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 IMT4
DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features
* * * Epitaxial Planar Die Construction Complementary NPN Type Available (IMX8) Small Surface Mount Package
A
NEW PRODUCT
SOT-26
B2 B1 E1
Dim
BC
C2 E2 C1
Min 0.35 1.50 2.70 3/4 3/4 2.90 1.00 0.35 0.10 0
Max 0.50 1.70 3.00 3/4 3/4 3.10 1.30 0.55 0.20 8
Typ 0.38 1.60 2.80 0.95 0.55 3.00 0.05 1.10 0.40 0.15 3/4
A B C D F
M
Mechanical Data
* * * * * * * * Case: SOT-26, Molded Plastic Case material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: KX7, See Page 2 Ordering & Date Code Information: See Page 2 Weight: 0.016 grams (approx.)
K
H
H J K L M a
J
0.013 0.10
D
B2 B1 E1
F
L
C2
E2
C1
All Dimensions in mm
Maximum Ratings
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
@ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG IMT4 -120 -120 -5.0 -50 225 555 -55 to +150 Unit V V V mA mW C/W C
Characteristic
Collector Current - Continuous Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range
Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 2) DC Current Gain Collector-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product Notes:
@ TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(SAT) Min -120 -120 -5.0 3/4 3/4 180 3/4 3/4 Typ 3/4 3/4 3/4 3/4 3/4 3/4 3/4 Max 3/4 3/4 3/4 -0.5 -0.5 820 -0.5 Unit V V V mA mA 3/4 V Test Condition IC = -50mA IC = -1.0mA IE = -50mA VCB = -100V VEB = -4.0V IC = -2.0mA, VCE = -6.0V IC = -10mA, IB = -1.0mA VCE = -12V, IE = 2.0mA, f = 100MHz
fT
140
3/4
MHz
1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 200mW per element must not be exceeded. 2. Short duration pulse test used to minimize self-heating effect.
DS30303 Rev. 2 - 2
1 of 3 www.diodes.com
IMT4
NEW PRODUCT
Ordering Information
Device IMT4-7 Notes:
(Note 3) Packaging SOT-26 Shipping 3000/Tape & Reel
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
KX7
KX7 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September
Date Code Key Year Code Month Code Jan 1 2002 N Feb 2 2003 P March 3 Apr 4 2004 R May 5 2005 S Jun 6 Jul 7 2006 T Aug 8 2007 U Sep 9 Oct O 2008 V Nov N 2009 W Dec D
YM
250
(see Note 1)
500 Ta = 75C 400 hFE, DC CURRENT GAIN Ta = 25C
Pd, POWER DISSIPATION (mW)
200
150
300
100
200
Ta = -25C
50
100 VCE = 6V
0 0 100 TA, AMBIENT TEMPERATURE (C) Fig. 1, Power Derating Curve 200
0 1.0 10.0 100 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical DC Current Gain vs. Collector Current
DS30303 Rev. 2 - 2
2 of 3 www.diodes.com
IMT4
100
NEW PRODUCT
VCE = 6V IC, COLLECTOR CURRENT (mA) Ta = 25C 10.0 Ta = 75C
1.0
Ta = -25C 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VBE(ON), BASE-EMITTER VOLTAGE (V) Fig. 3 Typical Collector Current vs. Base-Emitter Voltage
VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V)
1.0 Ta = 150C fT, GAIN BANDWIDTH PRODUCT (MHz) IC/IB = 10
1000 VCE = 5V
100
0.100
Ta = 25C
Ta = -50C
10
0.010 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Collector-Emitter Voltage vs. Collector Current
7 Ta = 25C 6
1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Gain Bandwidth Product vs. Collector Current 100
IC, COLLECTOR CURRENT (mA)
5 4 3 2 1 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 6 Typical Collector Current vs. Collector-Emitter Voltage
DS30303 Rev. 2 - 2
3 of 3 www.diodes.com
IMT4


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