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| Infrared Light Emitting Diodes LN58 GaAs Infrared Light Emitting Diode Unit : mm For optical control systems 4.50.3 1.2 2.90.25 High-power output, high-efficiency : PO = 3.5 mW (typ.) Emitted light spectrum suited for silicon photodetectors Infrared light emission close to monochromatic light : P = 950 nm (typ.) Small size, thin side-view type package 3.90.3 12.8 min. 2.8 2.4 1.5 Features 2-1.20.3 2-0.450.15 1 2.54 R1.2 2 0.450.15 Absolute Maximum Ratings (Ta = 25C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * R0.6 Symbol PD IF IFP * Ratings 75 50 1 3 -25 to +85 -30 to+100 Unit mW mA A V C C Not soldered o2.4 0.9 1.70.2 0.8 1: Cathode 2: Anode VR Topr Tstg f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25C) Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Half-power angle Symbol PO P VF IR Ct Conditions IF = 50mA IF = 50mA IF = 50mA IF = 50mA VR = 3V VR = 0V, f = 1MHz The angle in which radiant intencity is 50% min 1.8 typ 3.5 950 50 max Unit mW nm nm 1.5 10 35 35 V A pF deg. 1 Infrared Light Emitting Diodes LN58 IF -- Ta 60 10 2 IFP -- Duty cycle 80 Ta = 25C 70 IF -- VF Ta = 25C IF (mA) IFP (A) 50 IF (mA) Forward current 10 -1 1 10 10 2 10 60 50 40 30 20 10 Allowable forward current 40 Pulse forward current 1 30 10 -1 20 10 10 -2 0 - 25 0 20 40 60 80 100 10 -3 10 -2 0 0 0.4 0.8 1.2 1.6 Ambient temperature Ta (C ) Duty cycle (%) Forward voltage VF (V) IFP -- VF 10 4 tw = 10s Duty Cycle = 0.1% Ta = 25C 120 PO -- IF 10 3 Ta = 25C 100 PO -- IFP tw = 10s (1) f = 100Hz (2) f = 21kHz (3) f = 42kHz (4) f = 60kHz Ta = 25C IFP (mA) Relative radiant power PO Relative radiant power PO 10 3 10 2 80 Pulse forward current 10 2 (1) 10 (2) (4) (3) 1 60 10 40 1 20 10 -1 0 1 2 3 4 5 0 0 10 20 30 40 50 60 10 -1 10 10 2 10 3 10 4 Forward voltage VF (V) Forward current IF (mA) Pulse forward current IFP (mA) VF -- Ta 1.6 10 3 PO -- Ta 1000 IF = 50mA P -- Ta IF = 50mA Peak emission wavelength P (nm) 0 40 80 120 VF (V) 1.2 Relative radiant power PO IF = 50mA 10mA 1mA 980 10 2 960 Forward voltage 0.8 940 10 0.4 920 0 - 40 0 40 80 120 1 - 40 900 - 40 0 40 80 120 Ambient temperature Ta (C ) Ambient temperature Ta (C ) Ambient temperature Ta (C ) 2 LN58 Infrared Light Emitting Diodes Spectral characteristics 100 IF = 50mA Ta = 25C Directivity characteristics 0 100 10 20 10 2 Frequency characteristics Ta = 25C Relative radiant intensity (%) 80 80 70 Relative radiant intensity(%) 90 30 10 60 60 50 40 40 50 60 70 80 90 Modulation output 1 40 30 20 20 10 -1 0 860 900 940 980 1020 1060 1100 10 -2 1 10 10 2 10 3 Wavelength (nm) Frequency f (kHz) 3 |
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