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| BUF642 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor (SWOT) HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation Very low operating temperature Optimized RBSOA High reverse voltage 14283 Applications Electronic lamp ballast circuits Switch-mode power supplies Absolute Maximum Ratings Tcase = 25C, unless otherwise specified Parameter Collector-emitter voltage g Test Conditions Symbol VCEO VCEW VCES VEBO IC ICM IB IBM Ptot Tj Tstg Value 400 550 900 9 6 10 3 6 70 150 -65 to +150 Unit V V V V A A A A W C C Emitter-base voltage Collector current Collector peak current Base current Base peak current Total power dissipation Junction temperature Storage temperature range Tcase 25C Maximum Thermal Resistance Tcase = 25C, unless otherwise specified Parameter Junction case Junction ambient Test Conditions Symbol RthJC RthJA Value 1.78 85 Unit K/W K/W Document Number 86511 Rev. 2, 20-Jan-99 www.vishay.de * FaxBack +1-408-970-5600 1 (8) BUF642 Vishay Telefunken Electrical Characteristics Tcase = 25C, unless otherwise specified Test Conditions VCES = 900 V VCES = 900 V; Tcase = 150C VCEO = 400 V Collector-emitter IC = 500 mA; L = 125 mH; breakdown voltage (figure 1) Imeasure = 100 mA Emitter-base breakdown voltage IE = 1 mA Collector-emitter IC = 1 A; IB = 0.25 A saturation voltage IC = 3 A; IB = 1 A Base-emitter saturation voltage IC = 1 A; IB = 0.25 A g IC = 3 A; IB = 1 A DC forward current transfer ratio VCE = 2 V; IC = 10 mA VCE = 2 V; IC = 1 A VCE = 2 V; IC = 3 A VCE = 2 V; IC = 6 A Collector-emitter working voltage VS = 50 V; L = 1 mH; IC = 2.5 A; IB1 = 0.5 A; -IB2 = 0.5 A; -VBE(off) = 5 V Parameter Collector cut-off current Symbol ICES ICES ICEO V(BR)CEO V(BR)EBO VCEsat VCEsat VBEsat VBEsat hFE hFE hFE hFE VCEW Min Typ Max 50 200 100 Unit mA mA mA V V V V V V 400 9 0.5 1 1 1.5 15 15 8 4 550 V www.vishay.de * FaxBack +1-408-970-5600 2 (8) Document Number 86511 Rev. 2, 20-Jan-99 BUF642 Vishay Telefunken Switching Characteristics Tcase = 25C, unless otherwise specified Parameter Test Conditions Resistive load (figure 2) Turn on time IC = 1 A; IB1 = 0.25 A; -IB2 = 0.5 A; VS = 250 V Storage time Fall time Turn on time IC = 3 A; IB1 = 0.6 A; -IB2 = 1.5 A; VS = 250 V Storage time Fall time Inductive load (figure 3) Storage time IC = 1 A; IB1 = 0.25 A; -IB2 = 0.5 A; Vclamp = 300 V; L = 200 mH Fall time Storage time IC = 3 A; IB1 = 0.6 A; -IB2 = 1.5 A; Vclamp = 300 V; L = 200 mH Fall time Symbol ton ts tf ton ts tf ts tf ts tf Min Typ Max 0.3 2.5 0.3 0.5 2 0.2 2.5 0.25 2 0.1 Unit ms ms ms ms ms ms ms ms ms ms 94 8863 V S2 + 10 V IB IC w Imeasure IC 5 IC V S1 + 0 to 30 V V(BR)CEO tp T tp 3 Pulses + LC VCE V(BR)CEO 100 mW + 0.1 + 10 ms I(BR)R Figure 1. Test circuit for V(BR)CE0 Document Number 86511 Rev. 2, 20-Jan-99 www.vishay.de * FaxBack +1-408-970-5600 3 (8) BUF642 Vishay Telefunken 94 8852 IB IB1 0 t RC -IB2 IC (1) IB1 RB VBB + VCE IB VCC IC 0.9 IC 0.1 IC tr td ton t ts toff tf (1) Fast electronic switch Figure 2. Test circuit for switching characteristics - resistive load 94 8853 IB IB1 LC 0 -IB2 IC (1) IB1 RB VBB IB VCE Vclamp (2) IC VCC 0.9 IC t + (1) Fast electronic switch (2) Fast recovery rectifier 0.1 IC t ts tr Figure 3. Test circuit for switching characteristics - inductive load www.vishay.de * FaxBack +1-408-970-5600 4 (8) Document Number 86511 Rev. 2, 20-Jan-99 BUF642 Vishay Telefunken Typical Characteristics (Tcase = 25_C unless otherwise specified) 100 P tot - Total Power Dissipation ( W ) 8 IC - Collector Current ( A ) 1.76 K/W 10 12.5 K/W 6 1 25 K/W 0.1 0.01 0.001 50 K/W RthJA = 85 K/W 4 0.1 x IC < IB2 < 0.5 x IC VCESat < 2V 0 0 100 200 300 400 500 600 2 0 95 10545 25 50 75 100 125 150 95 10544 VCE - Collector Emitter Voltage ( V ) Tcase ( C ) Figure 4. VCEW - Diagram 5 IB=390mA IC - Collector Current ( A ) 4 290mA 200mA 3 100mA 2 50mA 1 24mA 0 0 95 10550 Figure 7. Ptot vs.Tcase V CEsat - Collector Emitter Saturation Voltage ( V ) 10 1A 2A 1 4A 6A 0.1 IC = 0.5A 0.01 0.01 4 8 12 16 20 0.1 1 10 VCE - Collector Emitter Voltage ( V ) 95 10551 IB - Base Current ( A ) Figure 5. IC vs. VCE h FE - Forward DC Current Transfer Ratio h FE - Forward DC Current Transfer Ratio 100 100 Figure 8. VCEsat vs. IB 125C 75C Tj = 25C 10 10V 10 5V VCE = 2V 1 0.001 95 10552 0.01 0.1 1 10 95 10553 1 0.001 0.01 0.1 1 10 IC - Collector Current ( A ) IC - Collector Current ( A ) Figure 6. hFE vs. IC Figure 9. hFE vs. IC Document Number 86511 Rev. 2, 20-Jan-99 www.vishay.de * FaxBack +1-408-970-5600 5 (8) BUF642 Vishay Telefunken 17.5 saturated switching R-load IC = 1A, IB1 = 0.12A t f - Fall Time ( ms ) 1.0 saturated switching R-load IC = 1A, IB1 = 0.12A t s - Storage Time (m s ) 14 0.8 10.5 Tcase = 125C 0.6 7 3.5 0.4 0.2 Tcase = 125C 25C 0 0 95 10556 25C 0 6 8 10 95 10555 2 4 0 2 4 6 -IB2/IB1 8 10 -IB2/IB1 Figure 10. ts vs. -IB2/IB1 17.5 1.0 Figure 12. tf vs. -IB2/IB1 t s - Storage Time (m s ) 14 saturated switching R-load IC = 1A, IB1 = 0.25A t f - Fall Time ( ms ) 0.8 saturated switching R-load IC = 1A, IB1 = 0.25A 10.5 Tcase = 125C 7 3.5 25C 0 0 1 2 3 -IB2/IB1 4 5 0.6 Tcase = 125C 0.4 0.2 0 0 1 2 3 -IB2/IB1 4 5 25C 95 10557 95 10554 Figure 11. ts vs. -IB2/IB1 Figure 13. tf vs. -IB2/IB1 www.vishay.de * FaxBack +1-408-970-5600 6 (8) Document Number 86511 Rev. 2, 20-Jan-99 BUF642 Vishay Telefunken Dimensions in mm 0.52 0.40 4.8 4.4 2.70 2.35 1.40 1.27 1.3 1.0 0.85 0.65 1.5 0.9 E 10.4 9.8 3.8 3.5 C 2.64 2.44 B 1.5 1.2 2.9 2.7 6.7 5.8 4.8 4.3 13.6 12.2 16.0 15.2 Standard Plastic Case 14A 3 DIN 41 869 JEDEC TO 220 94 9184 technical drawings according to DIN specifications Collector connected with metallic surface Document Number 86511 Rev. 2, 20-Jan-99 www.vishay.de * FaxBack +1-408-970-5600 7 (8) BUF642 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.de * FaxBack +1-408-970-5600 8 (8) Document Number 86511 Rev. 2, 20-Jan-99 |
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