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| v02.1202 MICROWAVE CORPORATION HMC327MS8G GaAs InGaP HBT MMIC POWER AMPLIFIER, 3.0 - 4.0 GHz Features Gain: 21 dB Saturated Power: +30 dBm 45% PAE Supply Voltage: +5.0 V Power Down Capability Low External Part Count 8 AMPLIFIERS - SMT Typical Applications This amplifier is ideal for use as a power amplifier for 3.3 - 3.6 GHz applications: * Wireless Local Loop Functional Diagram General Description The HMC327MS8G is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 3.0 and 4.0 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 21 dB of gain, +30 dBm of saturated power at 45% PAE from a +5.0V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use. Electrical Specifications, TA = +25 C, Vs = 5V, Vctl = 5V Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Icq) Control Current (Ipd) Switching Speed Vpd = 0V/5V Vpd = 5V tON, tOFF 36 24 17 Min. Typ. 3.0 - 4.0 21 0.025 15 8 27 30 40 5.0 0.002 / 250 7 40 24 0.035 Max. Units GHz dB dB / C dB dB dBm dBm dBm dB mA mA ns 8 - 104 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v02.1202 HMC327MS8G GaAs InGaP HBT MMIC POWER AMPLIFIER, 3.0 - 4.0 GHz Broadband Gain & Return Loss 25 20 15 Gain vs. Temperature 24 22 20 16 18 14 12 10 8 6 +25 C +85 C -40 C 8 AMPLIFIERS - SMT 8 - 105 RESPONSE (dB) 10 5 0 -5 -10 -15 -20 -25 2 2.5 3 3.5 GAIN (dB) 4 4.5 5 S21 S11 S22 4 2 0 2.5 3 3.5 FREQUENCY (GHz) 4 4.5 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 -5 +25 C +85 C -40 C Output Return Loss vs. Temperature 0 +25 C RETURN LOSS (dB) -10 -15 -20 -25 -30 2.5 RETURN LOSS (dB) +85 C -40 C -5 -10 3 3.5 FREQUENCY (GHz) 4 4.5 -15 2.5 3 3.5 FREQUENCY (GHz) 4 4.5 P1dB vs. Temperature 34 32 30 28 Psat vs. Temperature 34 32 30 28 P1dB (dBm) 26 24 22 20 18 16 14 2.5 3 3.5 FREQUENCY (GHz) 4 4.5 +25 C +85 C -40 C Psat (dBm) 26 24 22 20 18 16 14 2.5 3 3.5 FREQUENCY (GHz) 4 4.5 +25 C +85 C -40 C For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v02.1202 HMC327MS8G GaAs InGaP HBT MMIC POWER AMPLIFIER, 3.0 - 4.0 GHz 8 AMPLIFIERS - SMT Power Compression @ 3.5 GHz 48 Output IP3 vs. Temperature 44 42 40 38 36 34 32 30 28 26 24 22 20 18 16 14 2.5 Pout (dBm), GAIN (dB), PAE (%) 42 36 30 24 18 12 6 0 -5 -3 -1 Pout (dBm) Gain (dB) PAE (%) OIP3 (dBm) +25 C +85 C -40 C 1 3 5 7 9 11 13 15 3 3.5 FREQUENCY (GHz) 4 4.5 INPUT POWER (dBm) Noise Figure vs. Temperature 10 9 8 +25 C +85 C -40 C Gain & Power vs. Supply Voltage 28 27 26 25 32 31 30 29 28 27 26 25 P1dB Psat NOISE FIGURE (dB) P1dB, Psat (dBm) 7 6 5 4 3 2 1 0 3 3.5 4 GAIN dB) 24 23 22 21 20 19 18 4.75 Gain 24 23 22 5.25 4.5 5 Vcc SUPPLY VOLTAGE (Vdc) FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 -10 +25 C +85 C -40 C Power Down Isolation 0 -5 -10 ISOLATION (dB) -20 -30 -40 -50 -60 2.5 ISOLATION (dB) 4.5 -15 -20 -25 -30 -35 -40 2.5 3 3.5 FREQUENCY (GHz) 4 3 3.5 FREQUENCY (GHz) 4 4.5 8 - 106 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v02.1202 HMC327MS8G GaAs InGaP HBT MMIC POWER AMPLIFIER, 3.0 - 4.0 GHz Gain, Power & Quiescent Supply Current vs. Vpd @ 3.5 GHz 30 250 Absolute Maximum Ratings Collector Bias Voltage (Vcc) +5.5 Vdc +5.5 Vdc +20 dBm 150 C 1.88 W 200 8 AMPLIFIERS - SMT 8 - 107 GAIN (dB), P1dB (dBm), Psat (dBm) 25 Control Voltage (Vpd) RF Input Power (RFin)(Vs = Vctl = +5.0 Vdc) Icq (mA) 20 150 15 10 P1dB Psat Gain Icq 100 Junction Temperature Continuous Pdiss (T = 85 C) (derate 29 mW/C above 85 C) Thermal Resistance (junction to ground paddle) Storage Temperature Operating Temperature 50 5 2.5 3 3.5 4 4.5 5 0 34 C/W -65 to +150 C -40 to +85 C Vpd (Vdc) Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEADFRAME MATERIAL: COPPER ALLOY 3. LEADFRAME PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v02.1202 HMC327MS8G GaAs InGaP HBT MMIC POWER AMPLIFIER, 3.0 - 4.0 GHz 8 AMPLIFIERS - SMT Pin Descriptions Pin Number Function Description Interface Schematic 1 Vpd Power Control Pin. For maximum power, this pin hsould be connected to 5.0V. A higher voltage is not recommended. For lower idle current, this voltage can be reduced. 2, 4, 7 GND Ground: Backside of package has exposed metal ground slug that must be connected to ground thru a short path. Vias under the device are required. 3 RF IN This pin is AC coupled and matched to 50 Ohms from 3.0 to 4.0 GHz. 5, 6 RF OUT RF output and bias for the output stage. The power supply for the output device needs to be supplied to these pins. 8 Vcc Power supply voltage for the first amplifier stage. An external bypass capacitor of 330 pF is required. This capacitor should be placed as close to the device as possible. 8 - 108 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v02.1202 HMC327MS8G GaAs InGaP HBT MMIC POWER AMPLIFIER, 3.0 - 4.0 GHz Evaluation PCB 8 AMPLIFIERS - SMT List of Material Item J1 - J2 J3 C1 - C3 C4 C5 C6 L1 R1 U1 PCB* Description PC Mount SMA RF Connector 2 mm DC Header 330 pF Capacitor, 0603 Pkg. 1.2 pF Capacitor, 0603 Pkg. 2.0 pF Capacitor, 0402 Pkg. 2.2 F Capacitor, Tantalum 3.0 nH Inductor, 0805 Pkg. 130 Ohm Resistor, 0603 Pkg. HMC327MS8G Amplifier 104829 Eval Board The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. * Circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 109 MICROWAVE CORPORATION v02.1202 HMC327MS8G GaAs InGaP HBT MMIC POWER AMPLIFIER, 3.0 - 4.0 GHz 8 AMPLIFIERS - SMT Application Circuit TL1 Impedance 50 Ohm 0.038" TL2 50 Ohm 0.231" TL3 50 Ohm 0.1" Note 1: C3 should be located < 0.020" from Pin 8 (Vcc) Note 2: C2 should be located < 0.020" from L1. Length 8 - 110 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v02.1202 HMC327MS8G GaAs InGaP HBT MMIC POWER AMPLIFIER, 3.0 - 4.0 GHz Notes: 8 AMPLIFIERS - SMT For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 111 |
Price & Availability of HMC327MS8G
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