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| KSB1121 PNP Epitaxial Planar Silicon Transistor July 2005 KSB1121 PNP Epitaxial Planar Silicon Transistor High Current Driver Applications * Low Collector-Emitter Saturation Voltage * Large Current Capacity * Fast Switching Speed * Complement to KSD1621 Marking 11 PY 1 21 WW Weekly code Year code hFE grage SOT-89 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PC P C* TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Ta = 25C unless otherwise noted Parameter Ratings -30 -25 -6 -2 500 1.3 150 -55 ~ 150 Units V V V A mW W C C Collector Power Dissipation Junction Temperature Storage Temperature 2 * Mounted on Ceramic Board (250mm x 0.8mm) Electrical Characteristics T Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE (sat) VBE (sat) a= 25C unless otherwise noted Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Test Condition IC = -10A, IE = 0 IC = -1mA, IB = 0 IE = -10A, IC = 0 VCB = -20V, IE = 0 VBE = -4V, IC = 0 VCE = -2V, IC = -0.1A VCE = -2V, IC = -1.5A IC = -1.5A, IB = -75mA IC = -1.5A, IB = -75mA Min. -30 -25 -6 Typ. Max. Units V V V -100 -100 100 65 -0.35 -0.85 560 -0.6 -1.2 nA nA V V (c)2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com KSB1121 Rev. B1 KSB1121 PNP Epitaxial Planar Silicon Transistor Electrical Characteristics (Continued) T Symbol fT Cob tON tSTG tF a= 25C unless otherwise noted Parameter Current Gain Bandwidth Product Output Capacitance Turn On Time * Storage Time * Fall time * Test Condition VCE = -10V, IC = -50mA VCB = -10V, IE = 0, f = 1MHz VCC = -12V, VBE = -5V IB1 = -IB2 = -25mA IC= -500mA, RL = 24 Min. Typ. 150 32 60 350 25 Max. Units MHz pF ns ns ns hFE Classification Classification hFE1 R 100 ~ 200 S 140 ~ 280 T 200 ~ 400 U 280 ~ 560 Package Marking and Ordering Information Device Marking 1121 Device KSB1121 Package SOT-89 Reel Size 13" Tape Width -- Quantity 4,000 KSB1121 Rev. B1 2 www.fairchildsemi.com KSB1121 PNP Epitaxial Planar Silicon Transistor Typical Performance Characteristics Figure 1. Static Characteristic IB = -200mA IB = -100mA IB = -50mA IB = -30mA IB = -20mA Figure 2. DC Current Gain 1000 -2.0 VCE= -2V IC[A], COLLECTOR CURRENT IB = -10mA -1.2 hFE, DC CURRENT GAIN -1.6 100 IB = -8mA IB = -6mA -0.8 IB = -4mA IB = -2mA 10 -0.4 0.0 0.0 IB = 0 -0.2 -0.4 -0.6 -0.8 -1.0 1 -0.01 -0.1 -1 -10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage -10 Figure 4. Base-Emitter On Voltage -3.2 VCE(sat)[V], SATURATION VOLTAGE IC = 10 IB -2.8 VCE = -2V IC[A], COLLECTOR CURRENT -2.4 -2.0 -1.6 -1.2 -0.8 -0.4 0.0 0.0 -1 -0.1 -0.01 -0.01 -0.1 -1 -10 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 IC[A], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 5. Collector Output Capacitance 1000 Figure 6. Current Gain Bandwidth Product fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT 1000 IE=0 f = 1MHz VCE = -10V Cob[pF], CAPACITANCE 100 100 10 1 -0.1 -1 -10 -100 10 -0.1 -1 -10 VCB [V], COLLECTOR-BASE VOLTAGE IC[A], COLLECTOR CURRENT KSB1121 Rev. B1 3 www.fairchildsemi.com KSB1121 PNP Epitaxial Planar Silicon Transistor Mechanical Dimensions SOT-89 4.50 0.20 1.65 0.10 C0.2 (0.50) 1.50 0.20 (0.40) 0.20 2.50 0.50 0.10 1.50 TYP 1.50 TYP 0.40 0.10 0.40 +0.10 -0.05 (1.10) 4.10 0.20 Dimensions in Millimeters KSB1121 Rev. B1 4 www.fairchildsemi.com KSB1121 PNP Epitaxial Planar Silicon Transistor TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 Preliminary No Identification Needed Full Production Obsolete Not In Production 5 KSB1121 Rev. B1 www.fairchildsemi.com |
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