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BFR193L3
NPN Silicon RF Transistor* * For low noise, high-gain amplifiers up to 2 GHz * For linear broadband amplifiers * fT = 8 GHz, F = 1 dB at 900 MHz * Short term description
1 2 3
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BFR193L3
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS 95C Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 2)
Marking RC
Pin Configuration 1=B 2=E 3=C
Package TSLP-3-1
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA T stg Symbol RthJS
Value 12 20 20 2 80 10 580 150 -55 ... 150 -55 ... 150 Value tbd
Unit V
mA mW C
Unit K/W
1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance
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2005-09-23
BFR193L3
Electrical Characteristics at TA = 25C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, I E = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gainIC = 30 mA, VCE = 8 V, pulse measured hFE 70 100 140 IEBO 1 A ICBO 100 nA ICES 100 A V(BR)CEO 12 V Symbol min. Values typ. max. Unit
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BFR193L3
Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT IC = 50 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded Collector emitter capacitance VCE = 10 V, f = 1 MHz, VBE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Noise figure IC = 10 mA, VCE = 8 V, Z S = ZSopt , f = 900 MHz IC = 10 mA, VCE = 8 V, Z S = ZSopt , f = 1.8 GHz Power gain, maximum available1) IC = 30 mA, VCE = 8 V, Z S = ZSopt , ZL = ZLopt , f = 900 MHz IC = 30 mA, VCE = 8 V, Z S = ZSopt , ZL = ZLopt , f = 1.8 GHz Transducer gain IC = 30 mA, VCE = 8 V, Z S = ZL = 50 , f = 900 MHz IC = 30 mA, VCE = 8 V, Z S = ZL = 50 , f = 1.8 GHz
1G 1/2) ma = |S21 / S12| (k-(k-1)
Unit
6 -
8 0.63
0.9
GHz pF
Ccb
Cce
-
0.22
-
Ceb
-
2.25
-
F G ma |S 21e|2 14.5 9 19 12.5 1 1.6 -
dB
dB
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BFR193L3
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data:
IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 0.2738 24 1.935 3.8742 0.94371 1 1.1824 18.828 0.96893 1.1828 1.0037 0 3 fA V V fF ps mA V ns BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = NK = FC = 125 0.26949 14.267 0.037925 1.8368 0.76534 0.70276 0.69477 0 0.30002 0 0 0.72063 A A V deg fF NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 0.95341 10.627 1.4289 0.037409 0.91763 0.11938 0.48654 0.8 935.03 0.053563 0.75 1.11 300 fA fA mA V fF V eV K
All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut fur Mobil- und Satellitentechnik (IMST)
Package Equivalent Circuit:
C4 C1 L2 B C7 R1 L3 C
B'
Transistor Chip E'
C'
C6
C2
L1
C3
C5
L1 = L2 = L3 = C1 = C2 = C3 = C4 = C5 = C6 = C7 = R1 =
0.575 0.575 0.275 33 28 131 8 8 24 300 204
nH nH nH fF fF fF fF fF fF fF
Valid up to 6GHz
E
For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes
EHA07536
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Package TSLP-3-1
BFR193L3
Package Outline
Top view Bottom view
0.6 0.05 0.5 0.035
0.65 0.05
1)
0.05 MAX.
3 2
1 0.05
3 1 2
1
2 x 0.25 0.035
0.45
1)
Pin 1 marking
0.35 0.05 2 x 0.15 0.035
1)
1) Dimension applies to plated terminal
Foot Print
For board assembly information please refer to Infineon website "Packages"
0.275
0.6
0.35
0.35
0.945
0.3
1
0.355
0.2 0.225 0.225 0.15
Copper Solder mask
R0.1
0.2
0.17
Stencil apertures
Marking Layout
Type code
0.315
0.25 0.035
0.4 +0.1
1)
BFR193L3
Laser marking
Pin 1 marking
Example
Standard Packing
Reel o180 mm = 15.000 Pieces/Reel
4 0.5
1.16
Pin 1 marking
0.76
8
5
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BFR193L3
Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 Munchen (c) Infineon Technologies AG 2005. All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.Infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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2005-09-23

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