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| High Voltage Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary Data Sheet IXTH 3N120 V DSS I D25 VDS(on) = 1200 V = 3A = 4.5 Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C 3N120 3N110 3N120 3N110 Maximum Ratings 1200 1100 1200 1100 20 30 3 12 3 20 700 5 150 -55 to +150 150 -55 to +150 V V V V V V A A A mJ mJ V/ns W C C C C Advantages Easy to mount Space savings High power density Features International standard packages Low RDS (on) Rated for unclamped Inductive load Switching (UIS) Molding epoxies meet UL 94 V-0 flammability classification G = Gate S = Source D = Drain TAB = Drain G D D (TAB) TO-247 S 1.6 mm (0.063 in) from case for 10 s Mounting torque 300 1.13/10 Nm/lb.in. 6 g Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1200 2.5 4.5 100 TJ = 25C TJ = 125C 25 1 4.5 V V nA A mA VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1 mA VDS = VGS, ID = 250 A VGS = 20 VDC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Note 1 (c) 2003 IXYS All rights reserved DS99025(03/03) IXTH 3N120 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1.5 2.2 1050 1300 VGS = 0 V, VDS = 25 V, f = 1 MHz 100 125 25 17 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 4.7 (External), 15 32 18 39 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 9 22 0.8 0.25 50 S pF pF pF ns ns ns ns nC nC nC K/W K/W Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain 1 2 3 TO-247 AD Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 0.5 * ID25, Note 1 Dim. Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 3 12 1.5 700 A A V ns Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Note 1 IF = IS, -di/dt = 100 A/s, VR = 100 V Notes: 1. Pulse test, t 300 s, duty cycle d 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXTH 3N120 5 TJ = 25OC 4.0 VGS = 9V 8V 7V 3.5 3.0 TJ = 125OC 4 ID - Amperes ID - Amperes 6V VGS = 9V 8V 7V 6V 3 2 1 0 2.5 2.0 1.5 1.0 5V 5V 0.5 0.0 4V 0 2 4 6 8 10 12 14 16 18 20 0 3 6 9 12 15 18 21 24 27 30 VDS - Volts VDS - Volts Fig.1 Output Characteristics @ Tj = 25C 2.50 2.25 VGS = 10V TJ = 125 C O Fig. 2 Output Characteristics @ Tj = 125C 2.8 VGS = 10V RDS(ON) - Normalized 2.5 2.00 1.75 1.50 1.25 TJ = 25OC RDS(ON) - Normalized 2.2 1.9 1.6 1.3 ID = 3A ID =1.5A 1.00 0.75 0 1 2 3 4 5 1.0 25 50 75 100 125 150 ID - Amperes TJ - Degrees C Fig. 3 RDS(on) vs. Drain Current 4.0 3.5 3.0 Fig. 4 Temperature Dependence of Drain to Source Resistance 3.0 2.5 ID - Amperes 2.5 2.0 1.5 1.0 0.5 0.0 ID - Amperes 2.0 1.5 TJ = 125oC 1.0 TJ = 25oC 0.5 -25 0 25 50 75 100 125 150 0.0 3.5 -50 4.0 4.5 5.0 5.5 6.0 TC - Degrees C VGS - Volts Fig. 5 Drain Current vs. Case Temperature Fig. 6 Drain Current vs Gate Source Voltage (c) 2003 IXYS All rights reserved IXTH 3N120 12 Ciss f = 1MHz 10 VGS - Volts 8 6 4 2 0 Capacitance - pF VDS = 600V ID = 1.5A 1000 Coss 100 Crss 0 10 20 30 40 50 60 10 0 5 10 15 20 25 30 35 40 Gate Charge - nC VDS - Volts Fig. 7 Gate Charge Characteristic Curve 5 VGS = 0V Fig. 8 Capacitance Curves 4 ID - Amperes 3 TJ = 125OC TJ = 25OC 2 1 0 0.2 0.4 0.6 0.8 1.0 VSD - Volts Fig. 9 Drain Current vs Drain to Source Voltage 1.00 R(th)JC - K/W 0.10 Single Pulse 0.01 0.00 10-4 10-3 10-2 10-1 100 101 Pulse Width - Seconds Fig.10 Transient Thermal Impedance IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 |
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