View AWT6168R_645843.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

AWT6168R
Quad-band GSM/GPRS/Polar EDGE Power Amplifier Module with Integrated Power Control
FEATURES
* * * * * * * * Internal Reference Voltage Integrated Power Control Scheme InGaP HBT Technology ESD Protection on All Pins (2.5 kV) Low profile 1.3 mm Small Package Outline 7 mm x 7 mm EGPRS Capable (class 12) RoHS Compliant Package, 250 oC MSL-3 PRELIMINARY DATA SHEET - REV 1.0
AW T
GMSK MODE * Integrated power control (CMOS) * +35.5 dBm GSM850/900 Output Power * +33.5 dBm DCS/PCS Output Power * 55 % GSM850/900 PAE * 53 % DCS/PCS PAE * Power control range > 50 dB EDGE MODE * +29 dBm GSM850/900 Output Power * +28.5 dBm DCS/PCS Output Power * 25 % GSM850/900 PAE * 30 % DCS/PCS PAE * 64 dB Typical ACPR (400 kHz) * 74 dB Typical ACPR (600 kHz)
616
8R
M11 Package 18 Pin 7 mm x 7 mm x 1.3 mm Surface Mount Module
APPLICATIONS * Dual/Tri/Quad Band Handsets and PDAs * Dual/Tri/Quad Band Wireless Data Cards PRODUCT DESCRIPTION
This power amplifier module supports dual, tri and quad band applications for GMSK and 8-PSK modulation schemes using an open loop polar architecture. There are two amplifier chains, one to support GSM850/900 bands, the other for DCS/PCS bands. Each amplification chain is optimized for excellent EDGE efficiency, power, and linearity in a Polar loop environment while maintaining high efficiency in the GSM/GPRS mode. The module includes an internal reference voltage and integrated power control scheme for use in both GMSK and 8-PSK operation. This facilitates fast and easy production calibration and reduces the number of external components required to complete a power control function. The amplifier's power control range is typically 55 dB, with the output power set by applying an analog voltage to VRAMP. All of the RF ports for this device are internally matched to 50.
DCS/PCS_IN
DCS/PCS
DCS/PCS_OUT
BS TX_EN VBATT CEXT VRAMP
Bias/Power Control
GSM850/900_IN
GSM850/900_OUT
GSM850/900
Figure 1: Block Diagram
01/2006
AWT6168R
GND
VCC2
DCS/PCS_IN BS TX_EN VBATT CEXT VRAMP GSM_IN
1 2 3 4 5 6 7
18
17
16 15 14 13 12 11
DCS/PCS_OUT GND GND VCC_OUT GND GND GSM_OUT
8
9
10
Figure 2: Pinout (X - ray Top View)
Table 1: Pin Description PIN 1 2 3 4 5 6 7 8 NAME DESCRIPTION PIN 10 11 12 13 14 15 16 17 NAME GSM_OUT GND GND VCC_OUT GND GND DESCRIPTION GSM850/900 RF Output Ground Ground Control Voltage Output which must be connected to VCC2, no decoupling Ground Ground
DCS/PCS_IN DCS/PCS RF Input BS TX_EN VBATT C EXT VRAMP GSM_IN VCC2 Band Select Logic Input TX Enable Logic Input Battery Supply Connection Bypass Analog Signal used to control the output power GSM850/900 RF Input VCC Control Input for GSM850/900 Pre-amplifier Ground
GND
VCC2
DCS/PCS_OUT DCS/PCS RF Output GND Ground VCC Control Input for DCS/PCS Pre-amplifier
9
GND
18
VCC2
2
PRELIMINARY DATA SHEET - Rev 1.0 01/2006
AWT6168R
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Maximum Ratings
PARAMETER Supply Voltage (VBATT) RF Input Power (RFIN) Control Voltage (VRAMP) Storage Temperature (TSTG)
MIN -0.3 -55
MAX +7 11 1.8 150
UNITS V dB m V C
Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability.
VCC2 >+2500 V <-2500 V DCS/PCS_IN >+2500 V <-2500 V BS >+2500 V <-2500 V TX_EN >+2500 V <-2500 V VBATT >+2500 V <-2500 V CEXT >+2500 V <-2500 V VRAMP >+2500 V <-2500 V GSM_IN >+1500 V <-1500 V
GND
1 2 3 4 5 6 7
18
17
16 15 14
DCS/PCS_OUT >+2500 V <-2500 V GND GND VOUT >+2500 V <-2500 V GND GND GSM_OUT >+2500 V <-2500 V
GND
13 12 11
8
VCC2 >+2500 V <-2500 V
9
GND
10
Figure 3: ESD Pin Rating
ELECTROSTATIC DISCHARGE SENSITIVITY
The AWT6168R part was tested to determine the ESD sensitivity of each package pin with respect to ground. All the package pins were subjected to an ESD pulse event using the Human Body Model outlined in JESD22-A114C.01 in either polarity with respect to ground. The pre and post test I-V characteristics of each pin are recorded. The ratings on each pin require that it sustain the ESD event and show no degradation.
PRELIMINARY DATA SHEET - Rev 1.0 01/2006
3
AWT6168R Table 4: Operating Conditions
PARAMETER
Case temperature (TC) Supply voltage (VBATT) Power supply leakage current Control Voltage Range Turn on Time (TON) Turn Off Time (TOFF) Rise Time (TRISE) Fall Time (TFALL) VRAMP Input Capacitance VRAMP Input Current Duty Cycle
MIN
-20 3.0 0.2 -
TYP
3.5 1 3 -
MAX
85 4.8 10 1.6 1 1 1 1 10 50
UNITS
C V A V s s s s pF A %
COMMENTS
VBATT = 4.8 V, VRAMP = 0 V, TX_EN = LOW No RF applied
VRAMP = 0.2 V, TX_EN = LOW Y HIGH PIN = 5 dB VRAMP = 0.2 V, TX_EN = HIGH Y LOW PIN = 5 dB POUT = -10 dBm Y PMAX (within 0.2 dB) POUT = PMAX Y -10 dBm (within 0.2 dB)
The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications.
Table 5: Digital Inputs
PARAMETER
Logic High Voltage Logic Low Voltage Logic High Current Logic Low Current
SYMBOL
VIH VIL |IIH| |IIL|
MIN
1.2 -
TYP
-
MAX
3.0 0.5 30 30
UNITS
V V mA mA
Table 6: Logic Control Table
OPERATIONAL MODE
GSM850/900 DCS/PCS PA DISABLED
BS
LOW HIGH -
T X _E N
HIGH HIGH LOW
4
PRELIMINARY DATA SHEET - Rev 1.0 01/2006
AWT6168R Table 7: Electrical Characteristics for GSM850 GMSK mode Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 s, Duty = 25%, ZIN = ZOUT = 50 , TC = 25 C, VRAMP = 1.6 V, BS = LOW, TX_EN = HIGH PARAMETER Operating Frequency Input Power (PIN) Output Power (PMAX) Degraded Output Power (POUT) PAE @ PMAX Forward Isolation 1 Forward Isolation 2 Cross Isolation (2Fo, 3Fo @ DCS/PCS port) Second Harmonic Third Harmonic n * fo (n > 4), Fo 12.75 GHz
( FIN )
MIN 824 0 34.5 32.8 48 -
TYP 3 35.8 33.8 53 -36 -30 -27 -20 -40 -30
MAX 849 5 -30 -20 -20 -10 -15 -10
UNIT MHz dB m dB m dB m % dB m dB m dB m dB m dB m dB m
COMMENTS
Freq = 824 to 849 MHz VBATT = 3.0 V, TC = 85 C PIN = 0 dBm Freq = 824 to 849 MHz TX_EN = 0 V, PIN = 5 dBm TX_EN = HIGH ,VRAMP = 0.2 V PIN = 5 dBm POUT < 34.5 dBm POUT < 34.5 dBm POUT < 34.5 dBm POUT < 34.5 dBm
VSWR = 8:1 All Phases , POUT < 34.5 dBm Stability Ruggedness RX Noise Power Input Return Loss -36 -30 dB m dB m FOUT < 1 GHz FOUT > 1 GHz POUT < 34.5 dBm FTX = 849 MHz, RBW = 100 kHz, FRX = 869 to 894 MHz, POUT < 34.5 dBm POUT < 34.5 dBm
No Permanent Degradation VSWR 10:1, All Phase Angles -84 1.5:1 -82 2.5:1 dB m VSWR
PRELIMINARY DATA SHEET - Rev 1.0 01/2006
5
AWT6168R Table 8: Electrical Characteristics for GSM850 8PSK mode Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 s, Duty = 25% ZIN = ZOUT = 50 , TC = 25 C, BS = LOW, TX_EN = HIGH
PARAMETER Operating Frequency Input Power PAE AC PR 200 kHz 400 kHz 600 kHz 1800 kHz EVM
( FIN )
MIN 824 0 20
TYP 3 25
MAX 849 5 -
UNIT MHz dB m %
COMMENTS
FIN = 824 to 849 MHz POUT set = +29 dBm
-
-39 -62 -74 -74 1
-34 -57 -64 -68 5
dBc/30 kHz dBc/30 kHz dBc/30 kHz dBc/100 kHz %
All conditions under Polar operation POUT = +29 dBm All Conditions under Polar operation POUT = +29 dBm
6
PRELIMINARY DATA SHEET - Rev 1.0 01/2006
AWT6168R Table 9: Electrical Characteristics for GSM900 GMSK mode Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 s, Duty = 25%, ZIN = ZOUT = 50 , TC = 25 C, VRAMP = 1.6 V, BS = HIGH, TX_EN = HIGH PARAMETER Operating Frequency Input Power (PIN) Output Power (PMAX) Degraded Output Power (POUT) PAE @ PMAX Forward Isolation 1 Forward Isolation 2 Cross Isolation (2Fo, 3Fo @ DCS/PCS port) Second Harmonic Third Harmonic n * fo (n > 4), Fo [ 12.75 GHz
( FIN )
MIN 880 0 34.5 32.5 50 -
TYP 3 35.5 33.5 55 -35 -30 -29 -25 -40 -29
MAX 915 5 -30 -20 -20 -10 -15 -8
UNIT MHz dB m dB m dB m % dB m dB m dB m dB m dB m dB m
COMMENTS
Freq = 880 to 915 MHz VBATT = 3.0 V, TC = 85 C PIN = 0 dBm Freq = 880 to 915 MHz TX_EN = 0 V, PIN = 5 dBm TX_EN = HIGH ,VRAMP = 0.2 V PIN = 5 dBm POUT < 34.5 dBm POUT < 34.5 dBm POUT < 34.5 dBm POUT < 34.5 dBm
VSWR = 8:1 All Phases , POUT < 34.5 dBm Stability Ruggedness -36 -30 dB m dB m FOUT < 1 GHz FOUT > 1 GHz POUT < 34.5 dBm FTX = 915 MHz, RBW = 100 kHz, FRX = 925 to 935 MHz, POUT < 34.5 dBm FTX = 915 MHz, RBW = 100 kHz, FRX = 935 to 960 MHz, POUT < 34.5 dBm POUT < 34.5 dBm
No Permanent Degradation VSWR 10:1, All Phase Angles -80 -85 1.5:1 -79 -83 2.5:1 dB m dB m VSWR
RX Noise Power Input Return Loss -
PRELIMINARY DATA SHEET - Rev 1.0 01/2006
7
AWT6168R Table 10: Electrical Characteristics for GSM900 8PSK mode Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 s, Duty = 25%, ZIN = ZOUT = 50 , TC = 25 C , BS =HIGH, TX_EN = HIGH
PARAMETER Operating Frequency Input Power PAE AC PR 200 kHz 400 kHz 600 kHz 1800 kHz EVM
( FIN )
MIN 880 0 20
TYP 3 25
MAX 915 5 -
UNIT MHz dB m %
COMMENTS
FIN = 880 to 915 MHz POUT set = +29 dBm
-
-38 -62 -73 -74 1
-34 -57 -64 -68 5
dBc/30 kHz dBc/30 kHz dBc/30 kHz dBc/100 kHz %
All conditions under Polar operation POUT = +29 dBm All Conditions under Polar operation POUT = +29 dBm
8
PRELIMINARY DATA SHEET - Rev 1.0 01/2006
AWT6168R Table 11: Electrical Characteristics for DCS GMSK mode Unless otherwise specified: VBATT = 3.5 V, VRAMP = 1.6 V, Pulse Width =1154 s, Duty = 25%, ZIN = ZOUT = 50 , TC = 25 C , BS =HIGH, TX_EN = HIGH PARAMETER Operating Frequency Input Power (PIN) Output Power (PMAX) Degraded Output Power (POUT) PAE @ PMAX Forward Isolation 1 Forward Isolation 2 Second Harmonic Third Harmonic n * fo (n > 4), Fo [ 12.75 GHz
( FIN )
MIN 1710 0 32.5 30.5 48 -
TYP 3 33.5 31.5 53 -40 -27 -25 -27 -34
MAX 1785 5 -33 -20 -10 -15 -10
UNIT MHz dB m dB m dB m % dB m dB m dB m dB m dB m
COMMENTS
Freq = 1710 to1785 MHz VBATT = 3.0 V, TC = 85 C PIN = 0 dBm Freq = 1710 to1785 MHz TX_EN = 0 V, PIN = 5 dBm TX_EN = HIGH ,VRAMP = 0.2 V PIN = 5 dBm POUT < 32.5 dBm POUT < 32.5 dBm POUT < 32.5 dBm
VSWR = 8:1 All Phases , POUT < 32.5 dBm Stability Ruggedness RX Noise Power Input Return Loss -36 -30 dB m dB m FOUT < 1 GHz FOUT > 1 GHz POUT < 32.5 dBm FTX = 1785 MHz, RBW = 100 kHz, FRX = 1805 to1880 MHz, POUT < 32.5 dBm POUT < 32.5 dBm
No Permanent Degradation VSWR 10:1, All Phase Angles -85 1.5:1 -80 2.5:1 dB m VSWR
PRELIMINARY DATA SHEET - Rev 1.0 01/2006
9
AWT6168R Table 12: Electrical Characteristics for DCS 8PSK mode Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 s, Duty = 25%, ZIN = ZOUT = 50 , TC = 25 C , BS =HIGH, TX_EN = HIGH
PARAMETER Operating Frequency Input Power PAE AC PR 200 kHz 400 kHz 600 kHz 1800 kHz EVM
( FIN )
MIN 1710 0 25
TYP 3 30
MAX 1785 5 -
UNIT MHz dB m %
COMMENTS
FIN = 1710 to 1785 MHz POUT set = +28.5 dBm
-
-38 -64 -77 -76 1
-34 -57 -64 -68 5
dBc/30 kHz dBc/30 kHz dBc/30 kHz dBc/100 kHz %
All conditions under Polar operation POUT = +28.5 dBm All Conditions under Polar operation POUT = +28.5 dBm
10
PRELIMINARY DATA SHEET - Rev 1.0 01/2006
AWT6168R Table 13: Electrical Characteristics for PCS GMSK mode Unless otherwise specified: VBATT = 3.5 V, VRAMP = 1.6 V, Pulse Width =1154 s, Duty = 25%, ZIN = ZOUT = 50 , TC = 25 C , BS =HIGH, TX_EN = HIGH PARAMETER Operating Frequency Input Power (PIN) Output Power (PMAX) Degraded Output Power (POUT) PAE @ PMAX Forward Isolation 1 Forward Isolation 2 Second Harmonic Third Harmonic n * fo (n > 4), Fo [ 12.75 GHz
( FIN )
MIN 1850 0 32.3 30.3 47 -
TYP 3 33.3 31.3 53 -39 -27 -17 -35 -33
MAX 1910 5 -32 -20 -10 -15 -10
UNIT MHz dB m dB m dB m % dB m dB m dB m dB m dB m
COMMENTS
Freq = 1850 to1910 MHz VBATT = 3.0 V, TC = 85 C PIN = 0 dBm Freq = 1850 to1910 MHz TX_EN = 0 V, PIN = 5 dBm TX_EN = HIGH ,VRAMP = 0.2 V PIN = 5 dBm POUT < 32.3 dBm POUT < 32.3 dBm POUT < 32.3 dBm
VSWR = 8:1 All Phases , POUT < 32.3 dBm Stability Ruggedness RX Noise Power Input Return Loss -36 -30 dB m dB m FOUT < 1 GHz FOUT > 1 GHz POUT < 32.3 dBm FTX = 1910 MHz, RBW = 100 kHz, FRX = 1930 to1990 MHz, POUT < 32.3 dBm POUT < 32.3 dBm
No Permanent Degradation VSWR 10:1, All Phase Angles -85 1.5:1 -80 2.5:1 dB m VSWR
PRELIMINARY DATA SHEET - Rev 1.0 01/2006
11
AWT6168R Table 14: Electrical Characteristics for PCS 8PSK mode Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 s, Duty = 25%, ZIN = ZOUT = 50 , TC = 25 C , BS =HIGH, TX_EN = HIGH
PARAMETER Operating Frequency Input Power PAE AC PR 200 kHz 400 kHz 600 kHz 1800 kHz EVM
( FIN )
MIN 1850 0 25
TYP 3 30
MAX 1910 5 -
UNIT MHz dB m %
COMMENTS
FIN = 1850 to 1910 MHz POUT set = +28.5 dBm
-
-38 -64 -78 -77 1
-34 -57 -64 -68 5
dBc/30 kHz dBc/30 kHz dBc/30 kHz dBc/100 kHz %
All conditions under Polar operation POUT = +28.5 dBm All Conditions under Polar operation POUT = +28.5 dBm
12
PRELIMINARY DATA SHEET - Rev 1.0 01/2006
AWT6168R
APPLICATION INFORMATION
18
17
VCC2
DCS/PCS RF INPUT 1 BAND SELECT TX ENABLE BATTERY VOLTAGE 2 1nF ++ 3 1nF ++ 47uF ++ 22nF ** DAC OUTPUT 6 10K* 27pF* 7 GSM850/900 RF INPUT 4 2.7pF ** 5 DCS/PCS_PIN BS TX_EN VBAT T CEXT VRAMP
GND
DCS/PCS_OUT GND GND
16 15 14 13 12 11 10
DCS/PCS RF OUTPUT
AWT6168R
VCC_OUT GND GND
GSM850/900 RF OUTPUT
VCC2
GSM_IN
GSM_OUT
8
9
* Filtering may be required to filter noise from baseband. ** This component should be placed as close to the device pin as possible. ++ These components are recommended as good design practice for improving noise rejection characteristics. The values specified are not critical as they may not be required in the final application.
Figure 3: Recommended Application Circuit
GND
PRELIMINARY DATA SHEET - Rev 1.0 01/2006
13
AWT6168R
PACKAGE OUTLINE
Figure 4: Package Outline
AWT6168R YYWW LLLLL-SS 054 CC
054
Figure 5: Branding Specification 14
PRELIMINARY DATA SHEET - Rev 1.0 01/2006
AWT6168R
Figure 6: Recommended PCB Layout Information
PRELIMINARY DATA SHEET - Rev 1.0 01/2006
15
AWT6168R
ORDERING INFORMATION
ORDER NUMBER TEMPERATURE RANGE PACKAGE DESCRIPTION RoHS-compliant 18 Pin 7 mm x 7 mm x 1.3 mm Surface Mount Module RoHS-compliant 18 Pin 7 mm x 7 mm x 1.3 mm Surface Mount Module COMPONENT PACKAGING
AWT6168RM11P8
-20 C to +85C
Tape and Reel, 2500 pieces per reel
AWT6168RM11P9
-20 C to +85C
Partial Tape and Reel
ANADIGICS, Inc.
141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com E-mail: Mktg@anadigics.com IMPORTANT NOTICE
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product's formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders.
WARNING
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited.
16
PRELIMINARY DATA SHEET - Rev 1.0 01/2006

▲Up To Search▲

Price & Availability of AWT6168R

	To Download AWT6168R Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .