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| PD - 94643 HEXFET(R) POWER MOSFET SURFACE MOUNT (SMD-1) IRF7N1405 55V, N-CHANNEL Product Summary Part Number IRF7N1405 BVDSS 55V RDS(on) ID 0.0053 55A* Seventh Generation HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. SMD-1 Features: n n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Surface Mount Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25C ID @ VGS = 10V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Package Mounting Surface Temp. Weight * Current is limited by package For footnotes refer to the last page 55* 55* 220 100 0.8 20 245 55 10 1.8 -55 to 150 300 (for 5s) 2.6 (Typical) Units A W W/C V mJ A mJ V/ns o C g www.irf.com 1 04/14/03 IRF7N1405 Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage BV DSS/T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 55 -- -- 2.0 68 -- -- -- -- -- -- -- -- -- -- -- -- Typ Max Units -- 0.061 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4.0 -- -- 0.0053 4.0 -- 25 250 200 -200 200 40 80 20 90 200 150 -- V V/C V S( ) A Test Conditions VGS = 0V, ID = 250A Reference to 25C, ID = 1.0mA VGS = 10V, ID = 55A VDS = VGS, ID = 250A VDS =25V, IDS = 55A VDS = 55V ,VGS=0V VDS = 44V, VGS = 0V, TJ =125C VGS = 20V VGS = -20V VGS =10V, ID = 55A VDS = 44V VDD = 28V, ID = 55A, VGS = 10V, RG = 2.4 IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD l Ciss C oss C rss Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from the center of drain pad to the center of source pad VGS = 0V, VDS = 25V f = 1.0MHz Input Capacitance Output Capacitance Reverse Transfer Capacitance -- -- -- 5100 1290 300 -- -- -- pF Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD trr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units -- -- -- -- -- -- -- -- -- -- 55* 220 1.3 130 380 Test Conditions A V ns nC Tj = 25C, IS = 55A, VGS = 0V Tj = 25C, IF = 55A, di/dt 100A/s VDD 25V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max -- -- 1.25 Units C/W Test Conditions Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com IRF7N1405 1000 TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 1000 ID, Drain-to-Source Current (A) BOTTOM 100 ID, Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 4.5V 4.5V 20s PULSE WIDTH Tj = 25C 10 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) 20s PULSE WIDTH Tj = 150C 10 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 R DS(on) , Drain-to-Source On Resistance (Normalized) I D = 55A ID , Drain-to-Source Current ( ) 2.0 100 T J = 150C 1.5 T J = 25C 1.0 0.5 10 4 4.5 5 VDS = 25V 15 20s PULSE WIDTH 5.5 6 6.5 7 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7N1405 9000 7500 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 12 ID= 55A VDS= 44V VDS= 28V VDS= 11V C, Capacitance (pF) 6000 Ciss 8 4500 3000 C oss C rss 1 10 100 4 1500 FOR TEST CIRCUIT SEE FIGURE 13 0 0 20 40 60 80 100 120 140 0 VDS , Drain-to-Source Voltage (V) Q G Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current ( ) OPERATION IN THIS AREA LIMITED BY R DS(on) 100 T J = 150C 10 T J = 25C ID, Drain-to-Source Current (A) 100 100s 1ms 10 Tc = 25C Tj = 150C Single Pulse 0.1 1 10 1 VGS = 0V 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10ms 0.1 1 100 1000 VSD , Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7N1405 120 LIMITED BY PACKAGE 100 V DS VGS RG RD D.U.T. + I D , Drain Current (A) -V DD 80 VGS 60 Pulse Width 1 s Duty Factor 0.1 % 40 Fig 10a. Switching Time Test Circuit 20 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1 0.001 0.01 1 P DM t1 t2 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF7N1405 500 EAS , Single Pulse Avalanche Energy (mJ) 1 5V 400 ID 24.6A 34.8A BOTTOM 55A TOP VDS L D R IV E R 300 RG 2VV 0 GS tp D .U .T. IA S + V - DD A 200 0 .0 1 100 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K 12V .2F .3F QG 10V QGS VG QGD VGS 3mA D.U.T. + V - DS IG ID Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRF7N1405 Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = 25 V, Starting TJ = 25C, L= 0.16mH Peak IAS = 55A, VGS = 10V, RG= 25 ISD 55A, di/dt 220A/s, Pulse width 300 s; Duty Cycle 2% VDD 55V, TJ 150C Case Outline and Dimensions -- SMD-1 PAD ASSIGNMENTS IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 04/03 www.irf.com 7 |
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