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FQH90N15 / FQA90N15 N-Channel Power MOSFET
FQH90N15 / FQA90N15
N-Channel Power MOSFET Features
* 90A, 150V, RDS(on) = 0.018 @VGS = 10 V * Low gate charge (typical 220 nC) * Low Crss (typical 200 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability * 175C maximum junction temperature rating
QFET
Description
October 2006
(R)
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifire, high efficiency switching for DC/DC converters, and DC motor control, uninterrupted power supply.
D
G GD S
TO-247
FQH Series
TO-3P
G DS
FQA Series
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C
(Note 2) (Note 1) (Note 1) (Note 3)
Parameter
- Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed
(Note 1)
FQH90N15/FQA90N15
150 90 63.5 360 25 1400 90 37.5 6.0 375 2.5 -55 to +175 300
Unit
V A A A V mJ A mJ V/ns W W/C C C
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
Thermal Characteristics
Symbol
RJC RCS RJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient
Min.
-0.24 --
Max.
0.4 -40
Unit
C/W C/W C/W
(c)2006 Fairchild Semiconductor Corporation
1
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FQH90N15 / FQA90N15 Rev. C
FQH90N15 / FQA90N15 N-Channel Power MOSFET
Package Marking and Ordering Information
Device Marking
FQH90N15 FQA90N15 FQA90N15
Device
FQH90N15 FQA90N15 FQA90N15_F109
Package
TO-247 TO-3P TO-3PN
Reel Size
----
Tape Width
----
Quantity
30 30 30
Electrical Characteristics
Symbol
Off Characteristics BVDSS BVDSS / TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr
NOTES:
TC = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Conditions
VGS = 0V, ID = 250A ID = 250A, Referenced to 25C VDS = 150V, VGS = 0V VDS = 120V, TC = 150C VGS = 25V, VDS = 0V VGS = -25V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 45A VDS = 40V, ID = 45A VDS = 25V, VGS = 0V, f = 1.0MHz
(Note 4)
Min.
150 -----2.0 ------
Typ.
-0.15 -----0.014 68 6700 1400 200 105 760 470 410 220 43 110
Max Units
--1 10 100 -100 4.0 0.018 -8700 1800 260 220 1500 950 830 285 --V V/C A A nA nA V S pF pF pF ns ns ns ns nC nC nC
On Characteristics
Dynamic Characteristics
Switching Characteristics VDD = 75V, ID = 90A RG = 25
(Note 4, 5)
------(Note 4, 5)
VDS = 120V, ID = 90A VGS = 10V
--
Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 90A VGS = 0V, IS = 90A dIF/dt =100A/s
(Note 4)
------
---175 0.97
90 360 1.5 ---
A A V ns C
1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.29mH, IAS = 90A, VDD = 25V, RG = 25, Starting TJ = 25C 3. ISD 90A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics
2 FQH90N15 / FQA90N15 Rev. C
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FQH90N15 / FQA90N15 N-Channel Power MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top :
Figure 2. Transfer Characteristics
10
2
ID, Drain Current [A]
ID , Drain Current [A]
10
2
10
1
175 C
o
25 C 10
0
o
10
1
-55 C
Notes : 1. V DS = 30V 2. 250s Pulse Test
o
Notes : 1. 250s Pulse Test o 2. TC = 25 C
10
-1
10
0
10
1
10
-1
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
0.12
Figure 4. Body Diode Forward Voltage Variation vs. Source Current
IDR , Reverse Drain Current [A]
Drain-Source On-Resistance
10
2
0.09 VGS = 10V 0.06
RDS(on) [],
10
1
VGS = 20V
0.03
o
10
0
175 C 25oC
o
Note : TJ = 25 C
Notes : 1. VGS = 0V 2. 250s Pulse Test
0.00
0
50
100
150
200
250
300
10
-1
ID , Drain Current [A]
0.0
0.4
0.8
1.2
1.6
2.0
2.4
VSD , Source-Drain Voltage [V]
Figure 5. Capacitance Characteristics
18000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Figure 6. Gate Charge Characteristics
12
15000
10
VDS = 30V VDS = 75V
VGS, Gate-Source Voltage [V]
Capacitance [pF]
12000
Ciss Coss
8
VDS = 120V
9000
6
6000
Crss
3000
Notes : 1. VGS = 0 V 2. f = 1 MHz
4
2
Note : ID = 90 A
0 -1 10
0
10
0
10
1
0
50
100
150
200
250
VDS, Drain-Source Voltage [V]
Q G, Total Gate Charge [nC]
3 FQH90N15 / FQA90N15 Rev. C
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FQH90N15 / FQA90N15 N-Channel Power MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2
Figure 8. On-Resistance Variation vs. Temperature
3.0
BVDSS, (Normalized) Drain-Source Breakdown Voltage
RDS(ON), (Normalized)
1.1
Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
0.9
Notes : 1. VGS = 0 V 2. ID = 250 A
0.5
Notes : 1. VGS = 10 V 2. ID = 45 A
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case Temperature
100
10
3
Operation in This Area is Limited by R DS(on)
80
ID, Drain Current [A]
10
2
1 ms DC 10 ms
ID, Drain Current [A]
100 s
10 s
60
10
1
40
10
0
Notes : o 1. TC = 25 C 2. TJ = 175 C 3. Single Pulse
o
20
10
-1
10
0
10
1
10
2
0 25
50
75
100
125
o
150
175
VDS, Drain-Source Voltage [V]
T C, Case Temperature [ C]
Figure 11. Transient Thermal Response Curve
(t), Thermal Response
D = 0 .5
10
-1
0 .2 0 .1 0 .0 5 0 .0 2
N o te s : 1 . Z ? JC ( t) = 0 .4
o
C /W M a x . (t)
2 . D u ty F a c to r , D = t 1 /t 2 3 . T JM - T C = P D M * Z ?
JC
PDM
s in g le p u ls e
JC
10
-2
0 .0 1
t1
t2
Z
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
4 FQH90N15 / FQA90N15 Rev. C
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FQH90N15 / FQA90N15 N-Channel Power MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
5 FQH90N15 / FQA90N15 Rev. C
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FQH90N15 / FQA90N15 N-Channel Power MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
6 FQH90N15 / FQA90N15 Rev. C
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FQH90N15 / FQA90N15 N-Channel Power MOSFET
Mechanical Dimensions
TO-247AD (FKS PKG CODE 001)
Dimensions in Millimeters
7 FQH90N15 / FQA90N15 Rev. C
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FQH90N15 / FQA90N15 N-Channel Power MOSFET
Mechanical Dimensions (Continued)
TO-3P
15.60 0.20 3.80 0.20 13.60 0.20 o3.20 0.10 9.60 0.20 4.80 0.20 1.50 -0.05
+0.15
12.76 0.20
19.90 0.20
16.50 0.30
3.00 0.20 1.00 0.20
3.50 0.20
2.00 0.20
13.90 0.20
23.40 0.20
18.70 0.20
1.40 0.20
5.45TYP [5.45 0.30]
5.45TYP [5.45 0.30]
0.60 -0.05
+0.15
Dimensions in Millimeters
8 FQH90N15 / FQA90N15 Rev. C
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FQH90N15 / FQA90N15 N-Channel Power MOSFET
Mechanical Dimensions (Continued)
TO-3PN
Dimensions in Millimeters 9 FQH90N15 / FQA90N15 Rev. C
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FQH90N15 / FQA90N15 N-Channel Power MOSFET
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. OCXTM SILENT SWITCHER(R) UniFETTM FACT Quiet SeriesTM ACExTM OCXProTM UltraFET(R) GlobalOptoisolatorTM ActiveArrayTM SMART STARTTM (R) OPTOLOGIC GTOTM BottomlessTM SPMTM VCXTM HiSeCTM Build it NowTM StealthTM WireTM OPTOPLANARTM I2CTM CoolFETTM SuperFETTM PACMANTM CROSSVOLTTM SuperSOTTM-3 POPTM i-LoTM DOMETM SuperSOTTM-6 Power247TM ImpliedDisconnectTM EcoSPARKTM SuperSOTTM-8 PowerEdgeTM IntelliMAXTM E2CMOSTM SyncFETTM PowerSaverTM ISOPLANARTM TCMTM PowerTrench(R) LittleFETTM EnSignaTM TinyBoostTM MICROCOUPLERTM FACTTM QFET(R) TinyBuckTM MicroFETTM FAST(R) QSTM TinyPWMTM MicroPakTM QT OptoelectronicsTM FASTrTM TinyPowerTM MICROWIRETM Quiet SeriesTM FPSTM TinyLogic(R) MSXTM RapidConfigureTM FRFETTM MSXProTM RapidConnectTM TINYOPTOTM SerDesTM Across the board. Around the world.TM TruTranslationTM ScalarPumpTM The Power Franchise(R) UHCTM Programmable Active DroopTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
Datasheet Identification Advance Information
Product Status Formative or In Design First Production
Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I20
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
10 FQH90N15 / FQA90N15 Rev. C
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