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| MITSUBISHI SEMICONDUCTOR MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES * High output power Po=23dBm(TYP.) @f=1.9GHz,Pin=5dBm * High power gain Gp=19dB(TYP.) @f=1.9GHz * High power added efficiency add=30%(TYP.) @f=1.9GHz,Pin=5dBm * Hermetic Package APPLICATION * For UHF Band power amplifiers Fig.1 QUALITY * GG RECOMMENDED BIAS CONDITIONS * Vds=6V * Ids=100mA * Rg=1k Delivery -01:Tape & Reel(1K), -03:Trai(50pcs) (Ta=25C) Absolute maximum ratings Symbol VGSO VGDO ID IGR IGF PT Tch Tstg Parameter Gate to sourcebreakdown voltage Gate to drain breakdown voltage Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature Ratings -8 -8 250 -0.6 1.5 1.5 175 -65 to +175 (Ta=25C) Unit V V mA mA mA W C C Electrical characteristics Symbol IDSS VGS(off) gm Po add GLP NF Rth(ch-c) Parameter Saturated drain current Gate to source cut-off voltage Transconductance Output power Power added Efficiency Linear Power Gain Noise figure Thermal Resistance *1 Test conditions Min. VDS=3V,VGS=0V VDS=3V,ID=0.1mA VDS=3V,ID=100mA VDS=6V,ID=100m A,f=1.9GHz Pin=5dBm VDS=6V,ID=100mA,f=1.9GHz Vf Method 150 -1.5 - Limits Typ. 200 90 23 30 19 1.0 70 Max. 250 -4.5 100 Unit mA V mS dBm % dB dB C/W *1:Channel to case / Above parameters, ratings, limits are subject to change. Mitsubishi Electric June/2004 MGF0916A TYPICAL CHARACTERISTICS Po,Gp,PAE vs.Pin 26 24 22 20 Po(dBm) 18 16 14 12 10 8 6 -15 -10 -5 0 Pin(dBm) 5 10 15 Gp 50 VDS=6V ID=0.1A f=1.9GHz Po 45 40 PAE Gp(dB),PAE(%) 35 30 25 20 15 10 5 0 IM3,Po(SCL) vs. Pi(SCL) 30 20 Po(SCL) (dBm) 10 0 10 VD=6V ID=100mA f1=1.90GHz f2=1.91GHz Po 0 -10 -20 IM3 (dBc) IM3 -30 -40 -50 -60 -25 -20 -15 -10 -5 0 5 10 Pi(SCL) (dBm) -10 -20 -30 -40 Mitsubishi Electric June/2004 MGF0916A freq. (MHz) 600 1000 1400 1800 2200 2600 3000 3400 3800 4200 4600 5000 5400 5800 6200 6600 7000 7400 7800 8200 8600 9000 9400 9800 10200 10600 11000 11400 11800 12200 S PARAMETERS S11 (Ta=25C, VDS=6V, ID=100mA, Reference Plane see Fig.1) S21 S12 (mag) 0.016 0.023 0.027 0.029 0.030 0.030 0.030 0.029 0.029 0.028 0.028 0.028 0.029 0.030 0.031 0.033 0.036 0.038 0.041 0.044 0.047 0.050 0.054 0.057 0.061 0.065 0.070 0.075 0.081 0.088 (ang) 60.06 45.59 32.76 21.52 11.83 3.59 -3.30 -8.97 -13.57 -17.24 -20.15 -22.48 -24.39 -26.06 -27.67 -29.37 -31.33 -33.68 -36.55 -40.05 -44.27 -49.26 -55.06 -61.67 -69.05 -77.14 -85.81 -94.92 -104.26 -113.56 2.0 S22 (mag) 0.477 0.509 0.543 0.578 0.613 0.646 0.679 0.708 0.736 0.760 0.782 0.801 0.817 0.831 0.843 0.853 0.861 0.868 0.874 0.879 0.883 0.886 0.888 0.888 0.886 0.880 0.871 0.857 0.836 0.806 (ang) -37.47 -57.48 -73.42 -86.07 -96.10 -104.09 -110.51 -115.77 -120.19 -124.02 -127.46 -130.64 -133.65 -136.55 -139.35 -142.06 -144.65 -147.09 -149.36 -151.43 -153.28 -154.93 -156.42 -157.81 -159.22 -160.83 -162.85 -165.57 -169.37 -174.68 K 0.25 0.32 0.37 0.44 0.51 0.60 0.72 0.84 0.93 1.05 1.09 1.16 1.17 1.19 1.22 1.23 1.19 1.21 1.21 1.23 1.27 1.33 1.36 1.40 1.40 1.39 1.36 1.35 1.36 1.42 MAG/MSG (mag) 0.954 0.915 0.887 0.866 0.852 0.844 0.829 0.822 0.813 0.806 0.802 0.792 0.779 0.763 0.741 0.714 0.688 0.660 0.628 0.590 0.540 0.477 0.400 0.311 0.217 0.126 0.073 0.113 0.188 0.260 (ang) -40.32 -62.48 -80.56 -95.15 -106.84 -116.18 -123.68 -129.83 -135.06 -139.74 -144.18 -148.63 -153.25 -158.12 -163.24 -168.50 -173.69 -178.49 176.97 172.29 167.52 162.13 155.63 146.74 133.83 110.51 51.97 -5.75 -27.30 -36.27 (mag) 7.263 6.256 5.395 4.664 4.047 3.529 3.099 2.743 2.452 2.215 2.025 1.874 1.755 1.661 1.589 1.533 1.490 1.457 1.430 1.409 1.391 1.374 1.358 1.342 1.325 1.306 1.286 1.262 1.236 1.206 (ang) 145.11 126.36 110.17 96.15 83.93 73.20 63.67 55.09 47.23 39.92 32.99 26.30 19.72 13.18 6.57 -0.16 -7.07 -14.20 -21.60 -29.29 -37.32 -45.70 -54.48 -63.70 -73.41 -83.66 -94.52 -106.08 -118.45 -131.74 (dB) 26.57 24.35 23.01 22.06 21.30 20.71 20.14 19.76 19.27 17.60 16.73 15.86 15.29 14.78 14.24 13.79 13.50 13.08 12.67 12.17 11.56 10.94 10.41 9.95 9.62 9.31 9.08 8.73 8.26 7.52 Gate Mark Round corner (1) 0.80 0.8 Gate Mark (1) Reference Plane 4.20 (3) Reference Plane (2) 4.00 (2) 0.6 0.25 2.5 (1) Gate (2) Drain (3) Source 0.3 BACK SIDE PATTERN (Unit:mm) Fig.1 OUTLINE DRAWING Mitsubishi Electric June/2004 1.20 2.8 MITSUBISHI SEMICONDUCTOR MGF0916A L & S BAND GaAs FET [ SMD non - matched ] Requests Regarding Safety Designs Mitsubishi Electric constantly strives to raise the level of its quality and reliability. Despite these concerted efforts, however, there will be occasions when our semiconductor products suffer breakdowns, malfunctions or other problems. In view of this reality, it is requested that every feasible precaution be taken in the pursuit of redundancy design, malfunction prevention design and other safety-related designs, to prevent breakdowns or malfunctions in our products from resulting in accidents involving people, fires, social losses or other problems, thereby upholding the highest levels of safety in the products when in use by customers. Matters of Importance when Using these Materials 1. These materials are designed as reference materials to ensure that all customers purchase Mitsubishi Electric semiconductors best suited to their specific use applications. Please be aware, however, that the technical information contained in these materials does not comprise consent for the execution or use of intellectual property rights or other rights owned by Mitsubishi Electric Corporation. 2. Mitsubishi Electric does not assume responsibility for damages resulting from the use of product data, graphs, charts, programs, algorithms or other applied circuit examples described in these materials, or for the infringement of the rights of third-party owners resulting from such use. 3. The data, graphs, charts, programs, algorithms and all other information described in these materials were current at the issue of these materials, with Mitsubishi Electric reserving the right to make any necessary updates or changes in the products or specifications in these materials without prior notice. Before purchasing Mitsubishi Electric semiconductor products, therefore, please obtain the latest available information from Mitsubishi Electric directly or an authorized dealer. 4. Every possible effort has been made to ensure that the information described in these materials is fully accurate. However, Mitsubishi Electric assumes no responsibility for damages resulting from inaccuracies occurring within these materials. 5. When using the product data, technical contents indicated on the graphs, charts, programs or algorithms described in these materials, assessments should not be limited to only the technical contents, programs and algorithm units. Rather, it is requested that ample evaluations be made of each individual system as a whole, with the customer assuming full responsibility for decisions on the propriety of application. Mitsubishi Electric does not accept responsibility for the propriety of application. 6. The products described in these materials, with the exception of special mention concerning use and reliability, have been designed and manufactured with the purpose of use in general electronic machinery. Accordingly these products have not been designed and manufactured with the purpose of application in machinery or systems that will be used under conditions that can affect human life, or in machinery or systems used in social infrastructure that demand a particularly high degree of reliability. When considering the use of the products described in these materials in transportation machinery (automobiles, trains, vessels), for objectives related to medical treatment, aerospace, nuclear power control, submarine repeaters or systems or other specialized applications, please consult with Mitsubishi Electric directly or an authorized dealer. 7. When considering use of products for purposes other than the specific applications described in these materials, please inquire at Mitsubishi Electric or an authorized dealer. 8. The prior consent of Mitsubishi Electric in writing is required for any reprinting or reproduction of these materials. 9. Please direct any inquiries regarding further details of these materials, or any other comments or matters of attention, to Mitsubishi Electric or an authorized dealer. Mitsubishi Electric June/2004 |
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