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 QL65F6SA
InGaAlP Laser Diode
2003 Rev 0
OVERVIEW
QL65F6SA is a MOCVD grown 650 nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 10mW and low operating current for optoelectronic devices such as Optical Pick-up & Bar Code Reader.
APPLICATION
- Optical Pick-up - Bar Code Reader - Laser Module
FEATURES
- Visible Light Output: p = 650 nm - Optical Power Output: 10 mW CW - Package Type : TO-18 (5.6 mm) - Built-in Photo Diode for Monitoring Laser Diode
ELECTRICAL CONNECTION
Bottom View
Pin Configuration
ABSOLUTE MAXIMUM RATING at Tc=25C
Items
Optical Output Power Laser Diode Reverse Voltage Photo Diode Reverse Voltage Operating Temperature Storage Temperature
Symbols P V V Topr Tstg
Values 10 2 30 -10 ~ +60 -40 ~ +85
Unit mW V V C C
ELECTRICAL and OPTICAL CHARACTERISTICS at Tc=25C
Items
Optical Output Power Threshold Current Operating Current Operating Voltage Lasing Wavelength
Symbols
Po Ith Iop Vop
Min.
645 6 24 0.1 -
Typ. Max.
10 40 60 2.3 655 9 28 0.2 50 80 2.6 660 12 35 1.5 2.5 0.5 60
Unit
mW mA mA V nm deg deg deg deg mA m
Condition
Po = 10 mW Po = 10 mW Po = 10 mW Po = 10 mW Po = 10 mW Po = 10 mW Po = 10 mW Po = 10 mW
p

Beam Divergence

Beam Angle

Im
Monitor Current Optical Distance
X, Y, Z
NOTICE : QL65F6SA to be operated on APC circuit. The above product specifications are subject to change without notice.
PACKAGE DIMENSION
ROITHNER LASERTECHNIK, A-1040 Vienna, Austria, Schoenbrunner Strasse 7 Tel.: +43-1-586 52 43 - 0, Fax.: +43-1-586 52 43 44 e-mail: office@roithner-laser.com, http://www.roithner-laser.com


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