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| SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Including two(TR, Diode) devices in TSV. (Thin Super Mini type with 5 pin) Simplify circuit design. Reduce a quantity of parts and manufacturing process. A F G 1 KTX311T EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE E B 5 DIM MILLIMETERS _ A 2.9 + 0.2 B C D E F G H I J K L 1.6+0.2/-0.1 _ 0.70 + 0.05 _ 0.4 + 0.1 2.8+0.2/-0.3 _ 1.9 + 0.2 0.95 _ 0.16 + 0.05 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 2 3 4 G EQUIVALENT CIRCUIT (TOP VIEW) C 5 4 h FE Rank D1 Q1 5 4 J Lot No. 1. D 1 2. Q 1 3. Q 1 4. Q 1 5. D 1 ANODE EMITTER BASE COLLECTOR CATHODE Type Name C 1 2 3 1 2 3 MARK SPEC KTX311T Type Q1 hFE Rank : Y Mark CB Q1 hFE Rank : GR CC KTX311T MAXIMUM RATINGS (Ta=25 TRANSISTOR Q1 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC IE PC * Tj Tstg 0.8 ) RATING -30 -20 -5 -1 1 0.9 150 -55~150 UNIT V V V A A * Package mounted on a ceramic board (600 DIODE D1 CHARACTERISTIC Repetitive Peak Reverse Voltage Reverse Voltage Average Forward Current Non-Repetitive Peak Surge current Junction Temperature Storage Temperature SYMBOL VRRM VR IO IFSM Tj Tstg RATING 25 20 1.0 3 125 -55~125 2002. 8. 13 Revision No : 2 I Marking L J H TSV D UNIT V V A 1/4 KTX311T ELECTRICAL CHARACTERISTICS (Ta=25 ) TRANSISTOR Q1 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Note) hFE Classification Y:120~240, SYMBOL ICBO IEBO hFE(1) (Note) hFE(2) VCE(SAT) VBE(SAT) fT Cob GR:200~400. TEST CONDITION VCB=-20V, IE=0 VEB=-5V, IC=0 VCE=-2V, IC=-50 VCE=-2V, IC=-1A (Pulse) IC=-500 IC=-500 , IB=-50 , IB=-50 MIN. 120 30 TYP. -0.15 -0.85 180 25 MAX. -0.1 -0.1 400 -0.3 -1.2 V V UNIT. VCE=-10V, IC=-50 VCB=-10V, IE=0, f=1 DIODE D1 CHARACTERISTIC Forward Voltage Reverse Current SYMBOL VF IR IF=1.0A VR=20V TEST CONDITION MIN. TYP. 0.4 MAX. 0.45 200 UNIT. V 2002. 8. 13 Revision No : 2 2/4 KTX311T D 1 (DIODE) 1 FORWARD CURRENT I F (A) IF - V F 10 REVERSE CURRENT I R (mA) 10 1 100 10 1 0.1 2 I R - VR Ta=125 Ta=75 C 100m Ta Ta =7 5 10m Ta =25 Ta =2 5 2 =1 C C C 5 C C C Ta=25 C Ta=-25 1m 0.1m 0 0.1 0.2 0.3 0.4 0.5 0 10 20 30 40 FORWARD VOLTAGE VF (V) REVERSE VOLTAGE V R (V) Q 1 (PNP TRANSISTOR) I C - VCE -800 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) I B =-10mA IB =-8mA IB =-6mA I C - VCE -1000 0m A =-5 0m A 20 m A -10 -600 -800 -600 -400 -200 IB =- I B=-1 0mA IB IB = I B =-30mA I B =-5mA I B =-3mA -400 IB =-4mA IB =-2mA I B =-1mA -200 0 0 -1 -2 -3 -4 IB =0mA I B =-1mA 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 COLLECTOR-EMITTER VOLTAGE V CE (V) -5 -6 -7 -8 COLLECTOR-EMITTER VOLTAGE V CE (V) I C - VBE COLLECTOR-EMITTER SATURATION VOLTAGE VCE (V) -1.4 COLLECTOR CURRENT IC (A) -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 BASE-EMITTER VOLTAGE V BE (V) VCE =-2V VCE(sat) - I C -2.0 -1.0 -0.5 -0.3 -0.1 0.05 -0.03 -0.01 -10 IC /I B =10 -30 -100 -300 -1K -3K -10K COLLECTOR CURRENT I C (mA) 2002. 8. 13 Revision No : 2 3/4 KTX311T f T - IC TRANSITION FREQUENCY f T (MHz) 2K 1K 500 300 100 50 30 10 -1 -3 -10 -30 -100 -300 -1K COLLECTOR CURRENT I C (mA) VCE =-10V h FE - I C -500 -300 DC CURRENT GAIN h FE -100 -50 -30 -10 -5 -3 -1 -1 VCE =-2V -3 -10 -30 -100 -300 -1K -3K -10K COLLECTOR CURRENT I C (mA) 2002. 8. 13 Revision No : 2 4/4 |
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