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| MICROWAVE CORPORATION v00.0303 HMC322 Features Broadband Performance: DC - 10.0 GHz High Isolation: >38 dB@ 4 GHz Low Insertion Loss: 2.0 dB@ 4 GHz Integrated 3:8 TTL Decoder Small Size: 1.45 mm x 1.6 mm x 0.10 mm GaAs MMIC SP8T NON-REFLECTIVE SWITCH, DC - 10.0 GHz Typical Applications The HMC322 is ideal for: * Telecom Infrastructure * Microwave Radio & VSAT * Military & Space * Test Instrumentation Functional Diagram General Description The HMC322 is a broadband non-reflective GaAs MESFET SP8T switch chip. Covering DC to 10.0 GHz, this switch offers high isolation and low insertion loss and extends the frequency coverage of Hittite's SP8T switch product line. This switch also includes an on board binary decoder circuit which reduces the required logic control lines to three. The switch operates using a negative control voltage of 0/-5V, and requires a fixed bias of -5V. All data is tested with the chip in a 50 Ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of 0.5 mm (20 mils) length. 7 SWITCHES - CHIP Electrical Specifications, TA = +25 C, With 0/-5V Control, Vee= -5V, 50 Ohm System Parameter Frequency DC - 2.0 GHz DC - 4.0 GHz DC - 6.0 GHz DC - 8.0 GHz DC - 10.0 GHz DC - 2.0 GHz DC - 4.0 GHz DC - 6.0 GHz DC - 8.0 GHz DC - 10.0 GHz "On State" "Off State" DC - 10.0 GHz DC - 10.0 GHz 0.5 - 10.0 GHz 0.5 - 10.0 GHz DC - 10.0 GHz 50 150 ns ns 19 34 40 32 27 20 18 Min. Typ. 1.9 2.0 2.1 2.2 2.4 46 38 32 26 24 14 11 23 38 Max. 2.3 2.4 2.5 2.6 2.8 Units dB dB dB dB dB dB dB dB dB dB dB dB dBm dBm Insertion Loss Isolation (RFC to RF1 - 8) Return Loss Return Loss Input Power for 1 dB Compression Input Third Order Intercept (Two-Tone Input Power = +7 dBm Each Tone) Switching Characteristics tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) 7 - 14 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v00.0303 MICROWAVE CORPORATION HMC322 GaAs MMIC SP8T NON-REFLECTIVE SWITCH, DC - 10.0 GHz GaAs MMIC SUB-HARMONICALLY Isolation Between RFC17 - 25 GHz PUMPED MIXER and Output Ports Insertion Loss vs. Temperature 0 0 -10 INSERTION LOSS (dB) -1 ISOLATION (dB) -20 -30 -40 -50 -4 +25 C +85 C -55 C RF1 RF2 RF3 RF4 RF5 RF6 RF7 RF8 -2 -3 -60 -70 -5 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) Return Loss 0 RFC RF1-8 ON RF1-8 OFF Isolation Between Output Ports 0 -10 ISOLATION (dB) -20 -30 -40 -50 -5 RETURN LOSS (dB) 7 SWITCHES - CHIP 7 - 15 -10 -15 -20 -60 -25 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) -70 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) 0.1 and 1 dB Input Compression Point INPUT COMPRESSION POINT (dBm) 28 Input Third Order Intercept Point INPUT THIRD ORDER INTERCEPT (dBm) 50 26 45 24 40 22 35 +25 C +85 C -55 C 20 1.0 Compression Point 0.1dB Compression Point 30 18 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) 25 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v00.0303 MICROWAVE CORPORATION HMC322 GaAs MMIC SP8T NON-REFLECTIVE SWITCH, DC - 10.0 GHz Absolute Maximum Ratings Bias Voltage Range (Vee) Control Voltage Range (A, B, & C) Storage Temperature Operating Temperature RF Input Power, 0.5 - 10 GHz -7.0 Vdc Vee -0.5V to +1.0 Vdc -65 to +150 C -40 to +85 C +26 dBm Control Voltages State Low High Bias Condition -3V to 0 Vdc @ 25 uA Typical -5 to -4.2 Vdc @ 5 uA Typical Truth Table Control Input A B High High Low Low High High Low Low C High High High High Low Low Low Low Signal Path State RFCOM to: RF1 RF2 RF3 RF4 RF5 RF6 RF7 RF8 Bias Voltage & Current Vee Range = -5.0 Vdc 10% Vee (Vdc) -5.0 Iee (Typ.) (mA) 5.0 Iee (Max.) (mA) 9.0 High Low High Low 7 SWITCHES - CHIP High Low High Low 7 - 16 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v00.0303 MICROWAVE CORPORATION HMC322 GaAs MMIC SP8T NON-REFLECTIVE SWITCH, DC - 10.0 GHz Outline Drawing 7 SWITCHES - CHIP 7 - 17 NOTES: 1. DIMENSIONS IN INCHES [MILLIMETERS]. 2. DIE THICKNESS IS 0.004". 3. TYPICAL BOND PAD IS 0.004" SQUARE. 4. TYPICAL BOND PAD SPACING IS 0.006" CENTER TO CENTER. 5. BOND PAD METALLIZATION: GOLD. 6. BACKSIDE METALLIZATION: GOLD. 7. BACKSIDE METAL IS GROUND. 8. NO CONNECTION REQUIRED FOR UNLABELED GROUND BOND PADS. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v00.0303 MICROWAVE CORPORATION HMC322 GaAs MMIC SP8T NON-REFLECTIVE SWITCH, DC - 10.0 GHz Pad Descriptions Pad Number 1 - 7, 12 - 14 Function RF1, RFC, RF8 - RF2 Description These pads are DC coupled and matched to 50 Ohms. Blocking capacitors are required if RF line potential is not equal to 0V. Interface Schematic 8 A See truth table and control voltage table. 9 B See truth table and control voltage table. 10 C See truth table and control voltage table. 11 Vee Supply Voltage = -5Vdc 10% 7 SWITCHES - CHIP Die Bottom GND Die bottom must be connected to RF / DC ground. TTL Interface Circuit (Required for Each Control Input A, B and C) Note: Control inputs A, B, and C can be driven directly with TTL logic with -5 Volts applied to the HCT logic gates Vee pin and to the Vee pad of the RF Switch. 7 - 18 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v00.0303 MICROWAVE CORPORATION HMC322 GaAs MMIC SP8T NON-REFLECTIVE SWITCH, DC - 10.0 GHz Assembly Diagram 7 SWITCHES - CHIP 7 - 19 Handling Precautions Follow these precautions to avoid permanent damage. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with electrically conductive epoxy. The mounting surface should be clean and flat. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com |
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