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| SEMICONDUCTOR TECHNICAL DATA General Description KHB9D0N50P1/F1 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB9D0N50P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. A O C F E G B Q I FEATURES VDSS(Min.)= 500V, ID= 9A Drain-Source ON Resistance : RDS(ON)=0.8 @VGS =10V K M L J D N N P Qg(typ.) =34.6nC H DIM MILLIMETERS _ 9.9 + 0.2 A 15.95 MAX B 1.3+0.1/-0.05 C _ D 0.8 + 0.1 _ E 3.6 + 0.2 _ F 2.8 + 0.1 3.7 G H 0.5+0.1/-0.05 1.5 I _ 13.08 + 0.3 J K 1.46 _ 1.4 + 0.1 L _ 1.27+ 0.1 M _ 2.54 + 0.2 N _ 4.5 + 0.2 O _ 2.4 + 0.2 P _ 9.2 + 0.2 Q 1 2 3 1. GATE 2. DRAIN 3. SOURCE MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above25 ) SYMBOL VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg 135 1.07 150 -55 150 9 5.4 36 360 13.5 4.5 44 0.35 RATING KHB9D0N50P1 KHB9D0N50F1 500 30 9* 5.4* 36* mJ K TO-220AB UNIT V A C F O E G P KHB9D0N50F1 V A B mJ V/ns W W/ L J D M M H Q DIM MILLIMETERS _ 10.16 + 0.2 A _ 15.87 + 0.2 B _ C 2.54 + 0.2 _ D 0.8 + 0.1 _ E 3.18 + 0.1 _ F 3.3 + 0.1 _ 12.57 + 0.2 G _ 0.5 + 0.1 H J 13.0 MAX _ K 3.23 + 0.1 L 1.47 MAX _ 2.54 + 0.2 M _ N 4.7 + 0.2 _ O 6.68 + 0.2 P 6.5 _ Q 2.76 + 0.2 Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-toAmbient N 1 2 3 1. GATE 2. DRAIN 3. SOURCE RthJC RthCS RthJA 0.93 0.5 62.5 2.86 62.5 /W /W /W TO-220IS D * : Drain current limited by maximum junction temperature. G S 2005. 10. 24 Revision No : 0 1/7 KHB9D0N50P1/F1 ELECTRICAL CHARACTERISTICS (Tc=25 CHARACTERISTIC ) TEST CONDITION MIN. TYP. MAX. UNIT SYMBOL Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance BVDSS BVDSS/ Tj IDSS Vth IGSS RDS(ON) ID=250 A, VGS=0V ID=250 A, Referenced to 25 VDS=500V, VGS=0V, VDS=VGS, ID=250 A VGS= 30V, VDS=0V VGS=10V, ID=4.5A 500 2.0 0.57 0.65 10 4.0 100 0.8 V V/ A V nA Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Reverse Transfer Capacitance Output Capacitance Source-Drain Diode Ratings Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS ISP VSD trr Qrr VGS Note 5) Essentially independent of operating temperature. 2006. 1. 17 Revision No : 0 2/7 KHB9D0N50P1/F1 ID - VDS VGS TOP : 15.0 V 10.0 V 8.0 V 7.0 V 1 6.0 V 10 5.5 V 5.0 V Bottom : 4.5 V ID - VGS Drain Current ID (A) Drain Current ID (A) 10 1 150 C 10 0 10 0 25 C -55 C 10 -1 10 -1 10 0 10 1 10 -1 2 4 6 8 10 Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V) BVDSS - Tj Normalized Breakdown Voltage BVDSS 1.2 RDS(ON) - ID 2.0 On - Resistance RDS(ON) () VGS = 0V IDS = 250A 1.1 1.5 VGS = 10V 1.0 1.0 VGS = 20V 0.9 0.5 0.8 -100 0 -50 0 50 100 150 0 5 10 15 20 25 Junction Temperature Tj ( C ) Drain Current ID (A) IS - VSD 3.0 RDS(ON) - Tj VGS = 10V IDS = 4.5A Reverse Drain Current IS (A) 10 1 Normalized On Resistance 1.0 1.2 1.4 2.5 2.0 1.5 1.0 0.5 150 C 10 0 25 C 10 -1 0.2 0.4 0.6 0.8 0.0 -100 -50 0 50 100 150 Source - Drain Voltage VSD (V) Junction Temperature Tj ( C ) 2006. 1. 17 Revision No : 0 3/7 KHB9D0N50P1/F1 C - VDS 2800 2400 Ciss 12 Qg- VGS Gate - Source Voltage VGS (V) Frequency = 1MHz ID = 9A VDS = 100V VDS = 250V VDS = 400V 10 8 6 4 2 0 0 5 10 Capacitance (pF) 2000 1600 1200 800 400 0 10-1 100 101 Crss Coss 15 20 25 30 35 Drain - Source Voltage VDS (V) Gate - Charge Qg (nC) Safe Operation Area (KHB9D0N50P1) 102 Operation in this area is limited by RDS(ON) 10s 100s Safe Operation Area (KHB9D0N50F1) 102 Operation in this area is limited by RDS(ON) 10s Drain Current ID (A) 101 100 Drain Current ID (A) 101 100 100s 1ms 10ms 100ms DC 1ms 10ms 100ms 10-1 Tc= 25 C Tj = 150 C -2 Single nonrepetitive pulse 10 10-1 Tc= 25 C Tj = 150 C Single nonrepetitive pulse 10-2 DC 100 101 102 103 100 101 102 103 Drain - Source Voltage VDS (V) Drain - Source Voltage VDS (V) ID - Tj 10 8 6 4 2 0 25 50 75 100 125 150 Drain Current ID (A) Junction Temperature Tj ( C) 2006. 1. 17 Revision No : 0 4/7 KHB9D0N50P1/F1 Rth {KHB9D0N50P1} 100 Normalized Transient Thermal Resistance Duty=0.5 0.2 10-1 0.1 0.05 PDM t1 t2 0.02 0 .01 Single Pulse - Duty Factor, D= t1/t2 - RthJC = Tj(max) - Tc PD 100 101 10-2 10-5 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) Rth {KHB9D0N50F1} Normalized Transient Thermal Resistance 100 Duty=0.5 0.2 0.1 0.05 0.02 10-1 PDM t1 t2 Single Pulse 0.01 - Duty Factor, D= t1/t2 - RthJC = Tj(max) - Tc PD 100 101 10-2 10-5 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 2006. 1. 17 Revision No : 0 5/7 KHB9D0N50P1/F1 - Gate Charge VGS Fast Recovery Diode 10 V ID 0.8 VDSS 1.0 mA ID VDS Qgs VGS Qgd Qg Q - Single Pulsed Avalanche Energy 1 EAS= LIAS2 2 BVDSS BVDSS - VDD BVDSS L IAS 0.5 VDSS 25 VDS ID(t) VDD 10 V VGS VDS(t) Time tp - Resistive Load Switching VDS RL 0.5 VDSS 25 VGS 10% td(on) VGS ton tr 90% VDS tf td(off) toff 10V 2006. 1. 17 Revision No : 0 6/7 KHB9D0N50P1/F1 - Source - Drain Diode Reverse Recovery and dv /dt DUT VDS IF Body Diode Forword Current ISD (DUT) di/dt IRM IS Body Diode Reverse Current 0.8 x VDSS VDS (DUT) driver Body Diode Recovery dv/dt VSD VDD 10V VGS Body Diode Forword Voltage drop 2006. 1. 17 Revision No : 0 7/7 |
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