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200100 AP1117T2 GC70BF MAX440 4ARHZ 2SA747A HBG5066X 25F160
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  Datasheet File OCR Text:
 Crystal oscillator
SG-645
Q33645xxxxxxx00
C C
C C C C, M: C C
% % - - - % - - %

29400 m/s2
750 mm 3 0.3 ms 1/2 Sine Wave 3
mm
7.1
mm
1.8
4.6
1.5 Max.
0.15 (0.75) 3.8 (0.75)
0.4 5.08
0 Min.
4.2
5.1
5.08
39
2.0
E 135.00C PCW 0245A
Crystal oscillator
32.0001 MHz -0.5 V +7.0 V 4.5 V -20 C - 45 mA Max. 30 mA Max. 50 A Max. 40 % 60 % 45 % 55 % 40 % 45 % 60 % 55 % 40 % 60 % VDD 0.4 V 0.4 V 15 pF 5 TTL+15 pF 25 pF 15 pF 25 pF 50 pF 2.0 V Max. 0.8 V Max. 4.0 ns 3.0 ns 2.0 ns 4.0 ns 4.0 ns 3.0 ns 2.0 ns 4.0 ns 5 10 ms Max. 10-6 / Max.
10-6 Max.
5.5 V -55 C +70 C 50
10-6
3.0 V 3.6 V +125 C -40 C 100
10-6
+85 C -20 C +70 C
10-6
100
-40 C +85 C OE=GND(P W), f0=135 MHz ST=GND(S W) 50 % VDD, CL=Max. 50 % VDD, CL=25 pF (f0 1.4 V, CL=Max. 1.4 V, 5TTL+15 pF (f0 50 % VDD, CL=15 pF lOH=-16 mA ( TW / HW) lOH=-8 mA ( CW) lOH=16 mA ( TW / HW) lOH=8 mA ( CW)
28 mA Max. 16 mA Max.
) )
VDD 0.4 V 0.4 V
70 % VDD 20 % VDD 3.0 ns
OE or ST 20 % 80 % VDD CL=Max. 20 % 80 % VDD CL 25 pF 0.8 V 2.0 V CL=Max. 0.4 V 2.4 V CL=Max. 80 % 20 % VDD CL=Max. 80 % 20 % VDD CL 25 pF 2.0 V 0.8 V CL=Max. 2.4 V 0.4 V CL=Max.
3.0 ns
20
29400 m/s2
750 mm 3 0.3 ms 1/2 Sine Wave 3
40


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