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| CTA2P1N COMPLEX TRANSISTOR ARRAY Features NEW PRODUCT * * * Combines MMBT4403 type transistor with 2N7002 type MOSFET Small Surface Mount Package NPN/P-Channel Complement Available: CTA2N1P A SOT-363 Dim A B Min 0.10 1.15 2.00 0.30 1.80 3/4 0.90 0.25 0.10 Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 Mechanical Data * * * * * Case: SOT-363, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Case material - UL Flammability Rating Classification 94V-0 Terminal Connections: See Diagram Marking: A80 Weight: 0.006 grams (approx.) CQ1 GQ2 SQ2 A80 H K BC C D F H J M 0.65 Nominal K L M J D F L All Dimensions in mm Q1 Q2 EQ1 BQ1 DQ2 Maximum Ratings, Total Device @ TA = 25C unless otherwise specified Characteristic Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Symbol Pd RqJA Tj, TSTG Value 150 833 -55 to +150 Unit mW C/W C Maximum Ratings, Q1, MMBT4403 PNP Transistor Element Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Symbol VCBO VCEO VEBO IC @ TA = 25C unless otherwise specified Value -40 -40 -5.0 -600 Unit V V V mA Maximum Ratings, Q2, 2N7002 N-Channel MOSFET Element Characteristic Drain-Source Voltage Drain-Gate Voltage RGS 1.0MW Gate-Source Voltage Drain Current (Note 1) Continuous Pulsed Continuous Continuous @ 100C Pulsed Symbol VDSS VDGR VGSS ID @ TA = 25C unless otherwise specified Value 60 60 20 40 115 73 800 Units V V V mA DS30296 Rev. 2 - 2 1 of 4 CTA2P1N Electrical Characteristics, Q1, MMBT4403 PNP Transistor Element @ TA = 25C unless otherwise specified NEW PRODUCT Characteristic OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 2) Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL Min -40 -40 -5.0 3/4 3/4 30 60 100 100 20 3/4 -0.75 3/4 3/4 3/4 1.5 0.1 60 1.0 200 Max 3/4 3/4 3/4 -100 -100 3/4 3/4 3/4 300 3/4 -0.40 -0.75 -0.95 -1.30 8.5 30 15 8.0 500 100 3/4 Unit V V V nA nA Test Condition IC = -100mA, IE = 0 IC = -1.0mA, IB = 0 IE = -100mA, IC = 0 VCE = -35V, VEB(OFF) = -0.4V VCE = -35V, VEB(OFF) = -0.4V IC = -100A, VCE = IC = -1.0mA, VCE = IC = -10mA, VCE = IC = -150mA, VCE = IC = -500mA, VCE = -1.0V -1.0V -1.0V -2.0V -2.0V DC Current Gain hFE 3/4 Collector-Emitter Saturation Voltage Base- Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time VCE(SAT) VBE(SAT) V V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA VCB = -10V, f = 1.0MHz, IE = 0 VEB = -0.5V, f = 1.0MHz, IC = 0 Ccb Ceb hie hre hfe hoe fT pF pF kW x 10-4 3/4 mS MHz VCE = -10V, IC = -1.0mA, f = 1.0kHz VCE = -10V, IC = -20mA, f = 100MHz td tr ts tf 3/4 3/4 3/4 3/4 15 20 225 30 ns ns ns ns VCC = -30V, IC = -150mA, VBE(off) = -2.0V, IB1 = -15mA VCC = -30V, IC = -150mA, IB1 = IB2 = -15mA Electrical Characteristics, Q2, 2N7002 N-Channel MOSFET Element @ TA = 25C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 2) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time tD(ON) tD(OFF) 3/4 3/4 7.0 11 20 20 ns ns VDD = 30V, ID = 0.2A, RL = 150W, VGEN = 10V, RGEN = 25W Ciss Coss Crss 3/4 3/4 3/4 22 11 2.0 50 25 5.0 pF pF pF VDS = 25V, VGS = 0V f = 1.0MHz VGS(th) @ Tj = 25C @ Tj = 125C RDS (ON) ID(ON) gFS 1.0 3/4 0.5 80 3/4 3.2 4.4 1.0 3/4 2.0 7.5 13.5 3/4 3/4 V W A mS VDS = VGS, ID =-250mA VGS = 5.0V, ID = 0.05A VGS = 10V, ID = 0.5A VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A @ TC = 25C @ TC = 125C BVDSS IDSS IGSS 60 3/4 3/4 70 3/4 3/4 3/4 1.0 500 10 V A nA VGS = 0V, ID = 10mA VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V Symbol Min Typ Max Unit Test Condition Note: 1. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30296 Rev. 2 - 2 2 of 4 CTA2P1N Ordering Information (Note 3) NEW PRODUCT Device CTA2P1N-7 Notes: Packaging SOT-363 Shipping 3000/Tape & Reel 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information A80 Date Code Key Year Code Month Code 1998 J Jan 1 Feb 2 30 20 Cibo 1999 K March 3 2000 L Apr 4 May 5 YM 2001 M Jun 6 Jul 7 2002 N Aug 8 2003 O Sep 9 Oct O 2004 P Nov N Dec D CAPACITANCE (pF) 10 5.0 Cobo 1.0 -0.1 -1.0 -10 -30 REVERSE VOLTS (V) Fig. 1 Typical Capacitance (MMBT4403) VCE COLLECTOR-EMITTER VOLTAGE (V) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 1 IC = 1mA IC = 30mA IC = 10mA IC = 100mA IC = 300mA 0.01 0.1 10 100 IB BASE CURRENT (mA) Fig. 2 Typical Collector Saturation Region (MMBT4403) DS30296 Rev. 2 - 2 3 of 4 CTA2P1N 1.0 NEW PRODUCT DRAIN-SOURCE ON-RESISTANCE (W) 0.8 ID, DRAIN-SOURCE CURRENT (A) RDS(ON), NORMALIZED 0.6 VGS = 10V 9.0V 8.0V 7.0V 6.5V 6.0V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0/1.0V 7 Tj = 25C 6 5 VGS = 5.0V 5.5V 4 3 2 1 0 5.0V 0.4 VGS = 10V 0.2 0 0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1.0 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 3 On-Region Characteristics (2N7002) ID, DRAIN CURRENT (A) Fig. 4 On-Resistance vs Drain Current (2N7002) 6 3.0 DRAIN-SOURCE ON-RESISTANCE (W) DRAIN-SOURCE ON-RESISTANCE (W) 5 2.5 RDS(ON), NORMALIZED RDS(ON), STATIC 4 ID = 50mA ID = 500mA 2.0 3 2 1.5 VGS = 10V, ID = 200mA 1 0 1.0 -55 -30 -5 20 45 70 95 120 145 0 2 4 6 8 10 12 14 16 18 Tj, JUNCTION TEMPERATURE (C) Fig. 5 On-Resistance vs Junction Temperature (2N7002) VGS, GATE TO SOURCE VOLTAGE (V) Fig. 6 On-Resistance vs. Gate-Source Voltage (2N7002) 10 VGS, GATE SOURCE CURRENT (V) 9 8 7 6 5 4 3 2 1 0 0 VDS = 10V TA = +125C TA = +75C TA = -55C TA = +25C 0.2 0.4 0.6 0.8 1 ID, DRAIN CURRENT (A) Fig. 7 Typical Transfer Characteristics (2N7002) DS30296 Rev. 2 - 2 4 of 4 CTA2P1N |
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