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EMF23XV6T5 Product Preview Dual Transistor - Power Management NPN/PNP Dual (Complimentary) * Low VCE(SAT), t0.5 V * This is a Pb-Free Device (3) http://onsemi.com (2) R1 (1) MAXIMUM RATINGS Q1 Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Q2 Rating Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current - Continuous Symbol VCEO VCBO VEBO IC Value -60 -50 -6.0 -100 Unit V V V mAdc 6 54 3 12 Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc Q1 R2 (4) Q2 (5) (6) SOT-563 CASE 463A PLASTIC THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation Derate above 25C Thermal Resistance, Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Range 1. FR-4 @ Minimum Pad. RqJA TJ, Tstg TA = 25C RqJA TA = 25C MARKING DIAGRAM Symbol PD Max 357 (Note 1) 2.9 (Note 1) 350 (Note 1) Max 500 (Note 1) 4.0 (Note 1) 250 (Note 1) -55 to +150 Unit mW mW/C C/W UW = Specific Device Code D = Date Code UW D Symbol PD Unit mW mW/C C/W C ORDERING INFORMATION Device EMF23XV6T5 Package SOT-563 Shipping 2 mm Pitch 8000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. (c) Semiconductor Components Industries, LLC, 2004 1 February, 2004 - Rev. P1 Publication Order Number: EMF23XV6/D EMF23XV6T5 ELECTRICAL CHARACTERISTICS (TA = 25C) Characteristic Q1: NPN Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) DC Current Gain (VCE = 10 V, IC = 5.0 mA) Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) Input Resistor Resistor Ratio Q2: PNP Collector-Base Breakdown Voltage (IC = -50 mAdc, IE = 0) Collector-Emitter Breakdown Voltage (IC = -1.0 mAdc, IB = 0) Emitter-Base Breakdown Voltage (IE = -50 mAdc, IE = 0) Collector-Base Cutoff Current (VCB = -30 Vdc, IE = 0) Emitter-Base Cutoff Current (VEB = -5.0 Vdc, IB = 0) Collector-Emitter Saturation Voltage (Note 3) (IC = -50 mAdc, IB = -5.0 mAdc) DC Current Gain (Note 3) (VCE = -6.0 Vdc, IC = -1.0 mAdc) Transition Frequency (VCE = -12 Vdc, IC = -2.0 mAdc, f = 30 MHz) Output Capacitance (VCB = -12 Vdc, IE = 0 Adc, f = 1.0 MHz) V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) hFE fT COB -60 -50 -6.0 - - - 120 - - - - - - - - - 140 3.5 - - - -0.5 -0.5 -0.5 560 - - Vdc Vdc Vdc nA mA Vdc - MHz pF ICBO ICEO IEBO V(BR)CBO V(BR)CEO hFE VCE(sat) VOL VOH R1 R1/R2 - - - 50 50 35 - - 4.9 7.0 0.8 - - - - - 60 - - - 10 1.0 100 500 0.5 - - - 0.25 0.2 - 13 1.2 nAdc nAdc mAdc Vdc Vdc - Vdc Vdc Vdc kW - Symbol Min Typ Max Unit 2. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. 3. Pulse Test: Pulse Width 300 ms, D.C. 2%. http://onsemi.com 2 EMF23XV6T5 TYPICAL ELECTRICAL CHARACTERISTICS -- Q1, NPN VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = -25C 25C 0.1 75C 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = 75C 25C -25C 100 0.01 0.001 0 20 40 IC, COLLECTOR CURRENT (mA) 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 1. VCE(sat) versus IC Figure 2. DC Current Gain 4 f = 1 MHz IE = 0 V TA = 25C 100 75C IC, COLLECTOR CURRENT (mA) 10 1 0.1 0.01 25C TA = -25C Cob , CAPACITANCE (pF) 3 2 1 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 3. Output Capacitance Figure 4. Output Current versus Input Voltage 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 25C 75C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 5. Input Voltage versus Output Current http://onsemi.com 3 EMF23XV6T5 TYPICAL ELECTRICAL CHARACTERISTICS - Q2, PNP 1000 TA = 25C IC, COLLECTOR CURRENT (mA) 120 90 60 30 0 DC CURRENT GAIN TA = 75C 300 mA 250 200 150 100 IB = 50 mA 0 3 6 9 12 15 10 0.1 1 10 100 TA = - 25C TA = 25C VCE = 10 V 100 VCE, COLLECTOR VOLTAGE (V) IC, COLLECTOR CURRENT (mA) Figure 6. IC - VCE VCE , COLLECTOR-EMITTER VOLTAGE (V) 2 TA = 25C COLLECTOR VOLTAGE (mV) 1.5 900 800 700 600 500 400 300 200 100 0 0.01 0.1 1 IB, BASE CURRENT (mA) 10 100 0 0.2 0.5 1 Figure 7. DC Current Gain 1 0.5 TA = 25C VCE = 5 V 5 10 20 40 60 80 100 150 200 IC, COLLECTOR CURRENT (mA) Figure 8. Collector Saturation Region 13 Cib, INPUT CAPACITANCE (pF) 12 Cob, CAPACITANCE (pF) 11 10 9 8 7 6 0 1 2 VEB (V) 3 4 14 12 10 8 6 4 2 0 0 10 Figure 9. On Voltage 20 VCB (V) 30 40 Figure 10. Capacitance Figure 11. Capacitance http://onsemi.com 4 EMF23XV6T5 PACKAGE DIMENSIONS SOT-563, 6 LEAD CASE 463A-01 ISSUE A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. MILLIMETERS MIN MAX 1.50 1.70 1.10 1.30 0.50 0.60 0.17 0.27 0.50 BSC 0.08 0.18 0.10 0.30 1.50 1.70 INCHES MIN MAX 0.059 0.067 0.043 0.051 0.020 0.024 0.007 0.011 0.020 BSC 0.003 0.007 0.004 0.012 0.059 0.067 A -X- C K 4 6 5 1 2 3 B -Y- S D G 5 6 PL M J XY 0.08 (0.003) DIM A B C D G J K S STYLE 1: PIN 1. EMITTER 1 2. BASE 1 3. COLLECTOR 2 4. EMITTER 2 5. BASE 2 6. COLLECTOR 1 SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.0 0.0394 1.35 0.0531 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm inches SOT-563 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 EMF23XV6T5 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 EMF23XV6/D |
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