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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
CMBT4123
GENERAL PURPOSE TRANSISTOR
N-P-N transistor
Marking CMBT4123 = 5B
PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m
Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (d.c.) Total power dissipation at Tamb = 25C D.C. current gain -IC = 2 mA; -VCE = 1 V
-V CBO -V CEO -V EBO -IC Ptot hFE
max. max. max. max. max min. max.
40 30 5 200 225 50 150
V V V mA mW
RATINGS (at TA = 25C unless otherwise specified) Limiting values Collector-base voltage (open emitter) -V CBO Collector-emitter voltage (open base) -V CEO Emitter-base voltage (open collector) -V EBO Collector current (d.c.) -IC Ptot Total power dissipation at Tamb = 25C
max. max. max. max. max
40 30 5 200 225
V V V mA mW
Continental Device India Limited
Data Sheet
Page 1 of 3
CMBT4123
Storage temperature Junction temperature THERMAL CHARACTERISTICS Tj = P (Rth j-t + Rth s-a) + Tamb Thermal resistance from junction to ambient
Tstg Tj
-55 to +150 max. 150
C C
Rth j-a
556
C/mW
CHARACTERISTICS (at TA = 25C unless otherwise specified) Collector-emitter breakdown voltage -V(BR)CEO min. -IC = 1 mA; IB = 0 Collector-base breakdown voltage -V(BR)CBO min. -IC = 10 mA; IE = 0 Emitter-base breakdown voltage -V(BR)EBO min. -IE = 10 mA; IC = 0 Collector cut-off current -I CBO max. -VCB = 20 V; IE = 0 V Emitter cut-off current -I EBO max. VBE = 3 V; IC =0 Output capacitance at f = 100 kHz Cc max. IE = 0; -VCB = 5 V Input capacitance at f = 100 kHz Ce max. IC = 0; -VBE = 0.5 V Saturation voltages -IC = 50 mA; -IB = 5 mA -IC = 50 mA; -IB = 5 mA D.C. current gain -IC = 2 mA; -VCE = 1 V -IC = 50 mA; -VCE = 1 V Noise figure at RS = 1 kW -IC = 100 mA; -VCE = 5 V f = 10 Hz to 15.7 kHz Transition frequency -IC = 10 mA; -VCE = 20 V; f = 100 MHz Small signal current gain -VCE = 1 V; -IC = 2 mA; f = 1 KHz
30 40 5 50 50 4 8
V V V nA nA pF pF
-VCEsat -VBEsat hFE hFE
max. max. min. max. min.
0.3 0.95 50 150 25
V V
NF
max.
6
dB
fT
min.
250
MHz
hfe
min. max.
50 200
Continental Device India Limited
Data Sheet
Page 2 of 3
Customer Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119 email@cdil.com www.cdilsemi.com
Continental Device India Limited Data Sheet Page 3 of 3

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