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APTC60HM35T3
Full - Bridge
Super Junction MOSFET
VDSS = 600V RDSon = 35m max @ Tj = 25C ID = 72A @ Tc = 25C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies
11 22 19 Q2 23 8 Q4 7 10
Power Module
13 14 Q1 Q3
18
Features * - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration
26
4 3 29 15 30 31 R1 32 16
27
* * * *
28 27 26 25 29 30
23 22
20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * Each leg can be easily paralleled to achieve a phase leg of twice the current capability
All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ...
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
Tc = 25C
V m W A mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
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APTC60HM35T3 - Rev 0 September, 2004
Max ratings 600 72 54 200 20 35 416 20 1 1800
Unit V A
APTC60HM35T3
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol BVDSS IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V, ID = 375A Min 600
VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V
Typ 1
Max 40 375 35 3.9 150
Unit V A m V nA
Tj = 25C Tj = 125C 2.1
VGS = 10V, ID = 72A VGS = VDS, ID = 5.4mA VGS = 20 V, VDS = 0V
3
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 300V ID = 72A Inductive Switching @ 125C VGS = 15V VBus = 400V ID = 72A R G = 2.5 Inductive switching @ 25C VGS = 15V, VBus = 400V ID = 72A, R G = 2.5 Inductive switching @ 125C VGS = 15V, VBus = 400V ID = 72A, R G = 2.5
Min
Typ 14 5.13 0.42 518 58 222 21 30 283 84 1340 1960 2192 2412
Max
Unit nF
nC
ns
J J
Source - Drain diode ratings and characteristics
Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge
Test Conditions Tc = 25C Tc = 80C
Min
Typ 72 54
Max
Unit A
VGS = 0V, IS = - 72A IS = - 72A VR = 350V diS/dt = 200A/s Tj = 25C Tj = 25C 580 46
1.2 6
V V/ns ns C
APTC60HM35T3 - Rev 0 September, 2004
Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1. dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 72A di/dt 200A/s VR VDSS Tj 150C
APT website - http://www.advancedpower.com
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APTC60HM35T3
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min 2500 -40 -40 -40
Typ
Max 0.30 150 125 100 4.7 110
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To heatsink
M4
Temperature sensor NTC
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.16 K
Min
Typ 68 4080
Max
Unit k K
RT =
R 25 1 1 exp B25 / 85 T - T 25
T: Thermistor temperature RT : Thermistor value at T
Package outline
1
12
APT website - http://www.advancedpower.com
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APTC60HM35T3 - Rev 0 September, 2004
17
28
APTC60HM35T3
Typical Performance Curve
0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.5 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 1 10 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9 0.7
0 0.00001
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 400 360 320 280 240 200 160 120 80 40 0 0 280 6.5V 6V 5.5V 5V 4.5V 4V 5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current I D, DC Drain Current (A)
Normalized to VGS=10V @ 36A
Transfert Characteristics 240 200 160 120 80 40 0 25 0 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 7 TJ=125C TJ=25C TJ=-55C
VDS > ID(on)xRDS (on)MAX 250s pulse test @ < 0.5 duty cycle
ID, Drain Current (A)
I D, Drain Current (A)
VGS=15&10V
RDS(on) Drain to Source ON Resistance
1.1 1.05 1 0.95 0.9 0
DC Drain Current vs Case Temperature 80
VGS =10V
70 60 50 40 30 20 10 0 25 50 75 100 125 TC, Case Temperature (C) 150
VGS=20V
20
40
60
80
100
120
I D, Drain Current (A)
APT website - http://www.advancedpower.com
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APTC60HM35T3 - Rev 0 September, 2004
APTC60HM35T3
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) ON resistance vs Temperature
3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
V GS=10V ID= 72A
Threshold Voltage vs Temperature 1.2
VGS(TH), Threshold Voltage (Normalized)
1000
I D, Drain Current (A)
1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C)
100 10
limited by RDSon
100 s 1 ms DC line 10 ms
1 0.1 1
Single pulse TJ =150C 10 100 1000
VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage
VGS , Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage 100000 Ciss
C, Capacitance (pF)
14 12 10 8 6 4 2 0 0 100 200 300 400 Gate Charge (nC) 500 600
APTC60HM35T3 - Rev 0 September, 2004
10000
ID=72A TJ=25C
V DS=120V VDS=300V V DS =480V
Coss
1000 Crss 100
10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
APT website - http://www.advancedpower.com
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APTC60HM35T3
350 300
td(on) and td(off) (ns)
Delay Times vs Current 120 td(off)
VDS=400V RG=2.5 TJ=125C L=100H
Rise and Fall times vs Current
VDS=400V RG=2.5 T J=125C L=100H
100
tr and t f (ns)
250 200 150 100 50 0 0 20 40 60 80 100 120 ID, Drain Current (A) Switching Energy vs Current 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0
Switching Energy (mJ)
VDS=400V RG=2.5 TJ=125C L=100H
tf
80 60 40 20 0 0
td(on)
tr
20
40
60
80
100
120
ID, Drain Current (A) Switching Energy vs Gate Resistance 10 8 6 4 2 0
VDS=400V ID=72A T J=125C L=100H
Switching Energy (mJ)
Eoff Eon
Eoff
Eon
20
40 60 80 100 ID, Drain Current (A)
120
0
5
10
15
20
25
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 TJ=150C 100 TJ =25C 10
Operating Frequency vs Drain Current 140 120
Frequency (kHz)
ZCS ZVS
100 80 60 40 20 0 15 20 25 30 35 40 45 50 55 60 65 ID, Drain Current (A)
VDS=400V D=50% RG=2.5 TJ=125C TC=75C
hard switching
I DR, Reverse Drain Current (A)
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V)
APTC60HM35T3 - Rev 0 September, 2004
"COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG". APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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