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EMF18 / UMF18N Transistors Power management (dual transistors) EMF18 / UMF18N 2SA1774 and DTC144EE are housed independently in a EMT or UMT package. !Application Power management circuit !External dimensions (Units : mm) EMF18 0.22 (4) (5) (6) (3) (2) !Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. ROHM : EMT6 1.2 1.6 (1) 0.13 Each lead has same dimensions Abbreviated symbol : F18 !Structure Silicon epitaxial planar transistor UMF18N (4) 0.65 1.3 0.65 0.7 0.9 (3) 0.5 0.5 0.5 1.0 1.6 0.2 1.25 (3) (2) (1) 2.1 0.15 DTr2 R2 (4) R1 Tr1 0.1Min. 0to0.1 ROHM : UMT6 EIAJ : SC-88 (5) R1=47k R2=47k (6) Abbreviated symbol :F18 !Packaging specifications Type EMF18 UMF18N EMT6 UMT6 Package F18 F18 Marking T2R TR Code 3000 Basic ordering unit (pieces) 8000 (1) !Equivalent circuits (6) Each lead has same dimensions 2.0 (5) (2) 1/4 EMF18 / UMF18N Transistors !Absolute maximum ratings (Ta=25C) Tr1 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits -60 -50 -6 -150 150 (TOTAL) 150 -55~+150 Unit V V V mA mW C C 120mW per element must not be exceeded. DTr2 Limits Parameter Symbol 50 VCC Supply voltage -10~+40 VIN Input voltage 100 IC Collector current 30 IO Output current 150(TOTAL) PC Power dissipation Tj 150 Junction temperature Tstg -55~+150 Range of storage temperature 1 Characteristics of built-in transistor. 2 120mW per element must not be exceeded. Each terminal mounted on a recommended land. Unit V V mA mA mW C C 1 2 !Electrical characteristics (Ta=25C) Tr1 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. -60 -50 -6 - - - 120 - - Typ. - - - - - - - 140 4 Max. - - - -0.1 -0.1 -0.5 560 - 5 Unit V V V A A V - MHz pF IC = -50A IC = -1mA IE = -50A VCB = -60V VEB = -6V IC/IB = -50mA/-5mA VCE = -6V, IC = -1mA VCE = -12V, IE = 2mA, f = 100MHz VCB = -12V, IE = 0A, f = 1MHz Conditions DTr2 Parameter Input voltage Output voltage Input current Output current DC current gain Transition frequency Input resistance Resistance ratio Characteristics of built-in transistor. Symbol VI(off) VI(on) VO(on) II IO(off) GI fT R1 R2/R1 Min. - 3.0 - - - 68 - 32.9 0.8 Typ. - - 100 - - - 250 47 1.0 Max. 0.5 - 300 180 500 - - 61.1 1.2 Unit V V mV A nA - MHz k - Conditions VCC=5V, IO=100A VO=0.3V, IO=2mA VO=10mA, II=0.5mA VI=5V VCC=50V, VI=0V VO=5V, IO=5mA VCE=10V, IE=-5mA, f=100MHz - - 2/4 EMF18 / UMF18N Transistors !Electrical characteristic curves Tr1 -50 COLLECTOR CURRENT : Ic (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Ta = 100C 25C -20 -40C -10 -5 -2 -1 -0.5 -0.2 -0.1 VCE = -6V -10 -35.0 Ta = 25C -31.5 -28.0 -24.5 -100 Ta = 25C -500 -450 -400 -350 -300 -8 -80 -6 -21.0 -17.5 -60 -250 -200 -4 -14.0 -10.5 -40 -150 -100 -2 -7.0 -3.5A IB = 0 -20 -50A IB = 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 0 -0.4 -0.8 -1.2 -1.6 -2.0 0 -1 -2 -3 -4 -5 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics ( ) Fig.3 Grounded emitter output characteristics ( ) 500 Ta = 25C VCE = -5V -3V -1V 500 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) -1 Ta = 100C 25C Ta = 25C DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE -0.5 200 200 -40C -0.2 100 100 IC/IB = 50 -0.1 20 10 50 50 -0.05 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 VCE = -6V -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( ) Fig.5 DC current gain vs. collector current ( ) Fig.6 Collector-emitter saturation voltage vs. collector current ( ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) -1 1000 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) TRANSITION FREQUENCY : fT (MHz) lC/lB = 10 Ta = 25C VCE = -12V 20 Cib 10 -0.5 500 Ta = 25C f = 1MHz IE = 0A IC = 0A Co b -0.2 200 5 -0.1 Ta = 100C 25C -40C 100 2 -0.05 50 0.5 1 2 5 10 20 50 100 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 -0.5 -1 -2 -5 -10 -20 COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector-emitter saturation voltage vs. collector current ( ) Fig.8 Gain bandwidth product vs. emitter current Fig.9 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 3/4 EMF18 / UMF18N Transistors DTr2 100 50 OUTPUT CURRENT : Io (A) VO=0.3V 10m 5m VCC=5V 1k 500 DC CURRENT GAIN : GI VO=5V Ta=100C 25C -40C INPUT VOLTAGE : VI(on) (V) 20 10 5 2 1 500m 200m 100m 100 200 500 1m 2m 5m 10m 20m 50m 100m Ta=-40C 25C 100C 2m Ta=100C 25C 1m -40C 500 200 100 50 20 10 5 2 1 0 200 100 50 20 10 5 2 0.5 1.0 1.5 2.0 2.5 3.0 1 100 200 500 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI(off) (V) OUTPUT CURRENT : IO (A) Fig.9 Input voltage vs. output current (ON characteristics) Fig.10 Output current vs. input voltage (OFF characteristics) Fig.11 DC current gain vs. output current 1 500m OUTPUT VOLTAGE : VO(on) (V) lO/lI=20 Ta=100C 25C -40C 200m 100m 50m 20m 10m 5m 2m 1m 100 200 500 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.12 Output voltage vs. output current 4/4 |
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