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IPB051NE8N G
IPI05CNE8N G IPP054NE8N G
OptiMOS(R)2 Power-Transistor
Features * N-channel, normal level * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance R DS(on) * 175 C operating temperature * Pb-free lead plating; RoHS compliant * Qualified according to JEDEC1) for target application
Product Summary V DS R DS(on),max (TO 263) ID 85 5.1 100 V m A
* Ideal for high-frequency switching and synchronous rectification Type IPB051NE8N G IPI05CNE8N G IPP054NE8N G
Package Marking
PG-TO263-3 051NE8N
PG-TO262-3 05CNE8N
PG-TO220-3 054NE8N
Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C2) T C=100 C Pulsed drain current3) Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage 4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 C T C=25 C I D=100 A, R GS=25 I D=100 A, V DS=68 V, di /dt =100 A/s, T j,max=175 C Value 100 100 400 826 6 20 300 -55 ... 175 55/175/56 mJ kV/s V W C Unit A
Rev. 1.04
page 1
2006-02-17
IPB051NE8N G
IPI05CNE8N G IPP054NE8N G
Parameter
Symbol Conditions min.
Values typ. max.
Unit
Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA minimal footprint 6 cm2 cooling area5) 0.5 62 40 K/W
Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=250 A V DS=68 V, V GS=0 V, T j=25 C V DS=68 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=100 A, TO220, TO262 V GS=10 V, I D=100 A, TO263 Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=100 A 85 2 3 0.1 4 1 A V
-
10 1 4.1
100 100 5.4 nA m
81
3.8 1.8 162
5.1 S
1) 2)
J-STD20 and JESD22 Current is limited by bondwire; with an R thJC=0.5 K/W the chip is able to carry 161 A. See figure 3 Tjmax=150 C and duty cycle D=0.01 for V gs<-5V
3) 4) 5)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air.
Rev. 1.04
page 2
2006-02-17
IPB051NE8N G
IPI05CNE8N G IPP054NE8N G
Parameter
Symbol Conditions min.
Values typ. max.
Unit
Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics6) Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge
6)
C iss C oss C rss t d(on) tr t d(off) tf V DD=40 V, V GS=10 V, I D=50 A, R G=1.6 V GS=0 V, V DS=40 V, f =1 MHz
-
9090 1710 120 28 42 64 21
12100 pF 2270 180 42 61 96 31 ns
Q gs Q gd Q sw Qg V plateau Q oss V DD=40 V, V GS=0 V V DD=40 V, I D=100 A, V GS=0 to 10 V
-
47 31 50 135 5.1 130
62 46 72 180 173
nC
V nC
IS I S,pulse V SD t rr Q rr
T C=25 C V GS=0 V, I F=100 A, T j=25 C V R=40 V, I F=I S, di F/dt =100 A/s
-
1.0 110 345
100 400 1.2 -
A
V ns nC
See figure 16 for gate charge parameter definition
Rev. 1.04
page 3
2006-02-17
IPB051NE8N G
IPI05CNE8N G IPP054NE8N G
1 Power dissipation P tot=f(T C)
2 Drain current I D=f(T C); V GS10 V
350
120
300
100
250 80
P tot [W]
200
I D [A]
0 50 100 150 200
60
150
40 100 20
50
0
0 0 50 100 150 200
T C [C]
T C [C]
3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p
1000
1 s 10 s
4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T
100
0.5 100 s
100
1 ms
10-1
0.2 0.1 0.05 0.02 0.01
I D [A]
10 ms
DC
Z thJC [K/W]
10
10-2
single pulse
1 0.1 1 10 100
10-3 10-5 10-4 10-3 10-2 10-1 100
V DS [V]
t p [s]
Rev. 1.04
page 4
2006-02-17
IPB051NE8N G
IPI05CNE8N G IPP054NE8N G
5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS
400
8V 10 V 7V 6.5 V
6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS
15
320
12
4.5 V
6V
R DS(on) [m]
240
9
5V
I D [A]
5.5 V
160
5.5 V
6
6V 10 V
80
5V
3
4.5 V
0 0 1 2 3 4 5
0 0 50 100 150
V DS [V]
I D [A]
7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j
300
8 Typ. forward transconductance g fs=f(I D); T j=25 C
200
250 160 200 120 150
g fs [S]
80
175 C 25 C
I D [A]
100
50
40
0 0 2 4 6 8
0 0 50 100 150
V GS [V]
I D [A]
Rev. 1.04
page 5
2006-02-17
IPB051NE8N G
IPI05CNE8N G IPP054NE8N G
9 Drain-source on-state resistance R DS(on)=f(T j); I D=100 A; V GS=10 V
10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D
12
4 3.5 3
2500 A
10
8
R DS(on) [m]
2.5
98 %
250 A
6
typ
V GS(th) [V]
100 140 180
2 1.5 1
4
2 0.5 0 -60 -20 20 60 0 -60 -20 20 60 100 140 180
T j [C]
T j [C]
11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz
12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j
105
103
104
Ciss Coss
25 C
175 C
175 C, 98%
10
2
C [pF]
I F [A]
103
Crss
25 C, 98%
101 102
101 0 20 40 60 80
100 0 0.5 1 1.5 2
V DS [V]
V SD [V]
Rev. 1.04
page 6
2006-02-17
IPB051NE8N G
IPI05CNE8N G IPP054NE8N G
13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start)
1000
14 Typ. gate charge V GS=f(Q gate); I D=100 A pulsed parameter: V DD
12
10
20 V
40 V
60 V
100
100 C 25 C
8
150 C
V GS [V]
1000
I AS [A]
6
10
4
2
1 1 10 100
0 0 50 100 150
t AV [s]
Q gate [nC]
15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA
16 Gate charge waveforms
100
V GS
Qg
95
V BR(DSS) [V]
90
85
V g s(th)
80
Q g (th) Q gs
-60 -20 20 60 100 140 180
Q sw Q gd
Q gate
75
T j [C]
Rev. 1.04
page 7
2006-02-17
IPB051NE8N G
IPI05CNE8N G IPP054NE8N G
PG-TO220-3: Outline
Rev. 1.04
page 8
2006-02-17
IPB051NE8N G
IPI05CNE8N G IPP054NE8N G
Rev. 1.04
page 9
2006-02-17
IPB051NE8N G
IPI05CNE8N G IPP054NE8N G
Rev. 1.04
page 10
2006-02-17
IPB051NE8N G
IPI05CNE8N G IPP054NE8N G
Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.04
page 11
2006-02-17

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