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Soft Switching Series
IHW30N90T q
Low Loss DuoPack : IGBT in TrenchStop(R) and Fieldstop technology with anti-parallel diode
Features: * 1.1V Forward voltage of antiparallel diode * TrenchStop(R) and Fieldstop technology for 900 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in VCE(sat) * Low EMI 1 * Qualified according to JEDEC for target applications * Application specific optimisation of inverse diode * Pb-free lead plating; RoHS compliant Applications: * Microwave Oven * Soft Switching Applications for ZCS Type IHW30N90T VCE 900V IC 30A VCE(sat),Tj=25C 1.5V Tj,max 175C Marking H30T90 Package PG-TO-247-3-21
C
G
E
PG-TO-247-3-21
Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 150C Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms) Power dissipation, TC = 25C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Ptot Tj Tstg IFpul s VGE ICpul s IF 23 13 36 20 25 428 -40...+175 -55...+175 260 W C C V Symbol VCE IC 60 30 900 90 Value 900 Unit V A
1
J-STD-020 and JESD-022 1 Rev. 2.1 Apr 06
Power Semiconductors
Soft Switching Series
IHW30N90T q
Max. Value 0.35 1.1 40 Unit K/W
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Thermal resistance, junction - ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 5 00 A VCE(sat) V G E = 15 V , I C = 30 A T j =2 5 C T j =1 5 0 C T j =1 7 5 C Diode forward voltage VF V G E = 0V , I F = 1 0 A T j =2 5 C T j =1 5 0 C T j =1 7 5 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 15 0 A , V C E = V G E V C E = 90 0 V, V G E = 0V T j =2 5 C T j =1 5 0 C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Ciss Coss Crss QGate LE V C E = 25 V , V G E = 0V , f= 1 MH z V C C = 72 0 V, I C =3 0 A V G E = 15 V 13 nH 2617 96 38 280 nC pF IGES gfs V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 20 A 26 250 2500 600 nA S 4.6 1.1 1.0 1.0 5.3 1.3 6 A 1.5 1.7 1.8 1.7 900 V Symbol Conditions Value min. Typ. max. Unit RthJA RthJCD RthJC Symbol Conditions
Power Semiconductors
2
Rev. 2.1
Apr 06
Soft Switching Series
IHW30N90T q
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =2 5 C , V C C = 60 0 V, I C = 3 0 A, V G E = 0/ 15 V , R G = 15 , 45 26 556 29 1.8 1.8 mJ ns Symbol Conditions Value min. Typ. max. Unit
Switching Characteristic, Inductive Load, at Tj=175 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =1 7 5 C V C C = 60 0 V, I C = 30 A , V G E = 0/ 15 V , R G = 1 5 44 38 650 41 2.4 2.4 mJ ns Symbol Conditions Value min. Typ. max. Unit
Power Semiconductors
3
Rev. 2.1
Apr 06
Soft Switching Series
IHW30N90T q
tp=1s
80A
10s
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
TC=80C 60A TC=110C 40A
10A
20s 50s 200s 1ms
Ic
20A
1A DC
0A 100Hz
1kHz
10kHz
100kHz
1V
10V
100V
1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency for triangular current (Eon = 0, hard turn-off) (Tj 175C, D = 0.5, VCE = 600V, VGE = 0/+15V, RG = 15)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. IGBT Safe operating area (D = 0, TC = 25C, Tj 175C;VGE=15V)
400W 350W 300W 250W 200W 150W 100W 50W 0W 25C
50A
IC, COLLECTOR CURRENT
Ptot, DISSIPATED POWER
40A
30A
20A
10A
50C
75C
100C
125C
150C
0A 25C
75C
125C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 175C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 175C)
Power Semiconductors
4
Rev. 2.1
Apr 06
Soft Switching Series
IHW30N90T q
80A 70A
VGE=20V 15V
80A 70A
VGE=20V 15V 13V 11V 9V 7V
IC, COLLECTOR CURRENT
60A 50A 40A 30A 20A 10A 0A 0V
IC, COLLECTOR CURRENT
2V 3V
13V 11V 9V 7V
60A 50A 40A 30A 20A 10A
1V
0A 0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175C)
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
60A
IC=60A 2.0V
IC, COLLECTOR CURRENT
50A 40A 30A 20A 10A 0A 0V 2V 4V 6V 8V TJ=175C 25C
1.5V
IC=30A
1.0V
IC=15A
0.5V
0.0V -50C
0C
50C
100C
150C
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V)
TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
Power Semiconductors
5
Rev. 2.1
Apr 06
Soft Switching Series
IHW30N90T q
1000ns td(off)
1s
td(off)
t, SWITCHING TIMES
t, SWITCHING TIMES
100ns
tf 100ns td(on)
td(on)
tf tr 10ns 0A 10A 20A 30A 40A 50A
10 20 30 40 50
tr
60
70
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175C, VCE=600V, VGE=0/15V, RG=15, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=175C, VCE=600V, VGE=0/15V, IC=30A, Dynamic test circuit in Figure E)
td(off)
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
7V
t, SWITCHING TIMES
6V
100ns tf td(on) tr 10ns
5V
max. typ.
4V
3V min. 2V -50C 0C 50C 100C 150C
0C
50C
100C
150C
TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=30A, RG=15, Dynamic test circuit in Figure E)
TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.3mA)
Power Semiconductors
6
Rev. 2.1
Apr 06
Soft Switching Series
IHW30N90T q
5mJ
6 mJ
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
Eoff 5 mJ 4 mJ 3 mJ 2 mJ 1 mJ 0 mJ
4mJ
3mJ
Eoff
2mJ
1mJ
0mJ 10A 20A 30A 40A 50A
10
20
30
40
50
60
70
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=175C, VCE=600V, VGE=0/15V, RG=15, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=175C, VCE=600V, VGE=0/15V, IC=30A, Dynamic test circuit in Figure E)
3.0mJ
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
2.0mJ E off 1.5mJ
2.5mJ 2.0mJ 1.5mJ 1.0mJ 0.5mJ Eoff
1.0mJ
0.5mJ
0.0mJ
50C
100C
150C
0.0mJ 400V
500V
600V
700V
800V
TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=30A, RG=15, Dynamic test circuit in Figure E)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ=175C, VGE=0/15V, IC=30A, RG=15, Dynamic test circuit in Figure E)
Power Semiconductors
7
Rev. 2.1
Apr 06
Soft Switching Series
IHW30N90T q
Ciss 1nF
VGE, GATE-EMITTER VOLTAGE
180V 720V
c, CAPACITANCE
10V
100pF
Coss
5V
Crss
0V
10pF
0nC 50nC 100nC 150nC 200nC 250nC
0V
10V
20V
QGE, GATE CHARGE Figure 17. Typical gate charge (IC=30 A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz)
ZthJC, TRANSIENT THERMAL RESISTANCE
D=0.5
ZthJC, TRANSIENT THERMAL RESISTANCE
10 K/W D=0.5
0
10 K/W
-1
0.2 0.1 0.05 0.02 0.01 single pulse
C 1 = 1 /R 1 C 2 = 2 /R 2
R,(K/W) 0.1271 0.1098 0.0869 0.0262
R1
, (s) 5.93*10-2 6.99*10-3 5.93*10-4 5.54*10-5
R2
0.2 0.1 10 K/W
-1
0.05 0.02 0.01 single pulse
R,(K/W) 0.0715 0.2222 0.4265 0.364 0.0181
R1
, (s) 9.45*10-2 2.55*10-2 3.6*10-3 5.1*10-4 1.09*10-4
R2
C 1 = 1 /R 1
C 2 = 2 /R 2
10 K/W 10s
-2
100s
1ms
10ms
100ms
10s
100s
1ms
10ms
100ms
tP, PULSE WIDTH Figure 19. IGBT transient thermal resistance (D = tp / T)
tP, PULSE WIDTH Figure 20. Typical Diode transient thermal impedance as a function of pulse width (D=tP/T)
Power Semiconductors
8
Rev. 2.1
Apr 06
Soft Switching Series
IHW30N90T q
TJ=25C 30A 175C
IF=20A 10A
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
1.0V 3A
20A
0.5V
10A
0A
0.0V
0.5V
1.0V
1.5V
0.0V -50C
0C
50C
100C
150C
VF, FORWARD VOLTAGE Figure 21. Typical diode forward current as a function of forward voltage
TJ, JUNCTION TEMPERATURE Figure 22. Typical diode forward voltage as a function of junction temperature
Power Semiconductors
9
Rev. 2.1
Apr 06
Soft Switching Series
IHW30N90T q
PG-TO247-3-21
Power Semiconductors
10
Rev. 2.1
Apr 06
Soft Switching Series
IHW30N90T q
diF /dt tr r =tS +tF Qr r =QS +QF IF tS QS tr r tF 10% Ir r m t VR
i,v
Ir r m
QF
dir r /dt 90% Ir r m
Figure C. Definition of diodes switching characteristics
1
Tj (t) p(t)
r1
r2
2
n
rn
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent circuit
Figure B. Definition of switching losses
Power Semiconductors
11
Rev. 2.1
Apr 06
Soft Switching Series
IHW30N90T q
Edition 2006-01 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 5/31/06. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Power Semiconductors
12
Rev. 2.1
Apr 06

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