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| CZT853 SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT853 type is a high current NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage and high current amplifier applications. MARKING CODE: FULL PART NUMBER SOT-223 CASE PNP complement: CZT953 MAXIMUM RATINGS: (TA=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance TJ,Tstg JA -65 to +150 41.7 C C/W SYMBOL VCBO VCEO VEBO IC PD 200 100 6.0 6.0 3.0 UNITS V V V A W (Note 1) SYMBOL ICBO ICER ICBO IEBO BVCBO BVCER BVCEO BVEBO ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted) TEST CONDITIONS MIN VCB=150V VCE=150V, RBE 1k VCB=150V, TA=100C VEB=6.0V IC=100A IC=10mA, RBE 1k IC=10mA IE=100A IC=100mA, IB=5mA IC=2.0A, IB=100mA IC=5.0A, IC=5.0A, IB=500mA IB=500mA 200 200 100 6.0 TYP MAX 10 10 1.0 10 UNITS nA nA A nA V V V V 220 210 110 8.0 22 135 50 170 340 1.25 VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) mV mV mV V Notes: (1) FR-4 Epoxy PC Board with copper mounting pad area of 4in2 (minimum) R1 (30-January 2006) Central TM CZT853 SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR Semiconductor Corp. SYMBOL hFE hFE hFE hFE fT Cob ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted) TEST CONDITIONS MIN VCE=2.0V, IC=10mA VCE=2.0V, IC=2.0A VCE=2.0V, IC=4.0A VCE=2.0V, IC=10A VCE=10V, IC=100mA, f=50MHz VCB=10V, IE=0, f=1.0MHz 100 100 50 20 TYP MAX UNITS 200 100 30 190 38 300 MHz pF SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) COLLECTOR 3) EMITTER 4) COLLECTOR MARKING CODE: FULL PART NUMBER R1 (30-January 2006) |
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