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Provisional Data Sheet No. PD-9.1396
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET TRANSISTOR
(R)
IRHNA7160 IRHNA8160
N-CHANNEL
MEGA RAD HARD
100 Volt, 0.045, MEGA RAD HARD HEXFET
International Rectifier's RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier's RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the RAD HARD process utilizes International Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in the industry. RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments.
Product Summary
Part Number IRHNA7160 IRHNA8160 BVDSS 100V 100V RDS(on) 0.045 0.045 ID 51A 51A
Features:
n n n n n n n n n n n n n
Radiation Hardened up to 1 x 10 6 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Lightweight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25C Continuous Drain Current ID @ VGS = 12V, TC = 100C Continuous Drain Current IDM Pulsed Drain Current PD @ TC = 25C Max. Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy I AR Avalanche Current EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt TJ Operating Junction TSTG Storage Temperature Range Package Mounting Surface Temperature Weight 51 32.5 204 300 2.0 20 500 51 30 5.5 -55 to 150
Pre-Radiation
IRHNA7160, IRHNA8160 Units A
W W/K V mJ A mJ V/ns
oC
300 (for 5 sec.) 3.3 (typical)
g
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Pre-Radiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min.
100 -- -- -- 2.0 12 -- -- -- -- -- -- -- -- -- -- -- --
Typ. Max. Units
-- 0.13 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 8.7 -- -- 0.045 0.050 4.0 -- 25 250 100 -100 224 50 90 65 265 240 180 -- V V/C V S( ) A nA nC
Test Conditions
VGS = 0V, ID = 1.0 mA Reference to 25C, ID = 1.0 mA VGS = 12V, ID =32.5 A VGS = 12V, ID = 51A VDS = VGS, ID = 1.0 mA VDS > 15V, IDS = 32.5A VDS = 0.8 x Max Rating,VGS = 0V VDS = 0.8 x Max Rating VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, I D = 51A VDS = Max. Rating x 0.5 VDD = 50V, ID =51 A, RG = 2.35
IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance
ns
LS
Internal Source Inductance
--
8.7
--
nH
Measured from the Modified MOSFET drain lead, 6mm (0.25 symbol showing the in.) from package to internal inductances. center of die. Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad.
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
6000 1700 280
-- -- --
pF
VGS = 0V, VDS = 25V f = 1.0 MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS I SM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode)
Min. Typ. Max. Units
-- -- -- -- 51 204
Test Conditions
Modified MOSFET symbol showing the integral reverse p-n junction rectifier.
A
VSD t rr Q RR t on
Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Tj = 25C, IS = 51A, VGS = 0V Tj = 25C, IF = 51A, di/dt 100A/s VDD 50V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. -- -- -- -- -- -- 1.8 570 5.8 V ns C
Thermal Resistance
Parameter
RthJC RthJ-PCB Junction-to-Case Junction-to-PC board
Min. Typ. Max. Units
-- -- -- TBD 0.42 K/W --
Test Conditions
soldered to a copper-clad PC board
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Radiation Characteristics
Radiation Performance of Rad Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs are tested to verify their hardness capability. The hardness assurance program at International Rectifier uses two radiation environments. Every manufacturing lot is tested in a low dose rate (total dose) environment per MlL-STD-750, test method 1019. International Rectifier has imposed a standard gate voltage of 12 volts per note 6 and a VDSS bias condition equal to 80% of the device rated voltage per note 7. Pre- and post-radiation limits of the devices irradiated to 1 x 105 Rads (Si) are identical and are presented in Table 1, column 1, IRHNA7160. The values in Table 1 will be met for either of the two low dose rate test circuits that are used. Both pre- and post-radiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. It should be noted that at a radiation level of 1 x 105 Rads (Si), no change in limits are specified in DC parameters. High dose rate testing may be done on a special request basis, using a dose rate up to 1 x 1012 Rads (Si)/Sec. International Rectifier radiation hardened HEXFETs have been characterized in neutron and heavy ion Single Event Effects (SEE) environments. Single Event Effects characterization is shown in Table 3.
Table 1. Low Dose Rate
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on)1 VSD
IRHNA7160 IRHNA8160
100K Rads (Si) 1000K Rads (Si) Units
Test Conditions
min. Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance One Diode Forward Voltage
max.
min. 100 1.25 -- -- -- -- --
max. -- 4.5 100 -100 50 0.062 1.8 VGS = 0V, ID = 1.0 mA VGS = VDS, ID = 1.0 mA VGS = 20V nA VGS = -20V A VDS = 0.8 x Max Rating, VGS = 0V VGS = 12V, ID =32.5A V V TC = 25C, IS = 51A,VGS = 0V
100 -- 2.0 4.0 -- 100 -- -100 -- 25 -- 0.045 -- 1.8
Table 2. High Dose Rate
Parameter
VDSS IPP di/dt L1
1011 Rads (Si)/sec 1012 Rads (Si)/sec
Drain-to-Source Voltage
Min. Typ Max. Min. Typ. Max. Units Test Conditions -- -- 80 ---- 80 V Applied drain-to-source voltage during gamma-dot -- 140 -- -- 140 -- A Peak radiation induced photo-current -- -- 800 -- -- 160 A/sec Rate of rise of photo-current 0.1 -- -- 0.5 -- -- H Circuit inductance required to limit di/dt
Table 3. Single Event Effects
Parameter
BV DSS
Typ.
100
Units
V
Ion
Ni
LET (Si) (MeV/mg/cm2)
28
Fluence (ions/cm2)
1 x 105
Range (m)
~41
VDS Bias (V)
100
VGS Bias (V)
-5
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IRHNA7160, IRHNA8160 Devices
Repetitive Rating; Pulse width limited by
maximum junction temperature. Refer to current HEXFET reliability report. @ VDD = 25V, Starting T J = 25C, EAS = [0.5 * L * (IL2) * [BVDSS/(BVDSS-VDD)] Peak IL = 51A, VGS = 12V, 25 RG 200 ISD 51A, di/dt 170 A/s, VDD BV DSS, T J 150C Suggested RG = 2.35 Pulse width 300 s; Duty Cycle 2% K/W = C/W W/K = W/C
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Radiation Characteristics
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019. Total Dose Irradiation with VDS Bias. VDS = 0.8 rated BVDSS (pre-radiation) applied and V GS = 0 during irradiation per MlL-STD-750, method 1019. This test is performed using a flash x-ray source operated in the e-beam mode (energy ~2.5 MeV), 30 nsec pulse. Process characterized by independent laboratory. All Pre-Radiation and Post-Radiation test conditions are identical to facilitate direct comparison for circuit applications.

Case Outline and Dimensions -- SMD2
LEADASSIGNMENTS 1 = DRAIN 2 = GA TE 3 = SOURCE NOTES: 1 DIMENSIONINGANDTOLERANCINGPERANSIY14.5M-1982 2.CONTROLLING DIMENSION: INCH 3. DIMENSIONSARESHOWNINMILLIMETERS(INCHES) 4 DIMENSIONINCLUDESMET ALLIZA TIONFLASH 5 DIMENSIONDOESNOTINCLUDEMET ALLIZA TIONFLASH
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