 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| High Voltage IGBT IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE(sat) = 3.5 V tfi(typ) = 160 ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 110C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 5 Clamped inductive load TC = 25C Maximum Ratings 1200 1200 20 30 50 28 150 ICM = 120 @ 0.8 VCES 250 -55 ... +150 150 -55 ... +150 300 260 V V V V A A A A TO-268 (IXGT) G E C (TAB) TO-247 AD (IXGH) G C (TAB) C E W C C C C C G = Gate, E = Emitter, C = Collector, TAB = Collector Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) (TO-247) 1.13/10Nm/lb.in. TO-247 AD TO-268 6 4 g g Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1200 2.5 TJ = 25C 5 25 100 TJ = 125C 2.8 2.75 3.5 V V A nA V V Features High Voltage IGBT for resonant power supplies - Induction heating - Rice cookers International standard packages JEDEC TO-268 and JEDEC TO-247 AD Low switching losses, low V(sat) MOS Gate turn-on - drive simplicity Advantages BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250 A , VGE = 0 V = 250 A, VCE = VGE VCE = VCES, VGE= 0 V VCE = 0 V, VGE = 20 V IC = 28A, VGE = 15 V High power density Suitable for surface mounting Easy to mount with 1 screw, (isolated mounting screw hole) (c) 2004 IXYS All rights reserved DS98987E(04/04) IXGH 28N120B IXGT 28N120B Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 15 23 1700 VCE = 25 V, VGE = 0 V, f = 1 MHz 120 45 92 IC = 28A, VGE = 15 V, VCE = 0.5 VCES 13 35 30 Inductive load, TJ = 25C IC = 28 A, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 5 20 210 170 2.2 35 28 Inductive load, TJ = 125C IC = 28A, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 5 28N120B 28N120BD1 0.3 1.4 250 340 4.6 280 320 S pF pF pF nC nC nC ns ns ns ns Dim. e P TO-247 AD Outline gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK IC = 28A; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 % 5.0 mJ ns ns mJ mJ ns ns mJ 0.5 K/W Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline (TO-247) 0.25 K/W Dim. Min Recommended Footprint A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 IXGH 28N120B IXGT 28N120B Fig. 1. Output Characte ristics @ 25 C 56 49 42 VGE = 15V 13V 11V Fig. 2. Extended Output Characte ristics @ 25 C 240 210 180 VGE = 17V 15V 13V I C - Amperes 35 28 21 I C - Amperes 9V 150 120 90 60 30 9V 11V 7V 14 7 5V 0 1 1.5 2 2.5 3 3.5 4 4.5 5 7V 0 0 2 4 6 V C E - Volts Fig. 3. Output Characteristics @ 125 C 56 VGE = 15V 49 42 13V 11V 1.3 1.4 VGE = 15V V C E - Volts 8 10 12 14 16 18 20 Fig. 4. Dependence of V CE(sat) on Tem perature I C = 56A VC E (sat)- Normalized 1.2 1.1 1.0 0.9 0.8 I C = 14A I C = 28A I C - Amperes 35 28 21 14 7 0 1 1.5 2 2.5 9V 7V 5V 0.7 3 3.5 4 4.5 5 -50 -25 0 25 50 75 100 125 150 V CE - Volts TJ - Degrees Centigrade Fig. 6. Input Adm ittance 100 TJ = 25C 90 80 Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage 8 7 I C - Amperes VC E - Volts 6 I C = 56A 28A 14A 70 60 50 40 30 20 10 TJ = 125C 25C -40C 5 4 3 2 6 7 8 9 10 0 V G E - Volts 11 12 13 14 15 16 17 4 5 6 V G E - Volts 7 8 9 10 (c) 2004 IXYS All rights reserved IXGH 28N120B IXGT 28N120B Fig. 7. Trans conductance 35 30 25 20 15 10 5 0 0 10 20 30 40 50 60 70 80 90 100 TJ = -40C 25C 125C 14 18 16 TJ = 125C VGE = 15V VCE = 960V I C = 56A Fig. 8. Dependence of Turn-off Ene rgy Loss on RG E o f f - milliJoules g f s - Siemens 12 10 8 6 4 2 0 I C = 28A I C = 14A I C - Amperes Fig. 9. Dependence of Turn-Off 10 9 8 R G = 5 VGE = 15V 0 10 20 30 R G - Ohms 40 50 60 70 80 90 100 Energy Los s on IC TJ = 125C 11 10 9 Fig. 10. De pende nce of Turn-off Ene rgy Loss on Tem pe rature R G = 5 VGE = 15V VCE = 960V I C = 56A E o f f - MilliJoules 7 6 5 4 3 2 1 0 10 E o f f - milliJoules VCE = 960V 8 7 6 5 4 3 2 1 0 I C = 28A TJ = 25C I C = 14A 25 35 45 55 65 75 85 95 105 115 125 15 20 25 I C - Amperes 30 35 40 45 50 55 60 TJ - Degrees Centigrade Fig. 12. Depe ndence of Turn-off 450 Fig. 11. Dependence of Turn-off 1400 Sw itching Tim e on RG td(off) Sw itching Tim e on IC Switching Time - nanoseconds 1200 tfi - - - - - TJ = 125C VGE = 15V VCE = 960V Switching Time - nanoseconds 400 350 300 250 200 TJ = 25C 150 100 td(off) tfi - - - - - R G = 5 TJ = 125C VGE = 15V VCE = 960V 1000 800 600 I C = 14A I C = 28A I C = 56A 400 200 0 10 20 30 R G - Ohms 40 50 60 70 80 90 100 10 15 20 25 I C - Amperes 30 35 40 45 50 55 60 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 IXGH 28N120B IXGT 28N120B Fig. 13. Dependence of Turn-off Sw itching Tim e on Tem perature 450 16 Fig. 14. Gate Charge Switching Time - nanoseconds 400 350 300 250 200 150 100 25 td(off) tfi - - - - - R G = 5 VGE = 15V VCE = 960V I C = 28A I C = 56A I C = 14A 14 12 VCE = 600V I C = 28A 0mA I G= 1 VG E - Volts 10 8 6 4 I C = 14A I C = 56A 35 45 55 65 75 85 95 105 115 125 2 0 TJ - Degrees Centigrade 0 10 20 30 40 50 60 70 80 90 100 Q G - nanoCoulombs Fig. 16. Reverse-Bias Safe Operating Area 140 Fig. 15. Capacitance 10000 f = 1 MHz C ies 120 100 80 60 40 20 0 TJ = 125C R G = 5 dV/dT < 10V/ns Capacitance - p F C oes 100 C res 10 0 5 10 15 20 25 30 35 40 I C - Amperes 1000 V C E - Volts 100 300 500 700 900 1100 1300 V C E - Volts Fig. 17. Maxim um Transient Therm al Resistance 1.00 R ( t h ) J C - C / W 0.50 0.10 1 10 Pulse Width - milliseconds 100 1000 (c) 2004 IXYS All rights reserved |
Price & Availability of IXGH28N120B
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |