 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MITSUBISHI SEMICONDUCTOR MGFK44A4045 14.0-14.5GHz BAND 25W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFK44A4045 is an internally impedance matched GaAs power FET especially designed for use in 14.0-14.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. OUTLINE DRAWING 24 +/- 0.3 Unit : millimeters (1) 2MIN 0.6 +/- 0.15 R 1.2 17.4 +/- 0.2 8.0 +/- 0.2 FEATURES Internally impedance matched High output power P1dB = 44.0dBm(TYP.) @f=14.0-14.5GHz High linear power gain GLP = 6.0dB(TYP) @f=14.0-14.5GHz (2) APPLICATION For use in 14.0-14.5GHz band amplifiers 2MIN (3) 20.4 +/- 0.2 VDS = 10 (V) ID(Rfoff) =6.0 (A) Rg=25 (ohm) 1.4 RECOMMENDED BIAS CONDITIONS 4.3 +/- 0.4 IG 16.7 GF-38 (Ta=25deg.C) Ratings -15 -10 20 -72 144 100 175 -65 / +175 Unit V V A mA mA W deg.C deg.C (1) GATE (2) SOURCE (FLANGE) (3) DRAIN ABSOLUTE MAXIMUM RATINGS Symbol Parameter VGDO Gate to drain voltage VGSO Gate to source voltage ID Drain current IGR Reverse gate current IGF Forward gate current PT *1 Total power dissipation Tch Channel temperature Tstg Storage temperature *1 : Tc=25deg.C < Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them.Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1)placement of substitutive, auxiliary circuits, (2)use of non-flammable material or (3)prevention against any malfunction or mishap. ELECTRICAL CHARACTERISTICS Symbol IDSS gm VGS(off) P1dB GLP P.A.E. Rth (Ch-C) Parameter Saturated drain current Transconductance Gate to source cut-off voltage Output power at 1dB gain compression Linear power gain Power added efficiency Thermal resistance (Ta=25deg.C) Test conditions VDS=3V,VG=0V VDS=0V,ID=6.0A VDS=3V,ID=80mA Min. ---1.0 43 VDS=10V, ID(RF off)=6.0A, f=14.0 - 14.5GHz 5.0 -Channel to Case -Limits Typ. Max. 16.0 -6 -1.5 44 6.0 17 1.2 --4.0 ---1.5 Unit A S V dBm dB % deg.C/W 2.4 +/- 0.2 QUALITY GRADE 0.1 +/- 0.05 MITSUBISHI ELECTRIC Jul-04 (1/4) MGFK44A4045 OUTPUT POWER & POWER ADDED EFFICIENCY &GAINvs. INPUT POWER TEST CONDITIONS : Vds(Rfoff)=10V,Ids(RFoff)=6.0A,Rg=25ohm Freqency=14.0GHz Pout Gain Id RF Ig RF Pout(dBm), Glp(dB), PAE(%), Id(A), Ig(mA) Pout(dBm), Glp(dB), PAE(%), Id(A), Ig(mA) 35 30 25 20 15 10 5 0 -5 -10 22 27 32 Pin(dBm) 37 42 PAE 35 30 25 20 15 10 5 0 -5 -10 22 27 32 Pin(dBm) 37 42 Freqency=14.2GHz Pout Gain Id RF Ig RF PAE Pout(dBm), Glp(dB), PAE(%), Id(A), Ig(mA) 35 30 25 20 15 10 5 0 -5 -10 22 27 32 Pin(dBm) 37 42 Freqency=14.5GHz Pout Gain Id RF Ig RF PAE 45 40 45 40 45 40 MITSUBISHI ELECTRIC CORPORATION July'04 (2/4) MGFK44A4045 IM3 vs. OUTPUT POWER TEST CONDITIONS Vds(Rfoff)=10V,Ids(RFoff)=6.0A,Rg=25ohm 2-tone test Freqency=14.00GHz,14.01GHz 40 -10 40 Freqency=14.20GHz14.21GHz -10 40 Freqency=14.5GHz,14.51 -10 35 -20 35 -20 35 -20 Pout(dBm)(S.C.L) Pout(dBm)(S.C.L) Pout(dBm)(S.C.L) IM3(dBc) IM3(dBc) 30 -30 30 -30 30 -30 25 Pout IM3 -40 25 Pout IM3 -40 25 Pout IM3 -40 20 20 25 30 35 Pin(dBm)(S.C.L) -50 20 20 25 30 35 Pin(dBm)(S.C.L) -50 20 20 25 30 35 Pin(dBm)(S.C.L) -50 MITSUBISHI ELECTRIC CORPORATION July'04 (3/4) IM3(dBc) MITSUBISHI SEMICONDUCTOR MGFK44A4045 14.0-14.5GHz BAND 25W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC July'04 (4/4) |
Price & Availability of MGFK44A4045
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |