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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HD200206 Issued Date : 2002.05.01 Revised Date : 2005.08.16 Page No. : 1/4
HLB122D
NPN Triple Diffused Planar Type High Voltage Transistor
Description
The HLB122D is a medium power transistor designed for use in switching applications.
Features
* High breakdown voltage * Low collector saturation voltage * Fast switching speed
TO-126ML
Absolute Maximum Ratings (TA=25C)
* Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 C Junction Temperature .................................................................................................................................... +150 C * Maximum Power Dissipation Total Power Dissipation (TC=25C) .................................................................................................................... 10 W * Maximum Voltages and Currents BVCBO Collector to Base Voltage....................................................................................................................... 600 V BVCEO Collector to Emitter Voltage.................................................................................................................... 400 V BVEBO Emitter to Base Voltage.............................................................................................................................. 6 V IC Collector Current (DC) ............................................................................................................................... 800 mA IC Collector Current (Pulse).......................................................................................................................... 1600 mA IB Base Current (DC)...................................................................................................................................... 100 mA IB Base Current (Pulse).................................................................................................................................. 200 mA
Electrical Characteristics (TA=25C)
Symbol BVCBO BVCEO BVEBO ICBO ICEO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat) *hFE1 *hFE2 tf Min. 600 400 6 10 10 Typ. Max. 10 10 10 400 800 1 40 0.6 uS Unit V V V uA uA uA mV mV V IC=100uA IC=10mA IE=10uA VCB=600V VCE=400V VEB=6V IC=100mA, IB=20mA IC=300mA, IB=60mA IC=100mA, IB=20mA VCE=10V, IC=0.1A VCE=10V, IC=0.5A VCC=100V, IC=0.3A, IB1=-IB2=0.06A
*Pulse Test: Pulse Width 380us, Duty Cycle2%
Test Conditions
Classification of hFE1
Rank Range
HLB122D
B1 10-17
B2 13-22
B3 18-27
B4 23-32
B5 28-37
B6 33-40
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
100
Spec. No. : HD200206 Issued Date : 2002.05.01 Revised Date : 2005.08.16 Page No. : 2/4
Saturation Voltage & Collector Current
10000 VCE(sat) @ IC=5IB
125 C
o
Saturation Voltage (mV)
25 C
o
1000
o
hFE
75 C 10
o
75 C
hFE @ VCE=10V
100
125 C
o
25 C
o
1 1 10 100 1000
10 1 10 100 1000
Collector Current-IC (mA)
Collector Current-IC (mA)
Saturation Voltage & Collector Current
1000 25 C
o
Saturation Voltage (mV)
75 C 125 C
o
o
VBE(sat) @ IC=5IB
100 1 10 100 1000
Collector Current-IC (mA)
HLB122D
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-126ML Dimension
A C D E
H LB 1 2 2D
Spec. No. : HD200206 Issued Date : 2002.05.01 Revised Date : 2005.08.16 Page No. : 3/4
Marking:
L
Pb Free Mark
Pb-Free: " . " (Note) Normal: None
I
B 1 F H G M 2 3
Date Code Control Code
Note: Green label is used for pb-free packing Pin Style: 1.Emitter 2.Collector 3.Base Material: * Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
DIM A B C D E F G H I J K L M N
Min. 7.74 10.87 0.88 1.28 3.50 2.61 13 1.18 2.88 0.68 3.44 1.88 0.50
Max. 8.24 11.37 1.12 1.52 3.75 3.37 1.42 3.12 0.84 2.30 3.70 2.14 0.51
*: Typical, Unit: mm
K J N
3-Lead TO-126ML Plastic Package HSMC Package Code: D
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
* Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
HLB122D
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC's Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile
tP TP Ramp-up TL Tsmax Temperature tL
Spec. No. : HD200206 Issued Date : 2002.05.01 Revised Date : 2005.08.16 Page No. : 4/4
Critical Zone TL to TP
Tsmin tS Preheat
Ramp-down
25 t 25oC to Peak Time
Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices.
Sn-Pb Eutectic Assembly <3 C/sec 100oC 150oC 60~120 sec <3oC/sec 183oC 60~150 sec 240 C +0/-5 C 10~30 sec <6oC/sec <6 minutes
o o o
Pb-Free Assembly <3oC/sec 150oC 200oC 60~180 sec <3oC/sec 217oC 60~150 sec 260oC +0/-5oC 20~40 sec <6oC/sec <8 minutes
Peak temperature 245 C 5 C
o o
Dipping time 5sec 1sec 5sec 1sec
260 C +0/-5 C
o
o
HLB122D
HSMC Product Specification

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