nF polyester capacitor L1 = stripline (27,9 mm x 6,0 mm) L2 = 13 turns closely wound enamelled Cu wire (0,5 mm); int. dia. = 4 mm; leads 2 x 5 mm L3 = 17 nH; 112 turns enamelled Cu wire (1 mm); spacing 1 mm; int. dia. = 6 mm; leads 2 x 5 mm L4 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) L5 = stripline (45,8 mm x 6,0 mm) L1 and L5 are striplines on a double Cu-clad printed circuit board with PTFE fibre-glass dielectric (r = 2,74); thickness 1/16". R1 = 1 ( 5%) carbon resistor R2 = 10 ( 5%) carbon resistor Component layout and printed-circuit board for 470 MHz test circuit (Fig.8).
March 1993
6
Philips Semiconductors
Product specification
UHF power transistor
BLW81
124
handbook, full pagewidth
56
R1 C3 C1 L2 C2 L1 C5 C6 C4 L3 C7 C9 rivet C10
L5
R2
L4 C8
+VCC
MGP579
The circuit and the components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets.
Fig.8 Component layout and printed-circuit board for 470 MHz test circuit.
March 1993
7
Philips Semiconductors
Product specification
UHF power transistor
BLW81
handbook, halfpage
30
MGP580
MGP581
PL (W) 20
f = 470 MHz typical values
VCC = 12.5 V VCC = 13.5 V
handbook, halfpage
10
f = 470 MHz Th = 25 C typical values
VCC = 12.5 V VCC = 13.5 V
100
Gp (dB)
(%)
Th = 25 C 5 70 C Gp 50
10
0 0 2.5 PS (W) 5
0 0 10 20 PL (W)
0 30
Fig.9
Fig.10
Measuring conditions for R.F. SOAR f = 470 MHz Th = 70 C Rth mb-h = 0,6 K/W VCCnom = 12,5 V or 13,5 V PS = PSnom at VCCnom and VSWR = 1 measured in the circuit of Fig.7. The transistor has been developed for use with unstabilized supply voltages. As the output power and drive power increase with the supply voltage, the nominal output power must be derated in accordance with the graph for safe operation at supply voltages other than the nominal. The graph shows the permissible output power under nominal conditions (VSWR = 1), as a function of the expected supply over-voltage ratio, with VSWR as parameter. The graph applies to the situation in which the drive (PS/PSnom ) increases linearly with supply over-voltage ratio.
handbook, halfpage
15
MGP582
PLnom (W) VSWR = 1 13 VSWR = 2.25 5
11
10
50 PS PSnom 9 1 1.1 1.2 VCC VCCnom 1.3
Fig.11
March 1993
8
Philips Semiconductors
Product specification
UHF power transistor
OPERATING NOTE Below 200 MHz a base-emitter resistor of 10 is recommended to avoid oscillation. This resistor must be effective for r.f. only.
BLW81
MGP583
handbook, halfpage
20
Gp (dB) 15
power gain versus frequency (class-B operation)
10
5 100 Measuring conditions: VCC = 12,5 V PL = 10 W Th = 25 C typical values
300
f (MHz)
500
Fig.12
MGP584
MGP585
handbook, halfpage impedance (series components) input
4
handbook, halfpage impedance (parallel components) load
8
0 CL (pF) -50
ri, xi ()
versus frequency (class-B operation)
RL () xi 7.5
versus frequency (class-B operation) CL
2 ri ri
RL
0
7 CL xi RL
-100
-2 100 Measuring conditions: VCC = 12,5 V PL = 10 W Th = 25 C typical values
300
f (MHz)
500
6.5 100 Measuring conditions: VCC = 12,5 V PL = 10 W Th = 25 C typical values
300
f (MHz)
-150 500
Fig.13
Fig.14
March 1993
9
Philips Semiconductors
Product specification
UHF power transistor
PACKAGE OUTLINE Studded ceramic package; 4 leads
BLW81
SOT122A
D
ceramic BeO metal c
A
Q N1 D1
A w1 M A M W
N
D2
N3 X M1
H b
detail X
4 L
3 H 1
2
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm A 5.97 4.74 b 5.85 5.58 c 0.18 0.14 D 7.50 7.23 D1 6.48 6.22 D2 7.24 6.93 H 27.56 25.78 L 9.91 9.14 M1 3.18 2.66 M 1.66 1.39 N 11.82 11.04 N1 max. 1.02 N3 3.86 2.92 Q 3.38 2.74 W 8-32 UNC w1 0.381
90
OUTLINE VERSION SOT122A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-04-18
March 1993
10
Philips Semiconductors
Product specification
UHF power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLW81
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
March 1993
11

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