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| ZXMP6A17DN8 DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -60V; RDS(ON) = 0.125 ; ID= -3.1A DESCRIPTION This new generation of high cell density planar MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES * Low on-resistance * Fast switching speed * Low threshold * Low gate drive * Low profile SOIC package SO8 APPLICATIONS * DC-DC Converters * Power Management functions * Disconnect switches * Motor control ORDERING INFORMATION DEVICE ZXMP6A17DN8TA ZXMP6A17DN8TC REEL 7'` 13'` TAPE WIDTH 12mm 12mm QUANTITY PER REEL 500 units 2500 units PINOUT DEVICE MARKING ZXMP 6A17D Top view PROVISIONAL ISSUE A - SEPTEMBER 2002 1 ZXMP6A17DN8 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current@V GS =10V; T A =25 C (b)(d) @V GS =10V; T A =70 C (b)(d) @V GS =10V; T A =25 C (a)(d) Pulsed Drain Current (c) Continuous Source Current (Body Diode)(b) Pulsed Source Current (Body Diode)(c) Power Dissipation at TA=25C (a)(d) Linear Derating Factor Power Dissipation at TA=25C (a)(e) Linear Derating Factor Power Dissipation at TA=25C (b)(d) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS V GS ID LIMIT -60 20 -3.1 -2.4 -2.3 -11.1 -3.0 -11.1 1.25 10 1.81 14.5 2.15 17 -55 to +150 UNIT V V A A A A A A W mW/C W mW/C W mW/C C I DM IS I SM PD PD PD T j :T stg THERMAL RESISTANCE PARAMETER Junction to Ambient (a)(d) Junction to Ambient (b)(e) Junction to Ambient (b)(d) Notes (a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions. (b) For a dual device surface mounted on FR4 PCB measured at t 10 sec. SYMBOL R JA R JA R JA VALUE 100 70 60 UNIT C/W C/W C/W (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10s - pulse width limited by maximum junction temperature. (d) For a dual device with one active die. (e) For dual device with 2 active die running at equal power. PROVISIONAL ISSUE A - SEPTEMBER 2002 2 ZXMP6A17DN8 CHARACTERISTICS -ID Drain Current (A) Limited Max Power Dissipation (W) 10 RDS(on) 1 DC 1s 100ms Single Pulse Tamb=25C One active die 10ms 1ms 100s 100m 10m -VDS Drain-Source Voltage (V) 1 10 100 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 Two active die One active die 20 40 60 80 100 120 140 160 Temperature (C) Safe Operating Area 110 Tamb=25C 100 90 One active die 80 70 60 D=0.5 50 40 Single Pulse 30 D=0.2 20 D=0.05 10 D=0.1 0 100 1m 10m 100m 1 10 100 1k Derating Curve Single Pulse Tamb=25C One active die Thermal Resistance (C/W) MaximumPower (W) 100 10 1 100 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Pulse Power Dissipation PROVISIONAL ISSUE A - SEPTEMBER 2002 3 ZXMP6A17DN8 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage V (BR)DSS I DSS I GSS V GS(th) -0.8 0.125 0.190 4.9 S -60 -1.0 100 V A nA V I D =-250A, V GS =0V V DS =-60V, V GS =0V V GS = 20V, V DS =0V I =-250 A, V DS = V GS D V GS =-10V, I D =-2.2A V GS =-4.5V, I D =-1.8A V DS =-15V,I D =-2.2A SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Static Drain-Source On-State Resistance R DS(on) (1) Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3) NOTES (1) Measured under pulsed conditions. Width 300s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. g fs C iss C oss C rss t d(on) tr t d(off) tf Qg Qg Q gs Q gd V SD t rr Q rr 670 46.7 28.0 pF pF pF V DS =-30 V, V GS =0V, f=1MHz 1.9 22.4 20.0 16.0 7.3 15.1 1.8 1.9 ns ns ns ns nC nC nC nC V DS =-30V,V GS =-10V, I D =-2.2A V DS =-30V,V GS =-5V, I D =-2.2A V DD =-30V, I D =-1A RG V GS =-10V (6.0, -0.85 26.4 32.7 -0.95 V ns nC T J =25C, I S =-2A, V GS =0V T J =25C, I F =-1.7A, di/dt= 100A/s PROVISIONAL ISSUE A - SEPTEMBER 2002 4 ZXMP6A17DN8 TYPICAL CHARACTERISTICS T = 25C 10V -ID Drain Current (A) 1 2.5V -VGS 2V -ID Drain Current (A) 10 4.5V 3.5V 3V T = 150C 10V 10 4.5V 3.5V 3V 2.5V 2V 1 -VGS 1.5V 0.1 0.1 0.01 0.1 -VDS Drain-Source Voltage (V) 1 10 0.01 0.1 -VDS Drain-Source Voltage (V) 1 10 Output Characteristics 2.0 10 Output Characteristics VGS = -10V ID = - 0.9A RDS(on) Normalised RDS(on) and VGS(th) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 0 50 -ID Drain Current (A) T = 150C 1 T = 25C VGS(th) VGS = VDS ID = -250uA 0.1 1 2 3 -VDS = 10V 4 5 100 150 -VGS Gate-Source Voltage (V) Tj Junction Temperature (C) Typical Transfer Characteristics RDS(on) Drain-Source On-Resistance () 2V -VGS 2.5V 3V 3.5V T = 25C Normalised Curves v Temperature -ISD Reverse Drain Current (A) 10 T = 150C 10 1 1 4.5V 10V 0.1 T = 25C 0.1 0.1 1 10 0.01 0.0 On-Resistance v Drain Current -ID Drain Current (A) -VSD Source-Drain Voltage (V) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Source-Drain Diode Forward Voltage PROVISIONAL ISSUE A - SEPTEMBER 2002 5 ZXMP6A17DN8 TYPICAL CHARACTERISTICS -VGS Gate-Source Voltage (V) 1000 900 800 700 600 500 400 300 200 100 0 0.1 10 VGS = 0V f = 1MHz ID = -2.2A C Capacitance (pF) 8 6 4 2 VDS = -30V CISS COSS CRSS 1 10 0 0 2 4 6 8 10 12 14 16 -VDS - Drain - Source Voltage (V) Q - Charge (nC) Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge PROVISIONAL ISSUE A - SEPTEMBER 2002 6 ZXMP6A17DN8 PACKAGE OUTLINE PACKAGE DIMENSIONS INCHES DIM MIN A A1 D H E L e b c 0.053 0.004 0.189 0.228 0.150 0.016 MAX 0.069 0.010 0.197 0.244 0.157 0.050 MIN 1.35 0.10 4.80 5.80 3.80 0.40 MAX 1.75 0.25 5.00 6.20 4.00 1.27 MILLIMETRES 0.050 BSC 0.013 0.008 0 0.020 0.010 8 0.020 1.27 BSC 0.33 0.19 0 0.25 0.51 0.25 8 0.50 CONTROLLING DIMENSIONS ARE IN INCHES APPROX IN MILLIMETRES h 0.010 (c) Zetex plc 2002 Europe Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4422 Fax: (44) 161 622 4420 uk.sales@zetex.com Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY11788 USA Telephone: (631) 360 2222 Fax: (631) 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza, Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com PROVISIONAL ISSUE A - SEPTEMBER 2002 7 |
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