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| Ordering number : ENN7512 30A01SP PNP Epitaxial Planar Silicon Transistor 30A01SP Low-Frequency General-Purpose Amplifier Applications Applications * Package Dimensions unit : mm 2033A [30A01SP] 4.0 3.0 2.2 Low-frequency power amplifier, muting circuit. Features * * * 0.6 0.4 15.0 1.8 Large current capacity. Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=0.67[IC=0.3A, IB=15mA]. Small ON-resistance (Ron). 0.4 0.5 0.4 12 1.3 0.7 3 1.3 Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 1 : Emitter 2 : Collector 3 : Base SANYO : SPA Ratings --30 --30 --5 --300 --600 400 150 --55 to +150 Unit V V V mA mA mW C C 3.0 3.8nom Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE Conditions VCB=-30V, IE=0 VEB=-4V, IC=0 VCE=-2V, IC=--10mA Ratings min typ max --0.1 --0.1 200 500 Unit A A Marking : XQ 0.7 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O3003 TS IM TA-100647 No.7512-1/4 30A01SP Continued from preceding page. Parameter Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions VCE=--10V, IC=--50mA VCB=--10V, f=1MHz IC=--100mA, IB=--5mA IC=--100mA, IB=--5mA IC=--10A, IE=0 IC=--1mA, RBE= IE=--10A, IC=0 See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. --30 --30 --5 39 200 48 Ratings min typ 520 3 -110 --0.9 --220 --1.2 max Unit MHz pF mV V V V V ns ns ns Switching Time Test Circuit PW=20s D.C.1% INPUT IB1 OUTPUT IB2 VR 50 RB + 220F VBE=5V IC=20IB1= --20IB2= --100mA + 470F VCC= --12V RL --200 --180 IC -- VCE --1 .6m A --400 IC -- VBE VCE= --2V Collector Current, IC -- mA Collector Current, IC -- mA --160 --140 --120 --100 --80 --60 --40 --20 0 0 --1 --2.0 .8m A m --1.4 1.2m A -- A --1.0mA --0.8mA --0.6mA --0.4mA --300 mA --200 Ta= 75 C --100 0 0 --0.2 --0.4 --0.6 --0.2mA IB=0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 --0.8 25C --25 C --1.0 IT04097 3 5 7--1000 IT04099 Collector-to-Emitter Voltage, VCE -- V 1000 7 5 IT04096 --1000 hFE -- IC Base-to-Emitter Voltage, VBE -- V VCE(sat) -- IC VCE= --2V DC Current Gain, hFE 3 2 Ta=75C 25C --25C Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 7 5 3 2 IC / IB=20 100 7 5 3 2 --100 7 5 3 2 5C Ta=7 C 25C --25 10 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 Collector Current, IC -- mA 5 7--1000 IT04098 --10 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 Collector Current, IC -- mA No.7512-2/4 30A01SP 3 VBE(sat) -- IC IC / IB=20 Gain-Bandwidth Product, f T -- MHz 1000 7 5 fT -- IC VCE= --10V Base-to-Emitter Saturation Voltage, VBE(sat) -- mV 2 3 --1000 Ta= --25C 7 2 75C 5 25C 100 7 5 --1.0 3 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 Collector Current, IC -- mA 10 5 7--1000 IT04100 2 3 5 7 --10 2 3 5 7 --100 2 3 Cob -- VCB Collector Current, IC -- mA 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 5 7--1000 IT04101 Ron -- IB IN f=1MHz f=1MHz 1k 1k IB OUT Output Capacitance, Cob -- pF 7 5 3 2 ON Resistance, Ron -- 1.0 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Collector-to-Base Voltage, VCB -- V 500 5 7 --100 IT04102 0.1 --0.1 2 3 5 7 --1.0 2 3 5 PC -- Ta Base Current, IB -- mA 7 --10 IT06066 Collector Dissipation, PC -- mW 400 300 200 100 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT05521 No.7512-3/4 30A01SP Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2003. Specifications and information herein are subject to change without notice. PS No.7512-4/4 This datasheet has been download from: www..com Datasheets for electronics components. |
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