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Soft Switching Series
IHW40N60T q
C
Low Loss DuoPack : IGBT in TrenchStop(R) -technology with anti-parallel diode
Features: * Very low VCE(sat) 1.5 V (typ.) * Maximum Junction Temperature 175 C * Short circuit withstand time - 5s * TrenchStop(R) and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCE(sat) * Positive temperature coefficient in VCE(sat) * Low EMI * Low Gate Charge 1 * Qualified according to JEDEC for target applications * Pb-free lead plating; RoHS compliant * Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Applications: * Inductive Cooking * Soft Switching Applications Type IHW40N60T VCE 600V IC 40A VCE(sat),Tj=25C 1.55V Tj,max 175C Marking H40T60 Package PG-TO-247-3-21
G
E
PG-TO-247-3-21
Maximum Ratings Parameter Collector-emitter voltage DC collector current, limited by Tjmax TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area (VCE 600V, Tj 175C) Diode forward current, limited by Tjmax TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms) Short circuit withstand time
2)
Symbol VCE IC
Value 600 80 40
Unit V A
ICpul s IF
120 120 40 20
IFpul s VGE tSC Ptot Tj Tstg -
60 20 25 5 303 -40...+175 -55...+175 260 s W C V
VGE = 15V, VCC 400V, Tj 150C Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s
1 2)
J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.2 Apr. 06
Power Semiconductors
Soft Switching Series
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Thermal resistance, junction - ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 0 .5m A VCE(sat) V G E = 15 V , I C = 40 A T j =2 5 C T j =1 7 5 C Diode forward voltage VF V G E = 0V , I F = 2 0 A T j =2 5 C T j =1 7 5 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 0. 8m A, VCE=VGE V C E = 60 0 V, V G E = 0V T j =2 5 C T j =1 7 5 C Gate-emitter leakage current Transconductance Integrated gate resistor Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Ciss Coss Crss QGate LE V C E = 25 V , V G E = 0V , f= 1 MH z V C C = 48 0 V, I C =4 0 A V G E = 15 V IGES gfs RGint V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 40 A 4.1 600 Symbol Conditions RthJA RthJCD RthJC Symbol Conditions
IHW40N60T q
Max. Value 0.49 0.76 40 Unit K/W
Value min. Typ. 1.55 1.9 1.1 1.05 4.9 max. 2.05 5.7
Unit
V
A 22 40 1000 100 nA S
2423 113 72 215 13
-
pF
nC nH
Power Semiconductors
2
Rev. 2.2 Apr. 06
Soft Switching Series
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =2 5 C , V C C = 40 0 V, I C = 4 0 A, V G E = 0/ 15 V , R G = 5. 6 , 1) L =4 0 nH , 1) C = 3 0p F Energy losses include "tail" and diode reverse recovery. Symbol Conditions
IHW40N60T q
Value min. Typ. 186 66.3 0.92 0.92 max. mJ Unit
ns
Switching Characteristic, Inductive Load, at Tj=175 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =1 7 5 C, V C C = 40 0 V, I C = 4 0 A, V G E = 0/ 15 V , R G = 5 .6 1) L =4 0 nH , 1) C = 3 0p F Energy losses include "tail" and diode reverse recovery. 196 76.5 1.4 1.4 mJ ns Symbol Conditions Value min. Typ. max. Unit
1)
Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E. 3 Rev. 2.2 Apr. 06
Power Semiconductors
Soft Switching Series
IHW40N60T q
140A
100A
120A
tp=1s
IC, COLLECTOR CURRENT
100A 80A 60A 40A 20A 0A 10Hz TC=80C TC=110C
IC, COLLECTOR CURRENT
2s
10A
10s 50s
Ic
1A
DC
1ms 10ms
100Hz
1kHz
10kHz
100kHz
1V
10V
100V
1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency for triangular current (Eon = 0, hard turn-off) (Tj 175C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 5.6)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C; VGE=15V)
350W 300W
60A
250W 200W 150W 100W 50W 0W 25C
IC, COLLECTOR CURRENT
50C 75C 100C 125C 150C
Ptot, POWER DISSIPATION
40A
20A
0A 25C
75C
125C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 175C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 175C)
Power Semiconductors
4
Rev. 2.2 Apr. 06
Soft Switching Series
IHW40N60T q
100A
VGE=20V
100A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
80A
15V 13V 11V 9V 7V
VGE=20V 80A 15V 13V 60A 11V 9V 40A 7V
60A
40A
20A
20A
0A 0V 1V 2V 3V
0A 0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175C)
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE
100A
2.5V
IC=80A
IC, COLLECTOR CURRENT
80A
2.0V IC=40A
60A
1.5V
40A TJ =175C 20A 25C
1.0V
IC=20A
0.5V
0A
0V
2V
4V
6V
8V
10V
0.0V 0C 50C 100C 150C
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V)
TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
Power Semiconductors
5
Rev. 2.2 Apr. 06
Soft Switching Series
IHW40N60T q
td(off)
td(off)
t, SWITCHING TIMES
100ns
tf
t, SWITCHING TIMES
100ns
tf
10ns
10ns
0A
20A
40A
60A
10
20
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175C, VCE = 400V, VGE = 0/15V, RG = 5.6, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ = 175C, VCE= 400V, VGE = 0/15V, IC = 40A, Dynamic test circuit in Figure E)
6V
td(off)
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE
max. 5V typ.
t, SWITCHING TIMES
100ns tf
min. 4V
3V
10ns 25C
50C
75C
100C
125C
150C
25C
50C
75C
100C 125C 150C
TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 40A, RG=5.6, Dynamic test circuit in Figure E)
TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.8mA)
Power Semiconductors
6
Rev. 2.2 Apr. 06
Soft Switching Series
IHW40N60T q
2.5mJ
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
2.0mJ Eoff 1.5mJ
2.0mJ
Eoff
1.5mJ
1.0mJ
1.0mJ
0.5mJ
0.5mJ
0.0mJ
0.0mJ
0A 10A 20A 30A 40A 50A 60A 70A
0 10 20
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ = 175C, VCE = 400V, VGE = 0/15V, RG = 5.6, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ = 175C, VCE = 400V, VGE = 0/15V, IC = 40A, Dynamic test circuit in Figure E)
1.4mJ
E, SWITCHING ENERGY LOSSES
Eoff
E, SWITCHING ENERGY LOSSES
1.2mJ 1.0mJ 0.8mJ 0.6mJ 0.4mJ 0.2mJ 0.0mJ 25C
1.5mJ Eoff
1.0mJ
0.5mJ
50C
75C
100C 125C 150C
0.0mJ 300V
350V
400V
450V
TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 40A, RG = 5.6, Dynamic test circuit in Figure E)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175C, VGE = 0/15V, IC = 40A, RG = 5.6, Dynamic test circuit in Figure E)
Power Semiconductors
7
Rev. 2.2 Apr. 06
Soft Switching Series
IHW40N60T q
Ciss
VGE, GATE-EMITTER VOLTAGE
12V 120V 9V 480V
1nF
6V
c, CAPACITANCE
100pF
3V
Coss
Crss
0V
0nC 30nC 60nC 90nC 120nC150nC180nC210nC
0V
10V
20V
30V
40V
QGE, GATE CHARGE Figure 17. Typical gate charge (IC=40 A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz)
ZthJC, TRANSIENT THERMAL RESISTANCE
ZthJC, TRANSIENT THERMAL RESISTANCE
D=0.5
D=0.5
0.2 10 K/W 0.1 0.05 0.02 0.01 single pulse 1s 10s 100s
-1
0.2 10 K/W
-1
R,(K/W) 0.093 0.119 0.0828 0.0386 0.0221
R1
, (s) 8.74*10-2 1.07*10-2 7.49*10-4 8.85*10-5 7.39*10-6
R2
0.1
0.05 0.02 0.01 single pulse
R,(K/W) 0.151 0.223 0.273 0.111
R1
, (s) 1.26*10-1 9.7*10-3 1.4*10-3 1.51*10-4
R2
10 K/W
-2
C 1 = 1 /R 1
C 2 = 2 /R 2
C 1 = 1 /R 1
C 2 = 2 /R 2
1ms
10ms 100ms
10 K/W 10s
-2
100s
1ms
10ms
100ms
tP, PULSE WIDTH Figure 19. IGBT transient thermal resistance (D = tp / T)
tP, PULSE WIDTH Figure 20. Diode transient thermal impedance as a function of pulse width (D=tP/T)
Power Semiconductors
8
Rev. 2.2 Apr. 06
Soft Switching Series
IHW40N60T q
IF=40A
70A 60A TJ=25C
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
175C 50A 40A 30A 20A 10A 0A
1.0V
20A 10A
0.5V
0.0V
0.5V
1.0V
1.5V
0.0V 25C
50C
75C
100C 125C 150C
VF, FORWARD VOLTAGE Figure 21. Typical diode forward current as a function of forward voltage
TJ, JUNCTION TEMPERATURE Figure 22. Typical diode forward voltage as a function of junction temperature
Power Semiconductors
9
Rev. 2.2 Apr. 06
Soft Switching Series
IHW40N60T q
PG-TO247-3-21
Power Semiconductors
10
Rev. 2.2 Apr. 06
Soft Switching Series
i,v diF /dt
IHW40N60T q
tr r =tS +tF Qr r =QS +QF tr r
IF
tS QS
tF 10% Ir r m t VR
Ir r m
QF
dir r /dt 90% Ir r m
Figure C. Definition of diodes switching characteristics
1
Tj (t) p(t)
r1
r2
2
n
rn
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Power Semiconductors
11
Rev. 2.2 Apr. 06
Soft Switching Series
IHW40N60T q
Edition 2006-01 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 5/31/06. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Power Semiconductors
12
Rev. 2.2 Apr. 06

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