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APTM20UM03F-ALN
Single Switch MOSFET Power Module
SK S D
VDSS = 200V RDSon = 3m max @ Tj = 25C ID = 580A @ Tc = 25C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Power MOS 7(R) FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration * AlN substrate for improved thermal performance Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Low profile
G
DK
DK
S
D
SK G
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
1-6
APTM20UM03F- AlN Rev 0
July, 2004
Tc = 25C
Max ratings 200 580 434 2320 30 3 2270 100 50 3000
Unit V A V m W A
APTM20UM03F-ALN
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol BVDSS IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V, ID = 2mA Min 200
VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V
Typ
Max 500 3000 3 5 400
Unit V A m V nA
Tj = 25C Tj = 125C 3
VGS = 10V, ID = 290A VGS = VDS, ID = 15mA VGS = 30 V, VDS = 0V
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 100V ID = 580A Inductive switching @ 125C VGS = 15V VBus = 133V ID = 580A R G = 0.8 Inductive switching @ 25C VGS = 15V, VBus = 133V ID = 580A, R G = 0.8 Inductive switching @ 125C VGS = 15V, VBus = 133V ID = 580A, R G = 0.8
Min
Typ 43.3 13.9 0.87 840 318 402 32 64 88 116 5 5.6 5.6 5.9
Max
Unit nF
nC
ns
mJ
mJ
Source - Drain diode ratings and characteristics
Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge
Test Conditions
Min
Typ
Tc = 25C Tc = 80C VGS = 0V, IS = - 580A IS = - 580A VR = 500V diS/dt = 600A/s IS = - 580A VR = 500V diS/dt = 600A/s Tj = 25C Tj = 125C Tj = 25C Tj = 125C 5.4 20.4
Max 580 434 1.3 8 230 450
Unit A V V/ns ns C
July, 2004 2-6 APTM20UM03F- AlN Rev 0
Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1. dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 580A di/dt 700A/s VR VDSS Tj 150C
APT website - http://www.advancedpower.com
APTM20UM03F-ALN
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min, Isol<1mA, 50/60Hz
Min 2500 -40 -40 -40 3 2
Typ
Max 0.055 150 125 100 5 3.5 280
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5
Package outline
APT website - http://www.advancedpower.com
3-6
APTM20UM03F- AlN Rev 0
July, 2004
APTM20UM03F-ALN
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.06 Thermal Impedance (C/W) 0.05 0.04 0.03 0.02 0.01 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 0.01 0.1 1 10 Single Pulse
0 0.00001
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics
VGS=15V
2100 1800 ID, Drain Current (A) 1500 1200 900 600 300 0
Transfert Characteristics 1400 ID, Drain Current (A) 1200 1000 800 600 400 200 0 0
TJ=25C TJ=125C TJ=-55C VDS > ID(on)xRDS (on)MAX 250s pulse test @ < 0.5 duty cycle
10V 9V 8.5V 8V 7.5V 7V 6.5V
0
4
8
12
16
20
24
28
VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.2 ID, DC Drain Current (A)
Normalized to V GS=10V @ 290A
1 2 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V)
RDS(on) Drain to Source ON Resistance
DC Drain Current vs Case Temperature 600 500 400 300 200 100 0
1.1 1
VGS=10V
VGS=20V
0.9 0.8 0 225 450 675 900 ID, Drain Current (A)
25
50
75
100
125
150
July, 2004 4-6 APTM20UM03F- AlN Rev 0
TC, Case Temperature (C)
APT website - http://www.advancedpower.com
APTM20UM03F-ALN
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 Ciss C, Capacitance (pF) Coss 10000 ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area 10000
limited by RDSon
VGS=10V ID= 290A
1000
100s 1ms 10ms 100ms
100
10
Single pulse TJ=150C 1 10 100 1000 VDS, Drain to Source Voltage (V)
1
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage 14 I D=580A V DS=40V 12 TJ =25C 10 8 6 4 2 0 0 120 240 360 480 600 720 840 960 Gate Charge (nC)
July, 2004
VDS=100V
VDS=160V
1000
Crss
100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
APT website - http://www.advancedpower.com
5-6
APTM20UM03F- AlN Rev 0
APTM20UM03F-ALN
Delay Times vs Current 120 100 t d(on) and td(off) (ns) 80 60 40 20 0 100 200 300 400 500 600 700 800 900 I D, Drain Current (A) Switching Energy vs Current 12 Switching Energy (mJ) 10 Eon and Eoff (mJ) 8 6 4 2 0 100 200 300 400 500 600 700 800 900 I D, Drain Current (A) Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) 350 300 Frequency (kHz) 250 200 150 100 50 0 70 170
V DS=133V D=50% RG=0.8 T J=125C T C=75C ZCS ZVS V DS=133V RG=0.8 T J=125C L=100H VDS=133V RG=0.8 T J=125C L=100H
Rise and Fall times vs Current 160 140 t r and tf (ns)
V DS=133V R G=0.8 T J=125C L=100H
t d(off)
120 100 80 60 40 20
tf
td(on)
tr
0 100 200 300 400 500 600 700 800 900 ID, Drain Current (A) Switching Energy vs Gate Resistance 20 18 16 14 12 10 8 6 4 0 1 2 3456 7 Gate Resistance (Ohms) 8 9
VDS=133V ID=580A TJ=125C L=100H
Eoff Eon
Eoff
Eon
Source to Drain Diode Forward Voltage 10000 1000 100 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
July, 2004
TJ =150C
TJ=25C
Hard switching
270
370
470
570
I D, Drain Current (A)
VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
6-6
APTM20UM03F- AlN Rev 0

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