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| APM4429K P-Channel Enhancement Mode MOSFET Features * -30V/-12A , RDS(ON)=9m (typ.) @ VGS=-20V RDS(ON)=10m (typ.) @ VGS=-10V RDS(ON)=12m (typ.) @ VGS=-4.5V Pin Description * * * * Super High Dense Cell Design Reliable and Rugged SOP-8 Package Lead Free Available (RoHS Compliant) Top View of SOP - 8 ( 1, 2, 3 ) SSS Applications (4) G * Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems D DDD (5,6,7,8) P-Channel MOSFET Ordering and Marking Information APM4429 Lead Free Code Handling Code Temp. Range Package Code Package Code K : SOP-8 Operating Junction Temp. Range C : -55 to 150 C Handling Code TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device XXXXX - Date Code APM4429 K : APM4429 XXXXX Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Sep., 2005 1 www.anpec.com.tw APM4429K Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM* I S* TJ TSTG PD* RJA* Note: *Surface Mounted on 1in pad area, t 10sec. 2 (TA = 25C unless otherwise noted) Rating -30 20 VGS=-20V -12 -50 -1.5 150 -55 to 150 TA=25C TA=100C 2 0.8 62.5 W C/W A C V A Unit Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Maximum Power Dissipation Thermal Resistance-Junction to Ambient Electrical Characteristics Symbol Parameter (TA = 25C unless otherwise noted) APM4429K Min. -30 -1 -30 -1 -1.5 9 10 12 -0.8 80 VDS=-15V, VGS=-10V, IDS=-12A 14 23 -2 100 12 13 16 -1.3 104 nC V m Typ. Max. Test Condition Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS VGS(th) IGSS RDS(ON) a VSD a VGS=0V, IDS=-250A VDS=-24V, VGS=0V TJ=85C VDS=VGS, IDS=-250A VGS=20V, VDS=0V VGS=-20V, IDS=-12A VGS=-10V, IDS=-12A VGS=-4.5V, IDS=-8A ISD=-3A, VGS=0V V A V nA Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage Gate Charge Characteristics b Qg Total Gate Charge Qgs Qgd Gate-Source Charge Gate-Drain Charge Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Sep., 2005 2 www.anpec.com.tw APM4429K Electrical Characteristics (Cont.) Symbol Parameter (T A = 25C unless otherwise noted) APM4429K Min. Typ. 4 2760 430 285 18 33 35 186 87 ns nC ns 19 103 48 26 10 pF Max. Test Condition Unit Dynamic Characteristics b RG Gate Resistance Ciss Coss Crss td(ON) Tr td(OFF) Tf trr Qrr Notes: VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=-25V, Frequency=1.0MHz VDD=-15V, RL=15, IDS=-1A, VGEN=-10V, RG=6 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Reverse Recovery Time Reverse Recovery Charge ISD=-12A, dISD/dt=100A/s a : Pulse test ; pulse width300s, duty cycle2%. b : Guaranteed by design, not subject to production testing. Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Sep., 2005 3 www.anpec.com.tw APM4429K Typical Characteristics Power Dissipation 2.5 14 12 2.0 Drain Current -ID - Drain Current (A) 10 8 6 4 2 Ptot - Power (W) 1.5 1.0 0.5 o o 0.0 TA=25 C 0 20 40 60 80 100 120 140 160 0 TA=25 C,VG=-20V 0 20 40 60 80 100 120 140 160 Tj - Junction Temperature (C) Tj - Junction Temperature (C) Safe Operation Area Normalized Transient Thermal Resistance 100 Thermal Transient Impedance 2 1 Duty = 0.5 0.2 0.1 -ID - Drain Current (A) Rd s(o n) Lim it 10 300us 1ms 10ms 0.1 0.02 0.01 0.05 1 100ms 1s 0.01 Single Pulse 2 0.1 DC T =25 C 0.01 A 0.01 0.1 o 1 10 100 1E-3 1E-4 Mounted on 1in pad o RJA : 62.5 C/W 1E-3 0.01 0.1 1 10 30 -VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Sep., 2005 4 www.anpec.com.tw APM4429K Typical Characteristics (Cont.) Output Characteristics 50 45 40 -3V VGS= -4,-5-6,-7,-8,-9,-10V 16 18 Drain-Source On Resistance RDS(ON) - On - Resistance (m) -ID - Drain Current (A) 35 30 25 20 15 10 5 -2V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -2.5V 14 VGS= -4.5V 12 10 8 6 4 VGS= -10V VGS= -20V 0 10 20 30 40 50 -VDS - Drain - Source Voltage (V) -ID - Drain Current (A) Transfer Characteristics 50 45 40 1.8 Gate Threshold Voltage IDS = -250A 1.6 Normalized Threshold Voltage 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 -ID - Drain Current (A) 35 30 25 20 15 10 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Tj=25 C o Tj=125 C Tj=-55 C o o 0 25 50 75 100 125 150 -VGS - Gate - Source Voltage (V) Tj - Junction Temperature (C) Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Sep., 2005 5 www.anpec.com.tw APM4429K Typical Characteristics (Cont.) Drain-Source On Resistance 2.0 VGS = -20V 1.8 IDS = -12A 10 Tj=150 C o Source-Drain Diode Forward 50 Normalized On Resistance 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 RON@Tj=25 C: 9m 0 25 50 75 100 125 150 o -IS - Source Current (A) Tj=25 C 1 o 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Tj - Junction Temperature (C) -VSD - Source - Drain Voltage (V) Capacitance 4000 3500 Frequency=1MHz 10 VDS= -15V 9 ID = -12A Gate Charge -VGS - Gate-source Voltage (V) 8 7 6 5 4 3 2 1 0 3000 C - Capacitance (pF) Ciss 2500 2000 1500 1000 500 0 Coss Crss 0 5 10 15 20 25 30 0 10 20 30 40 50 60 70 80 -VDS - Drain - Source Voltage (V) QG - Gate Charge (nC) Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Sep., 2005 6 www.anpec.com.tw APM4429K Packaging Information SOP-8 pin ( Reference JEDEC Registration MS-012) E H e1 D e2 A1 A 1 L 0.004max. Dim A A1 D E H L e1 e2 1 Millimeters Min. 1.35 0.10 4.80 3.80 5.80 0.40 0.33 1.27BSC 8 Max. 1.75 0.25 5.00 4.00 6.20 1.27 0.51 Min. 0.053 0.004 0.189 0.150 0.228 0.016 0.013 0.015X45 Inches Max. 0.069 0.010 0.197 0.157 0.244 0.050 0.020 0.50BSC 8 Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Sep., 2005 7 www.anpec.com.tw APM4429K Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) TP Ramp-up tp Critical Zone T L to T P Temperature TL Tsmax tL Tsmin Ramp-down ts Preheat 25 t 25 C to Peak Time Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (T L) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly 3C/second max. 100C 150C 60-120 seconds 183C 60-150 seconds See table 1 10-30 seconds Pb-Free Assembly 3C/second max. 150C 200C 60-180 seconds 217C 60-150 seconds See table 2 20-40 seconds 6C/second max. 6C/second max. 6 minutes max. 8 minutes max. Time 25C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. 8 www.anpec.com.tw Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Sep., 2005 APM4429K Classification Reflow Profiles(Cont.) Table 1. SnPb Entectic Process - Package Peak Reflow Temperature s 3 3 Package Thickness Volume mm Volume mm <350 350 <2.5 mm 240 +0/-5C 225 +0/-5C 2.5 mm 225 +0/-5C 225 +0/-5C Table 2. Pb-free Process - Package Classification Reflow Temperatures 3 3 3 Package Thickness Volume mm Volume mm Volume mm <350 350-2000 >2000 <1.6 mm 260 +0C* 260 +0C* 260 +0C* 1.6 mm - 2.5 mm 260 +0C* 250 +0C* 245 +0C* 2.5 mm 250 +0C* 245 +0C* 245 +0C* *Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0C. For example 260C+0C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D F W Bo Ao D1 Ko Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Sep., 2005 9 www.anpec.com.tw APM4429K Carrier Tape & Reel Dimensions(Cont.) T2 J C A B T1 Application A 3301 F 5.5 0.1 B 62 1.5 C 12.75 + 0.1 5 J 2 + 0.5 T1 12.4 +0.2 P1 2.0 0.1 T2 2 0.2 Ao 6.4 0.1 W 12 + 0.3 - 0.1 Bo 5.2 0.1 P 8 0.1 E 1.75 0.1 SOP-8 D D1 Po 1.550.1 1.55+ 0.25 4.0 0.1 Ko t 2.1 0.1 0.30.013 (mm) Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Sep., 2005 10 www.anpec.com.tw |
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