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| 1MBI400S-120 1200V / 400A 1 in one-package Features * High speed switching * Voltage drive * Low inductance module structure IGBT Module Applications * Inverter for Motor drive * AC and DC Servo drive amplifier * Uninterruptible power supply * Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25C unless otherwise specified) Unit Symbol Rating V VCES 1200 V VGES 20 A Tc=25C IC 600 A Tc=80C 400 A Tc=25C IC pulse 1200 A Tc=80C 800 A -IC 400 A 1ms -IC pulse 800 W Max. power dissipation PC 3100 C Operating temperature Tj +150 C Storage temperature Tstg -40 to +125 Isolation voltage *1 Vis AC 2500 (1min.) V N*m Screw torque Mounting *2 3.5 N*m Terminals *2 4.5 N*m Terminals *2 1.7 *1 : Aii terminals should be connected together when isolation test will be done *2 : Recommendable value : Mounting 2.5 to 3.5 N*m(M5 or M6) Terminal 3.5 to 4.5 N*m(M6), 1.3 to 1.7N*m(M4) Item Collector-Emitter voltage Gate-Emitter voltaga Collector Continuous current 1ms Equivalent Circuit Schematic C E G E Electrical characteristics (at Tj=25C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Symbol ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr tr(i) toff tf VF trr Characteristics Min. Typ. - - 5.5 - - - - - - - - - - - - - - - 7.2 2.3 2.8 48000 10000 8800 0.35 0.25 0.1 0.45 0.08 2.7 2.4 - Conditions Max. 4.0 0.8 8.5 2.6 - - - - 1.2 0.6 - 1.0 0.3 3.5 - 0.35 VGE=0V, VCE=1200V VCE=0V, VGE=20V VCE=20V, IC=400mA Tc=25 C VGE=15V, IC=400A Tc=125C VGE=0V VCE=10V f=1MHz VCC=600V IC=400A VGE=15V RG=1.8 ohm Tj=25C Tj=125C IF=400A IF=400A, VGE=0V V s mA A V V pF Unit s Turn-off time Forward on voltage Reverse recovery time Thermal resistance characteristics Item Thermal resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f)*4 Characteristics Min. Typ. - - - - - 0.0125 Conditions Max. 0.04 0.12 - IGBT FWD the base to cooling fin C/W C/W C/W Unit *4 : This is the value which is defined mounting on the additional cooling fin with thermal compound 1MBI400S-120 Characteristics Collector current vs. Collector-Emiiter voltage Tj= 25C (typ.) 1000 1000 IGBT Module Collector current vs. Collector-Emiiter voltage Tj= 125C (typ.) VGE= 20V 15V 12V 800 800 VGE= 20V 15V 12V Collector current : Ic [ A ] 600 10V Collector current : Ic [ A ] 600 10V 400 400 200 200 8V 8V 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] Collector current vs. Collector-Emiiter voltage VGE=15V (typ.) 1000 10 Collector-Emiiter voltage vs. Gate-Emitter voltage Tj= 25C (typ.) Tj= 25C 800 Tj= 125C 8 600 Collector - Emitter voltage : VCE [ V ] Collector current : Ic [ A ] 6 400 4 Ic= 800A 2 Ic= 400A Ic=200A 200 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] 0 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emiiter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C 100000 1000 Dynamic Gate charge (typ.) Vcc=600V, Ic=400A, Tj= 25C 25 Cies Capacitance : Cies, Coes, Cres [ pF ] 800 20 Collector - Emitter voltage : VCE [ V ] 600 15 10000 400 10 5000 Coes Cres 200 5 1000 0 5 10 15 20 25 30 35 Collector - Emitter voltage : VCE [ V ] 0 0 1000 2000 Gate charge : Qg [ nC ] 3000 0 4000 Gate - Emitter voltage : VGE [ V ] 1MBI400S-120 IGBT Module Switching time vs. Collector current (typ.) Vcc=600V, VGE=+-15V, Rg= 1.8ohm, Tj= 25C 1000 1000 Switching time vs. Collector current (typ.) Vcc=600V, VGE=+-15V, Rg= 1.8ohm, Tj= 125C toff Switching time : ton, tr, toff, tf [ nsec ] 500 Switching time : ton, tr, toff, tf [ nsec ] toff 500 ton ton tr tr tf 100 100 tf 50 0 100 200 300 400 500 600 700 Collector current : Ic [ A ] 50 0 100 200 300 400 500 600 700 Collector current : Ic [ A ] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=400A, VGE=+-15V, Tj= 25C 5000 ton 100 Switching loss vs. Collector current (typ.) Vcc=600V, VGE=+-15V, Rg=1.8ohm Eon(125C) Switching loss : Eon, Eoff, Err [ mJ/pulse ] toff Switching time : ton, tr, toff, tf [ nsec ] 80 tr 1000 Eon(25C) 60 500 Eoff(125C) 40 Eoff(25C) Err(125C) 20 Err(25C) 100 tf 50 0.5 0 1 10 Gate resistance : Rg [ ohm ] 50 0 200 400 Collector current : Ic [ A ] 600 800 Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=400A, VGE=+-15V, Tj= 125C 300 Eon 900 800 700 Reverse bias safe operating area +VGE=15V, -VGE<=15V, Rg>=1.8ohm, Tj<=125C Switching loss : Eon, Eoff, Err [ mJ/pulse ] Collector current : Ic [ A ] 50 200 600 500 400 300 200 100 100 Eoff Err 0 0.5 0 1 10 Gate resistance : Rg [ ohm ] 0 200 400 600 800 1000 1200 1400 Collector - Emitter voltage : VCE [ V ] 1MBI400S-120 IGBT Module Forward current vs. Forward on voltage (typ.) Reverse recovery characteristics (typ.) Vcc=600V, VGE=+-15V, Rg=1.8ohm 1000 800 Tj=125C Tj=25C Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] 600 Irr(125C) trr(125C) Irr(25C) 100 Forward current : IF [ A ] 400 trr(25C) 200 0 0 1 2 3 4 10 0 100 200 300 400 500 600 700 Forward on voltage : VF [ V ] Forward current : IF [ A ] Transient thermal resistance 0.5 Thermal resistanse : Rth(j-c) [ C/W ] FWD 0.1 0.05 IGBT 0.01 1E-3 0.001 0.01 0.1 1 Pulse width : Pw [ sec ] Outline Drawings, mm mass : 380g |
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