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| S T M4639 S amHop Microelectronics C orp. Nov,10 2005 P -C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S -35 F E AT UR E S ( m W ) Max 5 ID -14A R DS (ON) S uper high dense cell design for low R DS (ON). 8.5 @ V G S = -10V 13 @ V G S = -4.0V R ugged and reliable. S urface Mount P ackage. E S D P rocteced S O-8 1 ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous b -P ulsed Drain-S ource Diode Forward C urrent Maximum P ower Dissipation Operating Junction and S torage Temperature R ange S ymbol VDS VGS ID IDM IS PD TJ, TS TG Limit 35 20 -14 -56 -1.7 2.5 -55 to 150 Unit V V A A A W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient R JA 50 C /W 1 S T M4639 E LE CTR ICAL CHAR ACTE R IS TICS (TA =25 C unless otherwise noted) Parameter 5 S ymbol BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS c Condition VGS = 0V, ID = -250uA VDS = -28V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = -250uA VGS = -10V, ID =-14A VGS = -4.0V, ID = -10A VDS = -5V, VGS = -10V VDS = -10V, ID = -14A Min Typ C Max Unit -35 -1 10 -0.8 -2.0 V uA uA V OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 8.5 m-ohm 13 m-ohm -50 32 4094 641 351 VD = -15V, ID = -14A, VGEN = - 10V, R GE N = 3 ohm VDS=-15V, ID=-14A,VGS=-10V VDS=-15V, ID=-14A,VGS=-4.0V VDS =-15V, ID = -14A, VGS =-10V 2 A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance VDS =-15V, VGS = 0V f =1.0MHZ S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd 24 68 484 188 95 40 6 23 ns ns ns ns nC nC nC nC S T M4639 E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted) Parameter Diode Forward Voltage Maximum Body-Diode Continuous Current S ymbol VSD Condition VGS = 0V, Is = -1.7A VGS = 0V Min Typ Max Unit -0.7 -1.2 -25 V A DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS C Is Notes a.Surface Mounted on FR 4 Board, t <=10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 25 V G S =-10V 20 V G S =-4.5V 20 15 - ID, Drain C urrent(A) 15 V G S =-2.5V -ID, Drain C urrent (A) 10 5 -55 C 1 0 T j=125 C 0 0.5 1.0 1.5 25 C 2.0 2.5 3.0 10 V G S =-2V 5 0 0 0.5 1 1.5 2 2.5 3 -V DS , Drain-to-S ource Voltage (V ) -V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 18 15 F igure 2. Trans fer C haracteris tics 1.8 R DS (ON), On-R es is tance Normalized 1.6 1.4 V G S =-10V ID=-14A R DS (on) (m W) 12 9 6 3 0 V G S =4V V G S =10V 1.2 V G S =-4V ID=-10A 1.0 0.8 1 5 10 15 20 25 0 25 50 75 100 125 150 T j( C ) -ID, Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage 3 F igure 4. On-R es is tance Variation with Drain C urrent and Temperature S T M4639 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=-250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ID=-250uA 6 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 30 125 C 25 75 C 25 C F igure 6. B reakdown V oltage V ariation with T emperature 20.0 125 C 25 C ID=-14A 15.0 -Is , S ource-drain current (A) 10.0 5.0 R DS (on) (m W) 20 15 10 5 0 75 C 1.0 0 2 4 6 8 10 0 0.4 0.8 1.2 1.6 2.0 -V G S , G ate-S ource Voltage (V ) -V S D, B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 S T M4639 C is s 4000 -V G S , G ate to S ource V oltage (V ) 4800 10 8 6 4 2 0 VDS =-15V ID=-14A C , C apacitance (pF ) 3200 2400 1600 C os s 800 C rs s 0 0 5 10 15 20 25 30 6 0 12.5 25 37.5 50 62.5 75 Qg, T otal G ate C harge (nC ) 87.5 100 -V DS , Drain-to S ource Voltage (V ) F igure 9. C apacitance F igure 10. G ate C harge 6000 S witching T ime (ns ) ID, Drain C urrent (A) 80 10 RD ON S( )L im i t 10 1000 600 100 T D(off) ms 10 0m Tf Tr s 1 1s DC T D(on) 10 1 3 6 10 VDS=-15V,ID=-14A VGS=-10V 0.1 0.03 VGS =-10V S ingle P ulse T A=25 C 0.1 1 10 30 50 60 100 300 600 R g, G ate R es is tance (W) -V DS , Drain-S ource V oltage (V ) F igure 11.s witching characteris tics F igure 12. Maximum S afe O perating Area 5 S T M4639 -VDD ton V IN D R GE N G 90% toff tr 90% RL V OUT td(on) V OUT td(off) 90% 10% tf 10% S V IN 50% 10% 50% INVE R TE D P ULS E WIDTH F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms 2 r(t),Normalized E ffective T ransient T hermal Impedance 1 Duty C ycle=0.5 0.2 0.1 0.1 0.05 0.02 S ingle P uls e 0.01 10 -4 P DM t1 1. 2. 3. 4. 10 -2 t2 R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 10 100 10 -3 10 -1 1 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 6 S T M4639 PAC K AG E OUT LINE DIME NS IONS S O-8 1 L E D 0.015X45X A e 0.05 TYP. B 0.016 TYP. A1 0.008 TYP. C H S Y MB OLS A A1 D E H L MILLIME T E R S MIN 1.35 0.10 4.80 3.81 5.79 0.41 0X MAX 1.75 0.25 4.98 3.99 6.20 1.27 8X MIN 0.053 0.004 0.189 0.150 0.228 0.016 0X INC HE S MAX 0.069 0.010 0.196 0.157 0.244 0.050 8X 7 S T M4639 SO-8 Tape and Reel Data SO-8 Carrier Tape unit:P PACKAGE SOP 8N 150O A0 6.40 B0 5.20 K0 2.10 D0 r1.5 (MIN) D1 r1.5 + 0.1 - 0.0 E 12.0 O0.3 E1 1.75 E2 5.5 O0.05 P0 8.0 P1 4.0 P2 2.0 O0.05 T 0.3 O0.05 SO-8 Reel UNIT:P TAPE SIZE 12 P REEL SIZE r330 M 330 O 1 N 62 O1.5 W 12.4 + 0.2 W1 16.8 - 0.4 H r12.75 + 0.15 K S 2.0 O0.15 G R V 8 |
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