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AP9926EM-A Advanced Power Electronics Corp. Low on-resistance Capable of 2.5V gate drive D1 D2 D1 D2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID G2 S2 16V 27m 7A Surface mount package SO-8 S1 G1 Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D1 G1 G2 D2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 16 12 7 5.6 20 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit /W Data and specifications subject to change without notice 201112041 AP9926EM-A Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA Min. Typ. Max. Units 16 0.01 13 14 1.4 7 10 13 26 8 420 280 120 3 27 40 1.2 1 25 10 22 670 V V/ m m V S uA uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) VGS=4.5V, ID=6A VGS=2.5V, ID=5A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=250uA VDS=5V, ID=6A VDS=16V, VGS=0V VDS=12V ,VGS=0V VGS=12V ID=6A VDS=10V VGS=4.5V VDS=10V ID=1A RG=3.3,VGS=10V RD=10 VGS=0V VDS=16V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 Test Conditions IS=1.7A, VGS=0V Min. Typ. Max. Units 1.2 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 135 /W when mounted on Min. copper pad. AP9926EM-A 50 50 T A =25 C 40 o ID , Drain Current (A) 5.0V 4.5V 3.5V ID , Drain Current (A) T A = 150 o C 40 5.0V 4.5V 3.5V 30 30 2.5V 20 2.5V 20 10 10 V G =1.5V 0 0 1 2 3 4 0 0 1 2 3 V G =1.5V 4 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 50 1.6 ID=5A 40 1.4 Normalized R DS(ON) T A =25 C RDS(ON) (m ) o I D =6A V G = 4.5V 1.2 1.0 30 0.8 20 1 2 3 4 5 0.6 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Temperature 1.6 6 4 Normalized VGS(th) (V) 1.2 1.2 IS(A) T j =150 o C T j =25 o C 2 0.8 0 0 0.2 0.4 0.6 0.8 1 0.4 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9926EM-A 16 1000 f=1.0MHz VGS , Gate to Source Voltage (V) ID=6A 12 8 C (pF) V DS = 6 V V DS = 8 V V DS =1 0 V C iss C oss 4 C rss 0 100 0 5 10 15 20 25 30 35 1 4 7 10 13 16 19 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthja) Duty factor=0.5 0.2 10 1ms 10ms 0.1 0.1 0.05 1 ID (A) 100ms 1s 0.1 0.02 0.01 PDM 0.01 Single Pulse t T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135oC/W T A =25 C Single Pulse o 10s DC 0.01 0.1 1 10 100 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 20 V DS =5V ID , Drain Current (A) 15 VG QG T j =25 C 10 o T j =150 C o 4.5V QGS QGD 5 Charge 0 0 1 2 3 4 Q V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform |
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