 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| WT-2307 Surface Mount P-Channel Enhancement Mode MOSFET 1 3 DRAIN DRAIN CURRENT - 3 AMPERES DRAIN SOURCE VOLTAGE - 20 VOLTAGE 2 SOURCE Features: *Super high dense cell design for low RDS(ON) R DS(ON) <80 m @VGS =-4.5V R DS(ON) <100 m @V GS =-2.5V *Rugged and Reliable *SOT-23 Package GATE 3 1 2 SOT-23 Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =125 C) (1) Pulsed Drain Current (2) Drain-Source Diode Forward Current (1) Power Dissipation (1) Maximax Junction-to-Ambient Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD R JA TJ, Tstg Value -20 Unite V V A A A W C/W C + -12 -3 -11 -1.25 1.25 100 -55 to 150 Device Marking WT2307=S07 WEITRON http://www.weitron.com.tw WT-2307 Electrical Characteristics Characteristic (TA=25 C Unless otherwise noted) Symbol V(BR)DSS VGS (th) IGSS IDSS Min Typ Max Unit Static (2) Drain-Source Breakdown Voltage VGS=0V, ID=-250 uA Gate-Source Threshold Voltage VDS=VGS, ID=-250 uA Gate-Source Leakage Current + VDS=0V, VGS=-10V Zero Gate Voltage Drain Current VDS=-16V, VGS=0V Drain-Source On-Resistance VGS=-4.5V, ID=-4.0A VGS=-2.5V, ID=-2.0A On-State Drain Current VDS=-5V, VGS=-4.5A Forward Transconductance VDS=-5V, ID=-5A -20 -0.5 -0.8 -1.5 + -100 1 80 100 V V nA uA m -15 4 rDS (on) 70 85 ID(on) gfs - - A S Dynamic (3) Input Capacitance VDS=-15V, VGS=0V, f=1MHZ Output Capacitance VDS=-15V, VGS=0V, f=1MHZ Reverse Transfer Capacitance VDS=-15V, VGS=0V, f=1MHZ Ciss Coss Crss - 586 101 59 PF Switching (3) Turn-On Time VGS =-4.5V,VDD =-10V, I D =-1A, R L =10 ,RGEN =6 Rise Time VGS =-4.5V,VDD =-10V, I D =-1A, R L =10 ,RGEN =6 Turn-Off Time VGS =-4.5V,VDD =-10V, I D =-1A, R L =10 ,RGEN =6 Fall Time VGS =-4.5V,VDD =-10V, I D =-1A, R L =10 ,RGEN =6 Total Gate Charge VDS=-10V, ID=-3A, V GS =-4.5V Gate-Source Charge VDS=-10V, ID=-3A, V GS =-4.5V Gate-Drain Charge VDS=-10V, ID=-3A, V GS =-4.5V Drain-Source Diode Forward Voltage VDS=0V, IS=-1.25A Note: 1. Surface Mounted on FR4 Board t < 10sec. _ < 300us, Duty Cycle < 2%. _ _ 2. Pulse Test : PW 2. Guaranteed by Design, not Subject to Production Testing. td(on) tr td(off ) tf Qg Qgs Qgd - 6.5 32.1 58.4 48 5.92 1.36 1.4 -1.815 - nS nS nS nS nc nc nc V - -1.2 VSD WEITRON http://www.weitron.com.tw WT-2307 Typical Electrical Characteristics 10 -VGS =2.5V -ID , DRAIN CURRENT(A) -ID , DRAIN CURRENT(A) 25 25 C -55 C 8 -VGS =10.5~3.5V 6 20 Tj =125 C 15 4 -VGS =1.5V 2 10 5 0 0 0 4 6 8 10 12 -VDS , DRAIN-TO-SOURCE VOLTAGE(V) 0.0 0.5 1 1.5 2 2.5 3 -VGS , GATE-TO-SOURCE VOLTAGE(V) FIG.1 Output Characteristics FIG.2 Transfer Characteristics 1000 R DS(ON) , ON-RESISTANCE(OHMS) 2.2 1.8 1.4 1.0 0.6 0.2 0 -VGS =-4.5V I D =-4A -C ,CAPACITANCE( P F) 800 Ciss 600 400 200 Coss 0 Crss 0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 -VGS , GATE-TO-SOURCE VOLTAGE(V) Tj ( C) FIG.3 Capacitance FIG.4 On-Resistance Variation with Temperature WEITRON http://www.weitron.com.tw WT-2307 GATE-SOURCE THRESHOLD VOLTAGE DRAIN-SOURCE BREAKDOWN VOLTAGE 1.3 1.2 1.1 BVDSS ,NORMALIZED VDS =VGS ID =250uA 1.10 ID =250uA 1.07 1.04 1.00 0.97 0.94 0.91 -50 -25 0 25 50 75 100 125 Vth ,NORMALIZED 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 T j ,JUNCTION TEMPERATURE( C) T j ,JUNCTION TEMPERATURE( C) FIG.5 with Temperature FIG.6 Breakdown Voltage Variation with Temperature 20 10 10 8 6 4 2 0 0 5 10 15 VDS =-5V 20 25 IS ,SOURCE-DRAIN CURRENT(A) gFS ,TRANSCONDUCTANCE(S) 12 2 0 0.8 1.0 1.2 1.4 TJ=25 C 1.6 1.8 IDS ,DRAIN-SOURCE CURRENT(A) V SD ,BODY DIODE FORWARD VOLTAGE(V) FIG.7 Transconductance Variation with Drain Current FIG.8 Body Diode Forward Voltage Variation with Source Current 50 -ID , DRAIN CURRENT(A) -VGS ,GATE TO SOURCE VOLTAGE(V) 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 Q g ,TOTAL GATE CHARGE(nC) VDS =10V ID =3A 10 R (ON DS )Li mit 10 10 0m s 0m s 11 DC Is 0.1 0.03 VDS=-4.5V Single Pulse TC =25 C 0.1 1 10 20 50 VDS ,DRAIN-SOURCE CURRENT(V) FIG.9 Gate Charge FIG.10 Maximum Safe Operating Area WEITRON http://www.weitron.com.tw WT-2307 V DD ton td(on) V IN D VG S R GE N G V IN S 10% 90% 50% 50% toff tr 90% 5 td(off) 90% 10% tf RL V OUT V OUT 10% INVE R TE D P ULS E WIDTH FIG.11 Switching Test Circuit FIG.12 Switching Waveforms 10 NORMALIZED TRANSIENT THERMAL RESISTANCE 1 0.5 0.2 P DM t1 t2 0.1 0.1 0.05 0.02 on 0.01 Single Pulse 0.01 0.00001 1. Rthja (t)=r (t) * R thja 2. Rth ja=See Datasheet 3. Tjm-TA = Pdm* R th ja (t) 4. Duty Cycle, D=t1/t2 10 100 1000 0.0001 0.001 0.01 0.1 1 SQUARE WAVE PULSE DURATION(SEC) NORMALIZED THERMAL TRANSIENT IMPEDANCE CUREVE WEITRON http://www.weitron.com.tw WT-2307 SOT-23 Package Outline Dimensions Unit:mm A T OP V IE W B C E G H D K J L M Dim Min Max A 0.35 0.51 B 1.19 1.40 C 2.10 3.00 D 0.85 1.05 E 0.46 1.00 G 1.70 2.10 H 2.70 3.10 J 0.01 0.13 K 0.89 1.10 L 0.30 0.61 M 0.076 0.25 WEITRON http://www.weitron.com.tw |
Price & Availability of WT2307
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |