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38 GHz LNA Technical Data
HMMC-5038
Features
* Low Noise Figure: 4.8 dB * Frequency Range: 37-40GHz * High Gain (Adjustable): 3 V, 120 mA @ 23 dB Gain 3 V, 80 mA @ 20 dB Gain * 50 Input/Output Matching
Description
The HMMC-5038 MMIC is a highgain low-noise amplifier (LNA) designed for communication receivers that operate from 37 GHz to 40 GHz. The gain of this four stage LNA can be adjusted by altering the gate bias of the output two, or three, stages while maintaining optimum noise figure bias for the input stage(s). Large FETs provide high power handing capability to avoid power compression. The backside of the chip is both RF and DC ground. This helps simplify the assembly process and reduce assembly related performance variations and costs. The HMMC-5038 is fabricated using a PHEMT integrated circuit structure that provides good noise and gain performance. Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions: 1630 x 760 m (64.2 x 29.9 mils) 10 m ( 0.4 mils) 127 15 m (5.0 0.6 mils) 80 x 80 m (3.1 x 3.1 mils)
Absolute Maximum Ratings[1]
Symbol VD1, 2-3-4 IG1, 2-3-4 IDD Pin Tch TA TSTG Tmax Parameters/Conditions Drain Supply Voltages Gate Supply Voltages Total Drain Current RF Input Power Channel Temperature[2] Backside Ambient Temp. Storage Temperature Maximum Assembly Temp. Units V V mA dBm C C C
C
Min. -3.0
Max. 5 0 300 15 +160
-55 -65
+125 +165
+310
Note: 1. Absolute maximum ratings for continuous operation unless otherwise noted. 2. Refer to DC Specifications/Physical Properties table for derating information.
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5965-5445E
DC Specifications/Physical Properties [1]
Symbol VD1, 2-3-4 ID1 ID2-3-4 VG1, 2, 3-4 Vp ch-bs Tch Parameters and Test Conditions Low Noise Drain Supply Operating Voltages First Stage Drain Supply Current (VDD = 3 V, VG1 = -0.8 V) Drain Supply Current for Stages 2, 3, and 4 Combined (VDD = 3 V, VGG = -0.8 V) Gate Supply Operating Voltages (IDD = 120 mA) Pinch-off Voltage (VDD = 3 V, IDD 10 mA) Thermal Resistance [2] (Channel-to-Backside @ Tch = 160C) Channel Temperature [3] (TA = 125C, MTTF > 106 hrs, VDD = 3 V, IDD = 120 mA) Units V mA mA V V C/W C -2 Min. 2 Typ. 3 22 98 -0.8 -1.2 62 150 -0.8 Max. 5
Notes: 1. Backside ambient operating temperature TA = 25C unless otherwise noted. 2. Thermal resistance (C/Watt) at a channel temperature T (C) can be estimated using the equation: (T) 62 x [T(C)+ 273] / [160C + 273]. 3. Derate MTTF by a factor of two for every 8C above Tch.
RF Specifications, TA = 25C, VDD = 3 V, IDD = 120 mA, Z o = 50
Symbol BW S21 S21 (RLin)MIN (RLout)MIN S12 P-1dB NF Parameters and Test Conditions Operating Bandwidth Small Signal Gain[1] Small Signal Gain Flatness Minimum Input Return Loss w/o external capacitive matching [2] Minimum Output Return Loss Reverse Isolation Output Power @ 1dB Gain Compression Noise Figure [3] Units GHz dB dB dB dB dB dBm dB Min. 37 20 8 12 Typ. 23 0.5 12 18 50 12 4.8 Max. 40
Notes: 1. Gain may be reduced by biasing for lower IDD. Increasing IDD will increase Gain. 2. Minimum input return may be improved by approximately 3 dB by including a small capacitive (~30 fF) stub on the input transmission line. 3. Noise Figure may be further reduced by optimizing DC bias conditions.
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Applications
The HMMC-5038 low noise amplifier (LNA) is designed for use in digital radio communication systems and point-tomultipoint links that operate within the 37 GHz to 40 GHz frequency band. High gain and low noise temperature make it ideally suited as a front-end gain stage in the receiver. The MMIC solution is a cost effective alternative to hybrid assemblies.
The third and fourth stage DC gate bias lines are connected internally. A total of three DC gate bond wires are required: One for VG1, one for VG2, and one for the VG3-to-VG4 connection as shown in Figure 1. A DC blocking capacitor is needed in the RF input transmission line only if there is DC voltage present. The RF output is AC-coupled. Optimum input match is achieved when an optional capacitive (~30 fF) stub is included on the input transmission line. This capacitance compliments the bond wire inductance to complete the input matching network. No ground wires are needed because ground connections are made with plated through-holes to the backside of the device.
It is recommended that the RF input and RF output connections be made using either 500 line/inch (or equivalent) gold wire mesh, or dual 0.7 mil diameter gold wire. The RF wires should be kept as short as possible to minimize inductance. The bias supply can be 0.7 mil diameter gold wires. Thermosonic wedge is the preferred method for wire bonding to the gold bond pads. Mesh wires can be attached using a 2 mil round tacking tool and a tool force of approximately 22 grams with an ultrasonic power of roughly 55 dB for a duration of 76 8 msec. A guidedwedge at an ultrasonic power level of 64 dB can be used for the 0.7 mil wire. The recommended wire bond stage temperature is 150 2C. For more detailed information see HP application note #999 "GaAs MMIC Assembly and Handling Guidelines."
GaAs MMICs are ESD sensitive. Proper precautions should be used when handling these devices.
Biasing and Operation
The recommended DC bias condition is with all drains connected to single 3 volt supply and all gates connected to an adjustable negative voltage supply as shown in Figure 1(a). The gate voltage is adjusted for a total drain supply current of typically 120 mA. Reducing the current in stages 3 and 4 will reduce the overall gain. The gain can be adjusted further by altering the current through stage 2 with little affect on noise figure. Optimum noise figure is realized with VD1= 3 to 4 volts and ID1 = 20 to 25 mA. The second, third, and fourth stage DC drain bias lines are connected internally and therefore require only a single bond wire. An additional bond wire is needed for the first stage DC drain bias, VD1.
Assembly Techniques
A conductive epoxy such as ABLEBOND(R) 71-1LM1 or ABLEBOND(R) 84-1LM1 is the recommended assembly method provided the Absolute Maximum Thermal Ratings are not exceeded. Solder die attach using a fluxless gold-tin (AuSn) solder preform may also be used. The device should be attached to an electrically conductive surface to complete the DC and RF ground paths. The backside metallization on the device is gold.
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(100 pF)
(100 pF)
(a) Single drain-supply and single gate-supply assembly.
(100 pF)
(100 pF)
(b) Separate first-stage gate bias supply. This diagram shows an optional variation to the VG2 jumper-wire bonding scheme presented in (a). Figure 1. HMMC-5038 Common Assembly Diagrams. (Note: To assure stable operation, bias supply feeds should be bypassed to ground with a capacitor, Cb > 100 nF typical.)
0 80 760
350
620
820
1070
1360
660 500 330
80 0 0 120 600 1090 1550 1630 0
Figure 2. HMMC-5038 Bonding Pad Locations. (Dimensions in micrometers)
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40
VDD = 3.0 V, ID1 = 25 mA, ID2,3,4 = 95 mA
0
4
VDD = 3.0 V, ID1 = 25 mA, ID2,3,4 = 95 mA Spec Range (37 - 40 GHz)
4
VDD = 4.0 V, ID1 = 25 mA, ID2,3,4 = 60 to 125 mA 10
12
20 Isolation 10 Spec Range (37 - 40 GHz)
50
Input
12
NOISE FIGURE (dB)
30
Gain
8
OUTPUT RETURN LOSS (dB)
REVERSE ISOLATION (dB)
INPUT RETURN LOSS (dB)
SMALL SIGNAL GAIN (dB)
8
8
Spec Range (37 - 40 GHz)
6
16
16
4
20
Output
20
2
0 36
37
38
39
40
41
42
100 43
24 36
37
38
39
40
41
42
24 43
0 36
37
38
39
40
41
42
43
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 3. Gain and Isolation vs. Frequency.
VDD = 3.0 V
Figure 4. Input and Output Return Loss vs. Frequency.
VDD = 4.0 V, I D1 = 25 mA Gain P-1
Figure 5. Noise Figure vs. Frequency.
7
30
20
30
NOISE FIGURE (dB)
6
Gain
25
15
25
GAIN (dB)
5
20
10
20
4 Noise Figure 3 40 60 80 100 IDD (mA) 120 140
15
5
15
10 160
0 40
60
80
100
120
10 140
ID2,3,4 (mA)
Figure 6. 38 GHz Noise Figure and Gain vs. IDD.
Figure 7. 38 GHz Gain and Power Performance vs. ID2,3,4.
This data sheet contains a variety of typical and guaranteed performance data. The information supplied should not be interpreted as a complete list of circuit specifications. In this data sheet the term typical refers to the 50th percentile performance. For additional information contact your local HP sales representative.
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GAIN (dB)
P-1 (dBm)

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