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| HTT1132E Silicon NPN Epitaxial Twin Transistor REJ03G0008-0100Z Rev.1.00 Apr.14.2003 Features * Include 2 transistors in a small size SMD package: EMFPAK-6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5872 Q2: Equivalent OSC transistor 2SC5849 Outline EMFPAK-6 Pin Arrangement 6 5 4 B1 6 Q1 E2 5 Q2 B2 4 1 2 3 1 2 3 C1 E1 C2 1. Collector Q1 2. Emitter Q1 3. Collector Q2 4. Base Q2 5. Emitter Q2 6. Base Q1 Note: Mark is "B". Rev.1.00, Apr.14.2003, page 1 of 21 HTT1132E Absolute Maximum Ratings (Ta = 25 C) Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Q1 16 6 0.8 50 Total 200* 150 -55 to +150 Q2 15 6 1.5 80 Total 200* 150 -55 to +150 Unit V V V mA mW C C *Value on PCB. (FR-4 (13 x 13 x 0.635 mm)). Collector Power Dissipation Curve Pc* (mW) 250 200 *Value on PCB. (FR-4 (13 x13 x 0.635 mm)) 2 devices total Collector Power Dissipation 150 100 50 0 50 100 150 Ta (C) 200 Ambient temperature Rev.1.00, Apr.14.2003, page 2 of 21 HTT1132E Q1 Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Symbol V(BR)CBO ICBO ICEO IEBO hFE Min 16 90 8 13 Typ 120 0.25 0.38 10 12 16 1.0 Max 0.1 0.1 0.1 140 0.35 1.6 Unit V A A A pF pF GHz GHz dB dB Test Condition IC = 10 A, IE = 0 VCB = 15 V, IE = 0 VCE = 6V, RBE = infinite VEB = 0.8 V, IC = 0 VCE = 1 V, IC = 5 mA VCB = 1 V, f = 1 MHz Emitter ground VCB = 1 V, f = 1 MHz VCE = 1 V, IC = 5 mA, f = 1 GHz VCE = 3V, IC = 15mA, f = 1 GHz VCE = 1 V, IC = 5 mA, f = 900 MHz, S = L = 50 Reverse transfer capacitance Cre Collector output capacitance Gain bandwidth product Gain bandwidth product Forward transfer coefficient Noise figure Cob fT fT |S21|2 NF Q2 Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Symbol V(BR)CBO ICBO ICEO IEBO hFE Min 15 90 2 7 Typ 120 0.50 0.68 4 11 11 1.7 1.1 Max 0.1 0.1 0.1 140 0.65 2.3 Unit V A A A pF pF GHz GHz dB dB dB Test Condition IC = 10 A, IE = 0 VCB = 15 V, IE = 0 VCE = 6V, RBE = infinite VEB = 1.5V, IC = 0 VCE = 1 V, IC = 5 mA VCB = 1 V, f = 1 MHz Emitter ground VCB = 1 V, f = 1 MHz VCE = 1 V, IC = 5 mA, f = 1 GHz VCE =3V, IC = 50mA, f = 1 GHz VCE = 1 V, IC = 5 mA, f = 900 MHz S = L = 50 VCE = 1 V, IC = 5 mA, f = 900 MHz Reverse transfer capacitance Cre Collector output capacitance Gain bandwidth product Gain bandwidth product Forward transfer coefficient Noise figure Noise figure Cob fT fT |S21|2 NF NF Rev.1.00, Apr.14.2003, page 3 of 21 HTT1132E Q1 Main Characteristics Typical Output Characteristics 20 Typical Forward Transfer Characteristics 50 VCE = 1 V 160 A (mA) 140 A Collector Current IC (mA) 16 12 120 A 40 100 A IC 30 Collector Current 80 A 8 60 A 20 40 A 4 IB = 20 A 1 2 3 4 5 6 10 0 0 0.2 0.4 0.6 0.8 VBE (V) 1.0 Collector to Emitter Voltage VCE (V) Base to Emitter Voltage 200 Reverse Transfer Capacitance Cre (pF) DC Current Transfer Ratio vs. Collector Current Reverse Transfer Capacitance vs. Collector to Base Voltage 0.4 Emitter ground f = 1 MHz 0.3 DC Current Transfer Ratio hFE VCE = 1 V 100 0.2 0.1 0 0.1 1.0 Collector Current 10 IC (mA) 100 0 0.5 1.0 1.5 2.0 Collector to Base Voltage VCB (V) Rev.1.00, Apr.14.2003, page 4 of 21 HTT1132E Gain Bandwidth Product vs. Collector Current Noise Figure vs. Collector Current 8 f = 900 MHz 15 fT (GHz) f = 1 GHz NF (dB) 7 6 5 4 3 2 1 VCE = 1 V Gain Bandwidth Product 10 VCE = 3 V VCE = 2 V VCE = 1 V 5 Noise Figure VCE = 3 V 0 1 0 2 5 10 20 50 100 1 2 5 10 20 50 100 Collector Current IC (mA) Collector Current IC (mA) S21 Parameter vs. Collector Current 20 f = 900 MHz |S21|2 (dB) VCE = 3 V 16 12 S21 Parameter 8 VCE = 1 V 4 0 1 2 5 10 20 50 100 Collector Current IC (mA) Rev.1.00, Apr.14.2003, page 5 of 21 HTT1132E Q2 Main Characteristics Typical Output Characteristics 20 (mA) 180 A 160 A 120 A Collector Current IC (mA) Typical Forward Transfer Characteristics 25 VCE = 1 V 20 16 12 140 A IC 100 A 15 Collector Current 80 A 8 60 A 10 40 A 4 IB = 20 A 5 0 1 2 3 4 5 6 0 0.2 0.4 0.6 0.8 VBE (V) 1.0 Collector to Emitter Voltage VCE (V) Base to Emitter Voltage DC Current Transfer Ratio hFE VCE = 1 V Reverse Transfer Capacitance Cre (pF) 200 DC Current Transfer Ratio vs. Collector Current 1.0 Reverse Transfer Capacitance vs. Collector to Base Voltage Emitter ground f = 1 MHz 0.8 0.6 100 0.4 0.2 0 0.1 1.0 Collector Current 10 IC (mA) 100 0 0.5 1.0 1.5 2.0 Collector to Base Voltage VCB (V) Rev.1.00, Apr.14.2003, page 6 of 21 HTT1132E Gain Bandwidth Product vs. Collector Current 15 f = 1 GHz 5 VCE = 1 V f = 900 MHz Noise Figure vs. Collector Current fT (GHz) Gain Bandwidth Product 10 NF (dB) Noise Figure VCE = 3 V 4 3 VCE = 1 V 5 2 1 0 1 0 2 5 10 20 50 Collector Current IC (mA) 100 1 2 5 10 20 50 Collector Current IC (mA) 100 S21 Parameter vs. Collector Current 20 f = 900 MHz |S21|2 (dB) 16 VCE = 2 V 12 VCE = 1 V S21 Parameter 8 4 0 1 2 5 10 20 50 Collector Current IC (mA) 100 Rev.1.00, Apr.14.2003, page 7 of 21 HTT1132E Q1 S Parameter (VCE = 1 V, IC = 3 mA, ZO = 50 ) S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 MAG 0.916 0.884 0.845 0.800 0.749 0.704 0.658 0.622 0.580 0.553 0.523 0.500 0.479 0.464 0.450 0.437 0.429 0.422 0.414 0.411 0.407 0.405 0.405 0.406 0.408 0.409 0.411 0.415 0.419 0.422 ANG -12.4 -23.8 -35.4 -46.1 -56.8 -66.7 -76.1 -85.0 -93.6 -100.9 -108.4 -115.4 -122.4 -128.5 -134.8 -140.5 -146.3 -151.3 -156.7 -161.8 -166.6 -171.0 -175.5 179.9 176.1 172.1 168.5 164.9 161.2 158.0 S21 MAG 9.04 8.71 8.31 7.92 7.48 7.06 6.61 6.21 5.83 5.47 5.13 4.83 4.55 4.30 4.07 3.87 3.68 3.50 3.34 3.20 3.06 2.94 2.83 2.72 2.63 2.54 2.45 2.37 2.30 2.23 ANG 170.0 160.2 151.3 143.6 136.3 129.8 123.8 118.4 113.4 109.0 104.9 101.1 97.6 94.3 91.2 88.4 85.7 83.1 80.5 78.1 75.7 73.5 71.3 69.2 67.2 65.2 63.2 61.3 59.4 57.5 S12 MAG 0.0329 0.0379 0.0503 0.0588 0.0698 0.0801 0.0892 0.0934 0.0987 0.1025 0.1076 0.1079 0.1139 0.1156 0.1168 0.1203 0.1232 0.1244 0.1255 0.1299 0.1326 0.1357 0.1373 0.1406 0.1440 0.1468 0.1492 0.1519 0.1550 0.1581 ANG 89.7 77.6 66.2 63.6 61.7 56.1 52.6 51.2 48.4 47.2 45.3 44.9 43.1 43.9 43.1 42.9 43.0 42.5 43.1 43.3 43.1 43.1 43.1 43.6 43.5 44.2 44.0 45.0 44.5 44.8 S22 MAG 0.979 0.953 0.906 0.860 0.809 0.760 0.712 0.670 0.634 0.598 0.570 0.543 0.520 0.497 0.479 0.462 0.450 0.436 0.422 0.412 0.403 0.395 0.386 0.380 0.372 0.367 0.359 0.359 0.352 0.351 ANG -6.6 -13.6 -19.7 -25.4 -29.9 -33.7 -37.1 -39.8 -41.8 -43.8 -45.5 -47.0 -48.3 -49.6 -50.6 -51.9 -53.0 -54.0 -54.9 -55.9 -57.1 -58.2 -59.4 -60.6 -61.7 -62.6 -64.3 -65.4 -66.8 -68.0 Rev.1.00, Apr.14.2003, page 8 of 21 HTT1132E Q1 S Parameter (VCE = 1 V, IC = 5 mA, ZO = 50 ) S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 MAG 0.852 0.809 0.739 0.676 0.616 0.566 0.525 0.489 0.461 0.442 0.423 0.409 0.398 0.389 0.386 0.381 0.381 0.376 0.378 0.376 0.378 0.380 0.385 0.386 0.392 0.395 0.399 0.402 0.407 0.412 ANG -17.6 -34.3 -49.1 -63.5 -76.4 -88.0 -98.1 -107.5 -116.0 -123.6 -131.2 -138.0 -144.4 -150.2 -155.6 -160.6 -165.9 -170.3 -175.3 -179.5 176.2 172.6 168.9 165.6 162.0 159.0 155.5 152.7 150.0 146.9 S21 MAG 14.12 13.17 12.12 11.10 10.09 9.18 8.32 7.60 6.97 6.42 5.93 5.51 5.15 4.82 4.53 4.28 4.05 3.84 3.66 3.49 3.33 3.19 3.06 2.94 2.83 2.73 2.63 2.55 2.46 2.39 ANG 165.7 153.2 142.5 133.5 125.5 118.8 113.2 108.3 103.9 100.1 96.6 93.4 90.5 87.7 85.1 82.8 80.4 78.2 76.0 73.9 71.9 69.9 68.0 66.2 64.3 62.6 60.8 59.1 57.4 55.6 S12 MAG 0.0299 0.0369 0.0472 0.0553 0.0598 0.0674 0.0737 0.0762 0.0793 0.0847 0.0869 0.0917 0.0954 0.0966 0.1027 0.1048 0.1095 0.1130 0.1161 0.1217 0.1252 0.1281 0.1335 0.1368 0.1412 0.1440 0.1504 0.1540 0.1586 0.1634 ANG 74.4 67.3 60.9 63.3 55.4 52.9 52.4 51.1 51.0 50.1 50.8 50.9 50.5 49.5 50.7 50.7 50.4 51.3 51.7 51.5 51.8 51.9 52.6 52.5 52.2 53.3 52.9 53.3 52.4 52.2 S22 MAG 0.965 0.906 0.832 0.756 0.692 0.629 0.580 0.539 0.507 0.475 0.453 0.430 0.412 0.396 0.382 0.373 0.362 0.353 0.341 0.338 0.329 0.323 0.318 0.314 0.310 0.307 0.299 0.299 0.294 0.293 ANG -9.2 -19.5 -26.3 -32.1 -36.5 -39.9 -42.0 -44.1 -45.5 -46.5 -47.4 -48.5 -49.2 -50.0 -50.7 -51.6 -52.3 -53.6 -54.5 -55.4 -56.5 -57.5 -58.9 -60.1 -61.5 -62.5 -64.1 -65.6 -67.4 -68.4 Rev.1.00, Apr.14.2003, page 9 of 21 HTT1132E Q1 S Parameter (VCE = 1 V, IC = 7 mA, ZO = 50 ) S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 MAG 0.798 0.726 0.648 0.584 0.528 0.485 0.451 0.430 0.411 0.398 0.386 0.382 0.378 0.375 0.373 0.372 0.374 0.373 0.375 0.377 0.381 0.384 0.388 0.394 0.399 0.400 0.407 0.410 0.416 0.421 ANG -24.1 -44.9 -63.1 -79.4 -93.2 -105.3 -115.5 -124.5 -132.5 -140.0 -146.9 -153.3 -159.0 -163.7 -168.7 -173.6 -177.6 178.3 174.2 170.5 167.1 163.7 160.5 157.5 154.4 151.7 149.0 146.7 143.9 141.2 S21 MAG 18.30 16.53 14.68 12.96 11.40 10.11 8.99 8.09 7.35 6.71 6.17 5.70 5.31 4.96 4.65 4.38 4.14 3.92 3.73 3.55 3.39 3.24 3.11 2.98 2.87 2.77 2.67 2.58 2.49 2.42 ANG 161.7 147.1 135.1 125.6 117.8 111.6 106.6 102.2 98.4 95.0 91.9 89.1 86.4 84.0 81.6 79.5 77.4 75.4 73.3 71.4 69.5 67.7 65.9 64.2 62.5 60.8 59.2 57.5 55.9 54.2 S12 MAG 0.0152 0.0357 0.0401 0.0528 0.0531 0.0577 0.0633 0.0680 0.0715 0.0761 0.0796 0.0834 0.0859 0.0901 0.0964 0.1015 0.1052 0.1095 0.1133 0.1198 0.1232 0.1275 0.1326 0.1375 0.1413 0.1469 0.1510 0.1547 0.1614 0.1669 ANG 13.2 69.0 59.3 57.8 54.6 54.0 54.1 53.1 53.8 53.3 53.7 55.3 55.0 55.8 56.5 57.1 56.6 57.3 56.5 56.7 57.2 57.0 57.4 57.9 57.1 57.6 57.0 57.2 56.7 56.0 S22 MAG 0.936 0.859 0.760 0.672 0.599 0.544 0.497 0.460 0.432 0.408 0.391 0.373 0.360 0.349 0.337 0.328 0.319 0.312 0.304 0.302 0.295 0.291 0.285 0.285 0.280 0.278 0.273 0.271 0.268 0.269 ANG -12.7 -23.3 -31.2 -36.3 -40.0 -42.2 -43.7 -44.6 -45.1 -46.0 -46.4 -47.3 -47.8 -48.5 -48.8 -49.9 -50.7 -51.5 -52.5 -53.3 -54.6 -55.9 -57.2 -58.7 -60.3 -61.2 -63.0 -64.5 -66.4 -67.9 Rev.1.00, Apr.14.2003, page 10 of 21 HTT1132E Q1 S Parameter (VCE = 1 V, IC = 10 mA, ZO = 50 ) S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 MAG 0.708 0.633 0.550 0.503 0.461 0.434 0.417 0.407 0.399 0.396 0.391 0.392 0.388 0.391 0.392 0.394 0.397 0.400 0.403 0.407 0.411 0.414 0.420 0.424 0.431 0.434 0.439 0.443 0.448 0.455 ANG -33.6 -61.6 -83.6 -101.2 -115.6 -127.2 -136.3 -144.6 -151.0 -157.7 -163.3 -168.8 -173.4 -177.5 178.2 174.6 171.2 168.0 164.5 161.4 158.3 155.8 153.0 150.6 148.1 145.7 143.2 140.8 138.6 136.3 S21 MAG 23.08 19.73 16.56 13.97 11.88 10.31 9.04 8.05 7.25 6.58 6.02 5.55 5.15 4.80 4.49 4.23 3.99 3.78 3.59 3.42 3.26 3.12 2.98 2.86 2.76 2.65 2.56 2.48 2.39 2.32 ANG 155.8 138.8 126.0 116.8 109.8 104.3 100.0 96.2 92.8 89.9 87.2 84.6 82.3 80.1 77.9 75.9 73.9 72.1 70.1 68.3 66.5 64.8 63.1 61.4 59.8 58.1 56.6 54.9 53.4 51.8 S12 MAG 0.0200 0.0287 0.0324 0.0430 0.0450 0.0531 0.0562 0.0608 0.0630 0.0697 0.0721 0.0788 0.0831 0.0870 0.0930 0.0972 0.1037 0.1062 0.1114 0.1180 0.1229 0.1270 0.1305 0.1386 0.1417 0.1488 0.1522 0.1562 0.1611 0.1688 ANG 74.9 59.0 55.8 59.7 55.2 54.1 54.7 57.9 57.1 58.6 61.5 60.0 61.8 62.0 60.6 61.4 60.7 62.0 61.4 61.2 61.8 61.3 61.8 60.7 61.3 60.9 60.0 60.1 59.6 59.0 S22 MAG 0.905 0.780 0.654 0.570 0.502 0.452 0.418 0.388 0.369 0.352 0.338 0.327 0.316 0.308 0.300 0.293 0.289 0.285 0.276 0.275 0.270 0.269 0.265 0.263 0.258 0.257 0.254 0.254 0.252 0.251 ANG -16.4 -28.2 -35.5 -39.0 -41.1 -42.4 -42.9 -42.7 -43.1 -43.2 -43.4 -43.7 -43.9 -44.8 -45.4 -46.1 -46.9 -48.2 -49.4 -50.4 -51.5 -53.0 -54.5 -56.3 -57.4 -59.0 -60.9 -62.7 -64.5 -66.3 Rev.1.00, Apr.14.2003, page 11 of 21 HTT1132E Q1 S Parameter (VCE = 3 V, IC = 5 mA, ZO = 50 ) S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 MAG 0.862 0.814 0.753 0.692 0.632 0.577 0.531 0.493 0.462 0.436 0.416 0.399 0.387 0.377 0.368 0.364 0.359 0.356 0.354 0.355 0.354 0.354 0.359 0.362 0.365 0.368 0.372 0.377 0.382 0.387 ANG -16.2 -31.2 -45.1 -58.6 -71.2 -82.1 -92.1 -101.3 -109.5 -117.6 -124.6 -131.6 -138.1 -144.3 -150.0 -155.7 -161.2 -165.9 -170.9 -175.2 -179.5 176.4 172.2 168.5 165.1 162.0 158.4 155.3 152.3 149.2 S21 MAG 14.11 13.26 12.28 11.32 10.35 9.47 8.61 7.89 7.26 6.69 6.20 5.77 5.40 5.06 4.76 4.49 4.26 4.04 3.85 3.67 3.51 3.36 3.22 3.09 2.98 2.87 2.77 2.68 2.59 2.51 ANG 166.8 154.8 144.4 135.6 127.7 121.0 115.3 110.3 105.9 102.0 98.5 95.2 92.3 89.5 86.9 84.5 82.1 79.9 77.7 75.6 73.6 71.6 69.7 67.8 66.0 64.2 62.5 60.8 59.2 57.3 S12 MAG 0.0156 0.0316 0.0420 0.0522 0.0603 0.0647 0.0691 0.0738 0.0780 0.0815 0.0854 0.0897 0.0913 0.0946 0.0985 0.1032 0.1062 0.1099 0.1138 0.1171 0.1209 0.1241 0.1290 0.1329 0.1356 0.1392 0.1457 0.1483 0.1558 0.1592 ANG 122.2 77.4 64.4 69.2 56.4 57.1 51.0 52.4 50.3 51.2 50.5 50.7 51.3 51.8 52.8 52.8 51.9 52.9 53.6 52.5 53.2 53.5 53.4 53.3 54.2 53.6 53.3 54.0 53.4 53.9 S22 MAG 0.959 0.917 0.854 0.780 0.714 0.656 0.610 0.567 0.534 0.506 0.479 0.456 0.439 0.422 0.409 0.397 0.386 0.377 0.367 0.361 0.354 0.347 0.340 0.338 0.332 0.327 0.322 0.322 0.315 0.315 ANG -9.0 -17.4 -24.3 -30.0 -34.2 -37.4 -39.8 -41.8 -43.1 -43.9 -44.9 -45.8 -46.4 -47.2 -47.9 -48.9 -49.6 -50.5 -51.4 -52.2 -53.3 -54.4 -55.5 -56.7 -58.0 -58.6 -60.2 -61.5 -62.9 -64.1 Rev.1.00, Apr.14.2003, page 12 of 21 HTT1132E Q1 S Parameter (VCE = 3 V, IC = 10 mA, ZO = 50 ) S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 MAG 0.735 0.659 0.573 0.503 0.445 0.410 0.383 0.362 0.348 0.342 0.332 0.326 0.326 0.323 0.324 0.324 0.326 0.326 0.331 0.333 0.337 0.340 0.345 0.351 0.357 0.359 0.366 0.371 0.375 0.382 ANG -27.1 -49.0 -68.7 -85.0 -99.3 -110.8 -121.0 -129.9 -137.9 -144.9 -151.4 -157.6 -162.9 -168.3 -172.9 -177.3 178.1 174.6 170.6 167.1 163.6 160.4 157.2 154.4 151.6 149.0 146.6 144.2 141.4 138.9 S21 MAG 23.94 21.05 18.08 15.52 13.35 11.66 10.27 9.18 8.29 7.54 6.91 6.38 5.92 5.52 5.17 4.87 4.60 4.35 4.14 3.94 3.76 3.59 3.44 3.30 3.18 3.06 2.95 2.85 2.76 2.67 ANG 159.9 143.8 131.2 121.8 114.4 108.6 104.0 100.1 96.6 93.5 90.7 88.1 85.7 83.6 81.4 79.4 77.4 75.6 73.7 71.9 70.2 68.5 66.8 65.2 63.6 62.0 60.5 59.0 57.4 55.9 S12 MAG 0.0152 0.0244 0.0346 0.0384 0.0446 0.0502 0.0534 0.0603 0.0606 0.0679 0.0742 0.0757 0.0812 0.0873 0.0921 0.0961 0.1001 0.1047 0.1093 0.1158 0.1193 0.1244 0.1278 0.1361 0.1411 0.1442 0.1493 0.1540 0.1577 0.1656 ANG 110.6 74.4 66.6 62.2 59.3 56.3 59.8 59.8 59.3 58.9 60.0 60.5 62.0 61.7 61.3 61.9 62.1 62.3 62.3 62.4 62.7 62.0 61.3 62.0 61.2 61.1 60.7 61.1 60.5 59.3 S22 MAG 0.937 0.823 0.718 0.625 0.557 0.504 0.462 0.431 0.408 0.389 0.372 0.358 0.346 0.336 0.326 0.320 0.314 0.308 0.301 0.297 0.293 0.289 0.284 0.283 0.277 0.276 0.274 0.272 0.267 0.269 ANG -14.4 -25.6 -32.5 -36.9 -39.3 -40.9 -41.8 -42.4 -42.8 -42.9 -43.0 -43.6 -44.0 -44.4 -44.9 -45.8 -46.3 -47.4 -48.3 -49.1 -50.4 -51.5 -52.7 -54.3 -55.8 -57.0 -58.7 -60.0 -61.8 -63.2 Rev.1.00, Apr.14.2003, page 13 of 21 HTT1132E Q2 S Parameter (VCE = 1 V, IC = 3 mA, ZO = 50 ) S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 MAG 0.884 0.845 0.798 0.764 0.745 0.730 0.719 0.714 0.710 0.708 0.704 0.703 0.703 0.704 0.702 0.701 0.704 0.704 0.706 0.707 0.709 0.710 0.713 0.715 0.718 0.720 0.723 0.724 0.727 0.729 ANG -33.1 -61.9 -85.5 -103.7 -117.6 -127.9 -136.5 -143.4 -148.8 -154.2 -158.3 -162.1 -165.4 -168.4 -171.2 -173.7 -176.0 -178.2 179.8 177.7 175.8 174.1 172.5 170.9 169.4 168.1 166.5 165.2 163.9 162.5 S21 MAG 8.94 7.95 6.89 5.94 5.12 4.49 3.96 3.55 3.21 2.93 2.69 2.49 2.32 2.16 2.03 1.92 1.81 1.72 1.64 1.57 1.50 1.44 1.39 1.33 1.29 1.25 1.20 1.17 1.14 1.11 ANG 159.3 142.4 129.0 119.0 111.2 104.9 99.9 95.5 91.7 88.2 85.0 82.1 79.3 76.8 74.4 72.2 70.0 67.9 65.8 63.9 61.9 60.1 58.3 56.7 54.9 53.4 51.9 50.4 48.9 47.4 S12 MAG 0.0353 0.0593 0.0767 0.0818 0.0847 0.0885 0.0904 0.0894 0.0905 0.0894 0.0900 0.0912 0.0892 0.0892 0.0899 0.0914 0.0929 0.0928 0.0942 0.0981 0.1008 0.1043 0.1088 0.1126 0.1208 0.1257 0.1321 0.1396 0.1457 0.1551 ANG 43.6 54.1 51.1 42.8 37.3 34.5 32.5 30.6 31.7 33.1 33.1 36.0 36.1 38.1 40.1 41.7 44.2 47.2 51.1 52.8 56.6 58.7 62.1 63.7 65.4 67.9 71.1 71.6 72.4 73.7 S22 MAG 0.942 0.845 0.743 0.659 0.599 0.556 0.524 0.499 0.481 0.463 0.453 0.444 0.434 0.427 0.423 0.414 0.409 0.407 0.399 0.397 0.393 0.390 0.387 0.385 0.380 0.380 0.374 0.374 0.374 0.371 ANG -11.6 -22.4 -28.9 -32.6 -34.6 -36.0 -36.9 -37.9 -38.6 -39.4 -40.6 -41.9 -43.4 -44.7 -46.3 -48.2 -50.1 -52.1 -54.1 -56.6 -58.8 -61.2 -63.9 -66.6 -69.1 -72.1 -75.0 -78.1 -81.7 -84.8 Rev.1.00, Apr.14.2003, page 14 of 21 HTT1132E Q2 S Parameter (VCE = 1 V, IC = 5 mA, ZO = 50 ) S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 MAG 0.823 0.774 0.719 0.693 0.675 0.668 0.662 0.658 0.659 0.655 0.656 0.654 0.654 0.657 0.655 0.657 0.659 0.660 0.662 0.664 0.667 0.669 0.670 0.675 0.677 0.678 0.683 0.684 0.686 0.690 ANG -42.7 -76.7 -101.2 -118.3 -130.9 -140.1 -147.2 -153.0 -157.5 -161.6 -165.1 -168.3 -171.2 -173.7 -176.0 -178.2 179.9 178.1 176.4 174.6 172.9 171.6 170.0 168.7 167.5 166.1 164.9 163.8 162.5 161.4 S21 MAG 13.89 11.65 9.55 7.92 6.64 5.72 4.99 4.43 3.98 3.62 3.31 3.05 2.83 2.64 2.48 2.33 2.21 2.10 2.00 1.90 1.82 1.75 1.68 1.62 1.56 1.51 1.46 1.41 1.37 1.33 ANG 154.3 135.3 121.9 112.6 105.7 100.3 96.0 92.3 89.0 86.0 83.3 80.8 78.4 76.1 74.0 72.0 70.0 68.2 66.2 64.4 62.6 61.0 59.3 57.7 56.2 54.6 53.1 51.6 50.2 48.8 S12 MAG 0.0263 0.0442 0.0625 0.0649 0.0704 0.0717 0.0744 0.0768 0.0791 0.0799 0.0835 0.0836 0.0871 0.0908 0.0918 0.0981 0.1009 0.1056 0.1071 0.1120 0.1176 0.1228 0.1289 0.1351 0.1414 0.1463 0.1539 0.1616 0.1686 0.1785 ANG 74.7 57.7 42.4 44.0 39.9 39.3 37.8 39.8 41.8 44.5 45.2 46.2 47.8 50.7 52.6 54.2 55.4 58.6 60.2 60.6 63.0 64.5 65.6 66.5 68.3 68.7 69.5 70.4 71.0 71.2 S22 MAG 0.908 0.744 0.623 0.532 0.469 0.426 0.394 0.372 0.357 0.337 0.327 0.318 0.308 0.301 0.295 0.290 0.285 0.281 0.275 0.273 0.267 0.265 0.262 0.260 0.258 0.253 0.255 0.250 0.248 0.249 ANG -18.5 -31.4 -37.6 -40.9 -42.6 -43.5 -43.8 -44.5 -44.6 -45.7 -46.2 -47.3 -48.5 -49.5 -50.9 -52.7 -54.6 -56.4 -58.8 -60.6 -63.1 -65.6 -69.0 -71.3 -74.5 -77.6 -81.2 -83.8 -87.7 -90.9 Rev.1.00, Apr.14.2003, page 15 of 21 HTT1132E Q2 S Parameter (VCE = 1 V, IC = 7 mA, ZO = 50 ) S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 MAG 0.757 0.706 0.664 0.648 0.639 0.631 0.626 0.628 0.629 0.629 0.627 0.627 0.627 0.630 0.630 0.633 0.635 0.637 0.639 0.640 0.641 0.644 0.647 0.651 0.654 0.655 0.658 0.660 0.664 0.666 ANG -49.8 -88.2 -112.6 -128.5 -139.6 -147.7 -153.8 -158.7 -163.0 -166.5 -169.4 -172.2 -174.7 -177.0 -178.7 179.3 177.4 175.8 174.2 172.7 171.4 170.0 168.6 167.4 166.2 165.0 164.1 163.0 161.7 160.8 S21 MAG 18.09 14.39 11.31 9.13 7.57 6.46 5.60 4.96 4.45 4.03 3.68 3.39 3.14 2.93 2.74 2.58 2.44 2.32 2.20 2.10 2.01 1.93 1.85 1.78 1.72 1.66 1.61 1.56 1.51 1.47 ANG 150.1 130.0 117.0 108.5 102.3 97.6 93.8 90.4 87.5 84.8 82.3 79.9 77.8 75.7 73.7 71.9 70.0 68.3 66.5 64.8 63.0 61.4 59.8 58.3 56.9 55.3 53.9 52.5 51.0 49.6 S12 MAG 0.0252 0.0399 0.0469 0.0559 0.0614 0.0630 0.0671 0.0692 0.0723 0.0773 0.0800 0.0847 0.0885 0.0926 0.0958 0.1031 0.1069 0.1112 0.1166 0.1230 0.1284 0.1351 0.1402 0.1467 0.1548 0.1607 0.1674 0.1746 0.1833 0.1911 ANG 99.6 52.6 47.1 45.8 42.4 41.9 45.4 48.0 47.9 50.6 53.0 54.6 56.2 56.8 58.3 59.5 61.2 63.8 63.9 65.0 65.4 66.5 67.4 68.3 68.0 69.5 69.1 69.9 69.8 70.0 S22 MAG 0.858 0.680 0.543 0.446 0.387 0.344 0.315 0.294 0.276 0.263 0.252 0.243 0.235 0.229 0.221 0.217 0.211 0.208 0.203 0.200 0.196 0.193 0.189 0.188 0.187 0.183 0.182 0.180 0.180 0.181 ANG -23.4 -38.0 -44.7 -47.6 -49.2 -49.7 -49.6 -50.0 -49.8 -50.7 -51.5 -52.2 -53.4 -54.5 -56.0 -57.6 -59.6 -62.4 -64.5 -66.6 -69.2 -72.3 -75.3 -78.2 -81.5 -85.1 -88.4 -92.4 -95.7 -99.9 Rev.1.00, Apr.14.2003, page 16 of 21 HTT1132E Q2 S Parameter (VCE = 1 V, IC = 10 mA, ZO = 50 ) S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 MAG 0.687 0.643 0.615 0.606 0.602 0.600 0.599 0.600 0.597 0.601 0.601 0.603 0.605 0.608 0.607 0.612 0.614 0.613 0.616 0.617 0.620 0.623 0.626 0.629 0.633 0.634 0.638 0.640 0.645 0.647 ANG -61.4 -101.9 -125.2 -139.2 -148.6 -155.2 -160.3 -164.4 -167.7 -170.8 -173.4 -175.8 -178.0 -179.9 178.3 176.8 175.1 173.7 172.3 170.9 169.5 168.4 167.1 166.0 165.0 164.1 163.0 162.0 161.0 160.2 S21 MAG 23.30 17.29 13.02 10.28 8.43 7.14 6.18 5.45 4.88 4.41 4.02 3.70 3.43 3.19 2.99 2.81 2.66 2.52 2.40 2.29 2.18 2.09 2.01 1.93 1.86 1.80 1.74 1.69 1.64 1.59 ANG 145.0 124.2 112.2 104.6 99.2 95.0 91.7 88.7 86.0 83.6 81.3 79.2 77.2 75.3 73.5 71.8 70.0 68.4 66.7 65.1 63.4 61.9 60.4 59.0 57.5 56.1 54.7 53.3 52.0 50.5 S12 MAG 0.0300 0.0381 0.0420 0.0534 0.0527 0.0577 0.0618 0.0678 0.0726 0.0765 0.0822 0.0851 0.0930 0.0958 0.1025 0.1103 0.1123 0.1196 0.1262 0.1331 0.1385 0.1451 0.1512 0.1595 0.1662 0.1714 0.1797 0.1866 0.1952 0.2013 ANG 70.7 49.2 44.0 49.1 47.1 50.3 50.9 53.6 56.4 58.8 59.6 60.7 62.6 63.5 63.4 65.2 65.7 66.8 67.5 67.2 68.5 68.2 68.2 68.6 68.5 68.4 68.6 69.0 69.0 68.7 S22 MAG 0.805 0.587 0.451 0.364 0.305 0.273 0.243 0.225 0.209 0.195 0.184 0.175 0.168 0.161 0.154 0.149 0.145 0.142 0.137 0.134 0.131 0.129 0.127 0.126 0.125 0.124 0.123 0.126 0.126 0.128 ANG -29.7 -46.1 -52.5 -55.1 -57.1 -57.4 -58.0 -58.3 -58.4 -59.7 -60.5 -60.9 -62.6 -63.8 -66.1 -68.2 -69.2 -72.3 -75.5 -77.7 -81.7 -84.9 -88.7 -92.9 -97.0 -100.9 -106.0 -110.4 -114.3 -117.6 Rev.1.00, Apr.14.2003, page 17 of 21 HTT1132E Q2 S Parameter (VCE = 3 V, IC = 5 mA, ZO = 50 ) S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 MAG 0.830 0.774 0.711 0.691 0.669 0.658 0.649 0.644 0.641 0.641 0.642 0.640 0.639 0.639 0.641 0.640 0.643 0.642 0.645 0.646 0.649 0.650 0.653 0.657 0.659 0.662 0.664 0.664 0.670 0.670 ANG -38.7 -70.9 -95.8 -113.5 -126.3 -136.0 -143.6 -149.6 -154.8 -158.7 -162.7 -166.0 -169.1 -171.6 -174.0 -176.5 -178.5 179.7 177.7 176.0 174.3 172.8 171.4 169.9 168.6 167.4 166.1 164.8 163.7 162.4 S21 MAG 13.97 11.91 9.90 8.28 7.01 6.07 5.30 4.72 4.25 3.86 3.53 3.26 3.02 2.82 2.65 2.49 2.36 2.24 2.13 2.03 1.94 1.86 1.79 1.72 1.66 1.61 1.56 1.51 1.47 1.42 ANG 156.0 137.7 124.4 114.9 107.8 102.4 98.0 94.3 90.9 87.9 85.2 82.7 80.3 78.1 75.9 74.0 72.0 70.2 68.3 66.5 64.8 63.1 61.4 59.9 58.3 56.9 55.4 53.9 52.6 51.0 S12 MAG 0.0134 0.0420 0.0474 0.0619 0.0615 0.0641 0.0650 0.0676 0.0711 0.0723 0.0746 0.0761 0.0775 0.0817 0.0828 0.0869 0.0891 0.0928 0.0975 0.1025 0.1082 0.1121 0.1170 0.1227 0.1294 0.1347 0.1425 0.1477 0.1575 0.1641 ANG 59.3 58.7 45.9 45.0 41.8 40.0 40.4 41.1 44.8 46.3 47.9 49.2 51.2 52.5 55.1 57.7 59.0 61.4 63.5 64.1 66.3 68.3 69.4 71.0 71.5 73.5 73.7 74.2 74.8 75.8 S22 MAG 0.917 0.785 0.675 0.587 0.531 0.486 0.458 0.437 0.420 0.404 0.393 0.384 0.377 0.369 0.361 0.359 0.354 0.348 0.343 0.339 0.334 0.331 0.324 0.324 0.318 0.315 0.312 0.308 0.306 0.301 ANG -15.0 -26.1 -31.5 -34.0 -35.1 -35.7 -35.5 -35.9 -36.4 -36.6 -36.7 -37.6 -38.6 -39.7 -40.8 -41.8 -43.3 -44.9 -46.7 -48.3 -50.3 -52.3 -54.6 -56.7 -58.8 -61.5 -63.9 -66.4 -69.5 -71.9 Rev.1.00, Apr.14.2003, page 18 of 21 HTT1132E Q2 S Parameter (VCE = 3 V, IC = 10 mA, ZO = 50 ) S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 MAG 0.694 0.640 0.600 0.583 0.582 0.575 0.574 0.574 0.575 0.575 0.574 0.577 0.579 0.580 0.580 0.582 0.585 0.585 0.590 0.591 0.592 0.596 0.599 0.601 0.605 0.610 0.611 0.612 0.616 0.619 ANG -54.3 -94.8 -118.1 -133.3 -143.4 -151.1 -156.9 -161.1 -165.1 -168.2 -171.2 -173.5 -175.9 -177.9 -179.6 178.6 176.8 175.3 173.8 172.4 171.0 169.9 168.7 167.6 166.3 165.6 164.5 163.5 162.4 161.5 S21 MAG 23.74 18.11 13.86 11.04 9.09 7.72 6.68 5.90 5.28 4.78 4.36 4.01 3.72 3.47 3.24 3.05 2.88 2.73 2.60 2.48 2.37 2.27 2.18 2.10 2.02 1.95 1.89 1.83 1.77 1.73 ANG 147.6 127.1 114.7 106.8 101.2 96.9 93.4 90.4 87.7 85.3 83.0 80.9 78.9 77.0 75.2 73.5 71.8 70.2 68.6 67.0 65.3 63.9 62.4 61.0 59.4 58.1 56.8 55.4 54.0 52.7 S12 MAG 0.0310 0.0349 0.0386 0.0416 0.0514 0.0511 0.0562 0.0599 0.0643 0.0691 0.0737 0.0781 0.0820 0.0870 0.0939 0.0979 0.1025 0.1093 0.1142 0.1207 0.1270 0.1325 0.1399 0.1464 0.1509 0.1575 0.1634 0.1714 0.1788 0.1883 ANG 65.3 65.9 52.7 55.9 51.1 54.3 53.6 55.9 57.3 59.0 60.7 63.1 63.6 65.0 65.3 67.5 67.3 68.9 69.5 70.5 70.5 70.7 71.8 71.9 71.8 72.5 72.2 72.4 72.3 72.4 S22 MAG 0.814 0.641 0.503 0.421 0.366 0.331 0.307 0.289 0.273 0.260 0.250 0.241 0.236 0.229 0.223 0.217 0.211 0.208 0.202 0.198 0.195 0.189 0.185 0.181 0.177 0.172 0.170 0.168 0.164 0.161 ANG -25.6 -37.9 -43.2 -44.8 -44.7 -43.9 -43.5 -43.7 -42.9 -43.2 -42.8 -43.4 -43.6 -44.3 -45.3 -46.6 -48.0 -49.1 -50.8 -52.3 -54.2 -56.4 -59.2 -61.7 -65.0 -66.7 -69.7 -72.8 -76.2 -78.7 Rev.1.00, Apr.14.2003, page 19 of 21 HTT1132E Package Dimensions As of January, 2003 Unit: mm 1.2 0.05 (0.1) 6-0.15 -0.05 +0.1 0.15-0.05 +0.1 1.0 0.05 (0.1) 0.8 0.1 (0.4) 0.8 0.1 (0.4) 0.5 Max Package Code JEDEC JEITA Mass (reference value) EMFPAK-6 -- -- 0.0012 g Rev.1.00, Apr.14.2003, page 20 of 21 (0.2) (0.2) HTT1132E Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein. http://www.renesas.com Copyright (c) 2003. Renesas Technology Corporation, All rights reserved. Printed in Japan. Colophon 0.0 Rev.1.00, Apr.14.2003, page 21 of 21 |
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