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| BDW84, BDW84A, BDW84B, BDW84C, BDW84D PNP SILICON POWER DARLINGTONS Copyright (c) 1997, Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997 q Designed for Complementary Use with BDW83, BDW83A, BDW83B, BDW83C and BDW83D 150 W at 25C Case Temperature 15 A Continuous Collector Current Minimum hFE of 750 at 3 V, 6 A E B SOT-93 PACKAGE (TOP VIEW) 1 q q q C 2 3 Pin 2 is in electrical contact with the mounting base. MDTRAA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING BDW84 BDW84A Collector-base voltage (IE = 0) BDW84B BDW84C BDW84D BDW84 BDW84A Collector-emitter voltage (IB = 0) (see Note 1) BDW84B BDW84C BDW84D Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at (or below) 25C case temperature (see Note 2) Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Operating temperature range Operating free-air temperature range NOTES: 1. 2. 3. 4. V EBO IC IB Ptot Ptot 1/2LIC 2 Tj Tstg TA VCEO VCBO SYMBOL VALUE -45 -60 -80 -100 -120 -45 -60 -80 -100 -120 -5 -15 -0.5 150 3.5 100 -65 to +150 -65 to +150 -65 to +150 V A A W W mJ C C C V V UNIT These values apply when the base-emitter diode is open circuited. Derate linearly to 150C case temperature at the rate of 1.2 W/C. Derate linearly to 150C free air temperature at the rate of 28 mW/C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -5 mA, RBE = 100 , VBE(off) = 0, RS = 0.1 , VCC = -20 V. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 BDW84, BDW84A, BDW84B, BDW84C, BDW84D PNP SILICON POWER DARLINGTONS AUGUST 1978 - REVISED MARCH 1997 electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS BDW84 V (BR)CEO Collector-emitter breakdown voltage BDW84A IC = -30 mA IB = 0 (see Note 5) BDW84B BDW84C BDW84D VCE = -30 V ICEO Collector-emitter cut-off current V CE = -30 V V CE = -40 V V CE = -50 V V CE = -60 V VCB = -45 V V CB = -60 V V CB = -80 V V CB = -100 V ICBO Collector cut-off current V CB = -120 V V CB = -45 V V CB = -60 V V CB = -80 V V CB = -100 V V CB = -120 V IEBO hFE VBE(on) VCE(sat) VEC Emitter cut-off current Forward current transfer ratio Base-emitter voltage Collector-emitter saturation voltage Parallel diode forward voltage VEB = VCE = V CE = VCE = IB = -5 V -3 V -3 V -3 V -12 mA IB = 0 IB = 0 IB = 0 IB = 0 IB = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IC = 0 IC = -6 A IC = -15 A IC = -6 A IC = -6 A IC = -15 A IB = 0 (see Notes 5 and 6) (see Notes 5 and 6) (see Notes 5 and 6) 750 100 -2.5 -2.5 -4 -3.5 V V V TC = 150C TC = 150C TC = 150C TC = 150C TC = 150C BDW84 BDW84A BDW84B BDW84C BDW84D BDW84 BDW84A BDW84B BDW84C BDW84D BDW84 BDW84A BDW84B BDW84C BDW84D MIN -45 -60 -80 -100 -120 -1 -1 -1 -1 -1 -0.5 -0.5 -0.5 -0.5 -0.5 -5 -5 -5 -5 -5 -2 20000 mA mA mA V TYP MAX UNIT IB = -150 mA IE = -15 A NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RJC RJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 0.83 35.7 UNIT C/W C/W resistive-load-switching characteristics at 25C case temperature PARAMETER ton toff TEST CONDITIONS IC = -10 A V BE(off) = 4.2 V IB(on) = -40 mA RL = 3 MIN IB(off) = 40 mA tp = 20 s, dc 2% TYP 0.9 7 MAX UNIT s s Turn-on time Turn-off time Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. PRODUCT INFORMATION 2 BDW84, BDW84A, BDW84B, BDW84C, BDW84D PNP SILICON POWER DARLINGTONS AUGUST 1978 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V 10000 TCS145AG COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT -2*0 tp = 300 s, duty cycle < 2% IB = IC / 100 -1*5 TCS145AH hFE - Typical DC Current Gain TC = -40C TC = 25C TC = 100C 1000 -1*0 -0*5 TC = -40C TC = 25C TC = 100C 0 -0*5 -1*0 IC - Collector Current - A -10 -20 VCE = -3 V tp = 300 s, duty cycle < 2% 100 -0*5 -1*0 IC - Collector Current - A -10 -20 Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT -3*0 VBE(sat) - Base-Emitter Saturation Voltage - V TC = -40C TC = 25C -2*5 TC = 100C TCS145AI -2*0 -1*0 -1*5 -0*5 IB = IC / 100 tp = 300 s, duty cycle < 2% 0 -0*5 -1*0 IC - Collector Current - A -10 -20 Figure 3. PRODUCT INFORMATION 3 BDW84, BDW84A, BDW84B, BDW84C, BDW84D PNP SILICON POWER DARLINGTONS AUGUST 1978 - REVISED MARCH 1997 MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA -100 SAS145AB IC - Collector Current - A -10 -1*0 BDW84 BDW84A BDW84B BDW84C BDW84D -0*1 -1*0 -10 -100 -1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE 160 Ptot - Maximum Power Dissipation - W 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 TC - Case Temperature - C TIS140AB Figure 5. PRODUCT INFORMATION 4 BDW84, BDW84A, BDW84B, BDW84C, BDW84D PNP SILICON POWER DARLINGTONS AUGUST 1978 - REVISED MARCH 1997 MECHANICAL DATA SOT-93 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SOT-93 4,90 4,70 o 4,1 4,0 15,2 14,7 3,95 4,15 1,37 1,17 16,2 MAX. 12,2 MAX. 31,0 TYP. 18,0 TYP. 1 1,30 1,10 2 3 0,78 0,50 11,1 10,8 2,50 TYP. ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab. MDXXAW PRODUCT INFORMATION 5 BDW84, BDW84A, BDW84B, BDW84C, BDW84D PNP SILICON POWER DARLINGTONS AUGUST 1978 - REVISED MARCH 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright (c) 1997, Power Innovations Limited PRODUCT INFORMATION 6 |
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