View IXBH42N170_703170.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

High Voltage, High Gain
BIMOSFET Monolithic Bipolar MOS Transistor
TM
IXBH 42N170 IXBT 42N170
VCES = 1700 V = 75 A IC25 VCE(sat) = 3.6 V
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) TSC (SCSOA) PC TJ TJM Tstg
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 10 Clamped inductive load VGE = 15 V, VCES = 1200V, TJ = 125C RG = 10 non repetitive TC = 25C
Maximum Ratings 1700 1700 20 30 75 42 180 ICM = VCES = 90 1350 10 360 -55 ... +150 150 -55 ... +150 350 260 6 4 V V V V A A A A V s W C C C C C g g
TO-268 (IXBT)
G E (TAB)
TO-247 AD (IXBH)
G
C (TAB) C E C = Collector, TAB = Collector
G = Gate, E = Emitter,
Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) TO-247 AD TO-268
1.13/10Nm/lb.in.
Features High Blocking Voltage JEDEC TO-268 surface and JEDEC TO-247 AD Low conduction losses High current handling capability MOS Gate turn-on - drive simplicity Molding epoxies meet UL 94 V-0 flammability classification Applications AC motor speed control Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies Capacitor discharge circuits Advantages Lower conduction losses than MOSFETs High power density Suitable for surface mounting Easy to mount with 1 screw, (isolated mounting screw hole)
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1700 2.5 TJ = 25C TJ = 125C 5.5 50 1.5 100 3.6 TJ = 125C 3.7 V V A mA nA V V
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 250 A, VGE = 0 V = 750 A, VCE = VGE
VCE = 0.8 VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V
(c) 2004 IXYS All rights reserve
DS98710B(12/04)
IXBH 42N170 IXBT 42N170
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 20 30 3500 VCE = 25 V, VGE = 0 V, f = 1 MHz 195 45 147 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 40 70 Inductive load, TJ = 25C IC = IC90, VGE = 15 V VCE = 0.5 VCES, RG = Roff = 10 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V VCE = 0.5 VCES, RG = Roff = 10 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 45 35 365 465 9 45 38 50 390 730 12.8 S
P
TO-247 AD Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 %
pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 0.35 K/W
Dim.
e
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
TO-268 Outline
(TO-247)
0.25
K/W
Reverse Diode Symbol VF IRM t rr Test Conditions IF t IF vR
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 3.0 24 360 V A ns
= IC90, VGE = 0 V, Pulse test, < 300 us, duty cycle d < 2% = 25A, VGE = 0 V, -diF/dt = 50 A/us = 100V
Min Recommended Footprint
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692
IXBH 42N170 IXBT 42N170
Fig. 1. Output Characte ristics @ 25 Deg. C
90 80 70 VGE = 15V 13V 11V 250 225 200 9V 175
Fig. 2. Extended Output Characte ristics @ 25 de g. C
VGE = 17V 15V 13V
I C - Amperes
I C - Amperes
60 50 40 30 20 10 0 0 1 2 3 4
150 125 100 75 50
11V
7V
9V
5V 5 6 7
25 0 0 2 4 6 8 10 12
7V
14
16
18
V C E - Volts Fig. 3. Output Characteristics @ 125 Deg. C
90 80 70 VGE = 15V 13V 11V 1.8 1.7 1.6
V C E - Volts Fig. 4. De pende nce of V CE(sat) on Tem perature
V GE = 15V
I C = 84A
V C E (sat)- Normalized
1.5 1.4 1.3 1.2 1.1 1.0 0.9
I C - Amperes
60 50 40 30 20 10 0 0 1 2 3 4 5
9V
I C = 42A
7V
5V
0.8 0.7 6 7 -50 -25 0 25 50 75
I C = 21A
100
125
150
V CE - Volts Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage
10 9 8 TJ = 25C 80 70 60
TJ - Degrees Centigrade Fig. 6. Input Adm ittance
I C - Amperes
VC E - Volts
7 6 5 4 3 2 5 6 7 8 9
I C = 84A 42A 21A
50 40 30 20 10 0 TJ = 125C 25C -40C
V G E - Volts
10
11 12 13 14
15 16 17
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
V G E - Volts
(c) 2004 IXYS All rights reserve
IXBH 42N170 IXBT 42N170
Fig. 7. Transconductance
45 40 35 TJ = -40C 25C 125C 200 180 160
Fig. 8. Forw ard Voltage Drop of Intrinsic Diode
I F - Amperes
g f s - Siemens
30 25 20 15 10 5 0 0
140 120 100 80 60 40 20 0
T J = 25 C T J = 125 C
10
20
30
40
50
60
70
80
0.5
1
1 .5
I C - Amperes Fig. 9. Dependence of Turn-Off Energy on RG
35 TJ = 125C VGE = 15V VCE = 850V
V F - Volts
2
2.5
3
3.5
Fig. 10. Dependence of Turn-Off Energy on Ic
24 22 R G = 10 VGE = 15V VCE = 850V
30
I C = 84A
20
E off - milliJoules
25
E off - MilliJoules
18 16 14 12 10 TJ = 25C TJ = 125C
20 I C = 42A 15 I C = 21A
10
8 6
5 0 10 20 30 40 50 60 70 80 90
4 20 30 40 50 60 70 80 90
R G - Ohms Fig. 11. Dependence of Turn-Off Energy on Tem perature
24 22 20 I C = 84A 12 15 VCE = 600V I C = 42A I G = 10mA
I C - Amperes Fig. 12. Gate Charge
E off - milliJoules
18 16 14 12 10 8 6 4 25
I C = 42A
VG E - Volts
R G = 10 VGE = 15V VCE = 850V
9
6
3 I C = 21A 0 35 45 55 65 75 85 95 105 115 125 0 20 40
TJ - Degrees Centigrade
IXYS reserves the right to change limits, test conditions, and dimensions.
Q G - nanoCoulombs
60
80
100
120
140
160
IXBH 42N170 IXBT 42N170
Fig. 13. Capacitance
10000 f = 1 MHz C ies 1000 C oes
Capacitance - p F
100
C res 10 0 5 10 15
V C E - Volts
20
25
30
35
40
Fig. 14. Maxim um Transient Therm al Resistance
1
R (th) J C - (C/W)
0.1
0.01 0.1 1
Pulse Width - milliseconds
10
100
1000
(c) 2004 IXYS All rights reserve

▲Up To Search▲

Price & Availability of IXBH42N170

	To Download IXBH42N170 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .