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| GP250MHB06S GP250MHB06S Half Bridge IGBT Module Replaces January 2000 version, DS4325 - 5.0 DS4325-6.0 October 2001 FEATURES s s s s KEY PARAMETERS VCES VCE(sat) IC25 IC75 IC(PK) (typ) 600V 2.2V (max) 350A (max) 250A (max) 700A n - Channel High Switching Speed Low Forward Voltage Drop Isolated Base APPLICATIONS s s PWM Motor Control UPS 11(C2) 1(E1C2) 2(E2) 6(G2) 7(E2) 3(C1) 5(E1) 4(G1) The Powerline range of modules includes half bridge, chopper, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The GP250MHB06S is a half bridge 600V n channel enhancement mode insulated gate bipolar transistor (IGBT) module. The module is suitable for a variety of medium voltage applications in motor drives and power conversion. The IGBT has a wide reverse bias safe operating area (RBSOA) for ultimate reliability in demanding applications. These modules incorporate electrically isolated base plates and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety. Typical applications include dc motor drives, ac pwm drivesand ups systems. 9(C1) Fig. 1 Half bridge circuit diagram 11 10 1 2 3 6 7 5 4 ORDERING INFORMATION Order as: GP250MHB06S Note: When ordering, use complete part number. 8 9 Outline type code: M (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/10 www.dynexsemi.com GP250MHB06S ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25C unless stated otherwise Symbol VCES VGES IC Parameter Collector-emitter voltage Gate-emitter voltage Collector current DC, Tcase = 25C DC, Tcase = 75C IC(PK) 1ms, Tcase = 25C 1ms, Tcase = 75C Pmax Visol Maximum power dissipation Isolation voltage (Transistor) Commoned terminals to base plate. AC RMS, 1 min, 50Hz VGE = 0V Test Conditions Max. 600 20 350 250 700 500 1250 2500 Units V V A A A A W V THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Rth(j-c) Rth(c-h) Tj Parameter Thermal resistance - transistor Thermal resistance - diode Conditions DC junction to case per arm DC junction to case Min. Mounting - M6 Electrical connections - M6 - 40 Max. 100 250 15 150 125 125 5 5 Units o C/kW C/kW o Thermal resistance - Case to heatsink (per module) Mounting torque 5Nm (with mounting grease) Junction temperature Transistor Diode o C/kW o C C o Tstg - Storage temperature range Screw torque o C Nm Nm 2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP250MHB06S ELECTRICAL CHARACTERISTICS Tj = 25C unless stated otherwise. Symbol ICES Parameter Collector cut-off current Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tj = 125C IGES VGE(TH) Gate leakage current Gate threshold voltage VGE = 20V, VCE = 0V IC = 10mA, VGE = VCE VGE = 15V, IC = 250A VGE = 15V, IC = 250A, Tj = 125C IF IFM VF Diode forward current Diode maximum forward current Diode forward voltage DC tp = 1ms IF = 250A, IF = 250A, Tj = 125C Cies Input capacitance VCE = 25V, VGE = 0V, f = 1MHz Min. 4 Typ. 2.2 2.3 1.1 1.05 27000 Max. 15 50 1 7.5 2.7 2.8 250 500 1.9 1.8 Units mA mA A V V V A A V V pF VCE(SAT) Collector-emitter saturation voltage Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/10 www.dynexsemi.com GP250MHB06S INDUCTIVE SWITCHING CHARACTERISTICS Tj = 25C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON trr Qrr Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery time Diode reverse recovery charge IF = 250A VR = 50%VCES, dIF/dt = 1500A/s IC = 250A VGE = 15V VCE = 50% VCES RG(ON) = RG(OFF) = 5 L ~ 100nH 330 130 12 165 15 ns ns mJ ns C Conditions Min. Typ. 810 310 20 Max. Units ns ns mJ Tj = 125C unless stated otherwise. td(off) tf EOFF td(on) tr EON trr Qrr Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery time Diode reverse recovery charge IF = 250A VR = 50%VCES, dIF/dt = 1500A/s IC = 250A VGE = 15V VCE = 50% VCES RG(ON) = RG(OFF) = 5 L ~ 200nH 380 160 18 230 23 ns ns mJ ns C 1050 450 30 ns ns mJ 4/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP250MHB06S TYPICAL CHARACTERISTICS 500 Common emitter 450 Tcase = 25C 400 Collector current, Ic - (A) Collector current, Ic - (A) Vge = 20/15V 500 Vge = 12V Vge = 20/15V Common emitter 450 Tcase = 125C 400 350 300 250 200 Vge = 12V 350 300 250 200 Vge = 10V 150 100 50 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Collector-emitter voltage, Vce - (V) Fig.3 Typical output characteristics Vge = 10V 150 100 50 5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Collector-emitter voltage, Vce - (V) Fig.4 Typical output characteristics 5 30.0 Tj = 25C 27.5 VGE = 15V 25.0 VCE = 300V Turn-on energy, EON - (mJ) 30.0 Tj = 125C 27.5 VGE = 15V 25.0 VCE = 300V Turn-on energy, EON - (mJ) A B C A 22.5 20.0 17.5 15.0 12.5 10.0 7.5 5.0 2.5 0 0 50 100 150 200 Collector current, IC - (A) A: Rg = 15 B: Rg = 10 C: Rg = 5 250 300 C B 22.5 20.0 17.5 15.0 12.5 10.0 7.5 5.0 2.5 0 0 50 100 150 200 Collector current, IC - (A) A: Rg = 15 B: Rg = 10 C: Rg = 5 250 300 Fig.5 Typical turn-on energy vs collector current Fig.6 Typical turn-on energy vs collector current Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 5/10 www.dynexsemi.com GP250MHB06S 40 Tj = 25C VGE = 15V 35 V = 300V CE Turn-off energy, EOFF - (mJ) Turn-off energy, EOFF - (mJ) 30 25 20 15 10 5 0 0 A: Rg = 15 B: Rg = 10 C: Rg = 5 50 200 100 150 Collector current, IC - (A) 250 300 A B C 40 35 30 25 20 15 10 5 0 0 A: Rg = 15 B: Rg = 10 C: Rg = 5 50 100 150 200 Collector current, IC - (A) 250 300 Tj = 125C VGE = 15V VCE = 300V A B C Fig.7 Typical turn-off energy vs collector current Fig.8 Typical turn-off energy vs collector current 5 Tj = 25C VGE = 15V VCE = 300V 4 5 Tj = 125C VGE = 15V VCE = 300V 4 Rg = 5 Diode turn-off energy, EOFF(diode) - (mJ) Diode turn-off energy, EOFF(diode) - (mJ) Rg = 5 3 Rg = 10 2 Rg = 15 1 3 Rg = 10 2 Rg = 15 1 0 0 50 100 150 200 Collector current, IC - (A) 250 300 0 0 50 100 150 200 Collector current, IC - (A) 250 300 Fig.9 Typical diode turn-off energy vs collector current Fig.10 Typical diode turn-off energy vs collector current 6/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP250MHB06S 1400 1200 1000 250 td(off) Tj = 125C VGE = 15V VCE = 300V Rg = 5 225 200 Foward current, IF - (A) Switching times, - (ns) 175 150 125 100 75 50 Tj = 125C 800 600 tf td(on) 400 200 tr 0 0 50 100 150 200 Collector current, IC - (A) 250 300 Tj = 25C 25 0 0 0.25 1.00 0.50 0.75 Foward voltage, VF - (V) 1.25 Fig.11 Typical switching characteristics Fig.12 Diode typical forward characteristics 600 10000 500 Collector current, IC - (A) Collector current, IC - (A) 1000 IC max. (single pulse) 50s 100s 400 300 100 IC m ax tp = 1ms .D C (c on tin 200 uo us 10 ) 100 Tj = 125C Vge = 15V Rg = 5 600 200 400 Collector-emitter voltage, Vce - (V) Fig.13 Reverse bias safe operating area 800 0 0 1 1 10 100 Collector-emitter voltage, Vce - (V) 1000 Fig.14 Forward bias safe operating area (DC and single pulse) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 7/10 www.dynexsemi.com GP250MHB06S 1000 Transient thermal impedance, Zth (j-c) - (C/kW ) Diode Transistor 100 10 1 0.001 0.01 0.1 Pulse width, tp - (s) 1 10 Fig.15 Transient thermal impedance 8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP250MHB06S PACKAGE DETAILS For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 28 0.5 28 0.5 11 6 62 0.8 48 0.3 10 1 2 3 7 4x Fast on tabs 8 9 5 4 93 0.3 3x M6 8 38max 23 106 0.8 108 0.8 Nominal weight: 270g Recommeded fixings for mounting: M6 Recommended mounting torque: 5Nm (44lbs.ins) Recommended torque for electrical connections (M6): 5Nm (44lbs.ins) Module outline type code: M Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 9/10 www.dynexsemi.com GP250MHB06S POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2001 Publication No. DS4325-6 Issue No. 6.0 October 2001 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 10/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com |
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