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| SHINDENGEN Schottky Rectifiers (SBD) Dual S40HC1R5 15V 40A OUTLINE DIMENSIONS Case : MTO - 3P Unit : mm RATINGS Absolute Maximum Ratings i Tc=25, unless otherwise specified j Symbol Conditions Item Tstg Storage Temperature Tj Operating Junction Temperature VRM Maximum Reverse Voltage IO Average Rectified Forward Current 50Hz sine wave, R-load, Rating for each diode Io/2, Tc=103 IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25 Peak Surge Forward Current TOR (Recommended torqueF 0.5Nm) Mounting Torque Electrical Characteristics i Tc=25, unless otherwise specified j Item Symbol Conditions VF Forward Voltage IF=20A, Pulse measurement, Rating of per diode IR Reverse Current VR=15V, Pulse measurement, Rating of per diode Cj Junction Capacitance f=1MHz, VR=10V, Rating of per diode Thermal Resistance junction to case AEjc Ratings -55125 125 15 40 350 0.8(0.5) Ratings Max 0.41 Max 10 Typ 960 Max 1.0 Unit V A A Nm Unit V mA pF /W Copyright & Copy;2001 Shindengen Electric Mfg.Co.Ltd S40HC1R5 500 Forward Voltage Pulse measurement per diode 200 100 IF [A] Forward Current 50 20 Tc=125C [MAX] Tc=125C [TYP] Tc= 25C [MAX] Tc= 25C [TYP] 10 5 2 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Forward Voltage VF [V] S40HC1R5 10000 Reverse Current Pulse measurement per diode 1000 Tc=125C [TYP] IR [mA] Tc=100C [TYP] 100 Reverse Current Tc=75C [TYP] Tc=50C [TYP] 10 Tc=25C [TYP] 1 0.1 0 5 10 15 Reverse Voltage VR [V] S40HC1R5 25 Forward Power Dissipation DC D=0.8 PF [W] 20 0.3 0.2 0.1 15 0.05 0.5 SIN Forward Power Dissipation 10 5 0 0 10 20 30 40 50 60 70 Average Rectified Forward Current Io [A] Tj =125C 0 tp D=tp/T T IO S40HC1R5 Reverse Power Dissipation 40 35 30 25 20 0.5 15 10 5 0 DC D=0.05 0.1 0.2 0.3 Reverse Power Dissipation PR [W] SIN 0.8 0 5 10 15 20 Reverse Voltage VR [V] Tj = 125C 0 VR tp D=tp/T T S40HC1R5 80 Derating Curve Io [A] 70 DC 60 50 0.5 40 SIN 0.3 30 0.2 20 0.1 0.05 10 0 D=0.8 Average Rectified Forward Current 0 20 40 60 80 100 120 140 Case Temperature Tc [C] IO VR = 7.5V 0 0 VR tp D=tp/T T S40HC1R5 500 Peak Surge Forward Capability IFSM 10ms 10ms 1 cycle Peak Surge Forward Current IFSM [A] 400 non-repetitive, sine wave, Tj=25C before surge current is applied 300 200 100 0 1 2 5 10 20 50 100 Number of Cycles [cycle] S40HC1R5 10000 Junction Capacitance f=1MHz Tc=25C per diode TYP Junction Capacitance Cj [pF] 1000 100 0.1 0.2 0.5 1 2 5 10 15 Reverse Voltage VR [V] |
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