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MBRM560 5A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER POWERMITEa3 Features * * * * * Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency Low Reverse Current For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications Plastic Material: UL Flammability Classification Rating 94V-0 1 NEW PRODUCT A P 3 E G POWERMITEa3 Dim A B Min 4.03 6.40 Max 4.09 6.61 B 2 J H C D E G H .889 NOM 1.83 NOM 1.10 5.01 4.37 .71 .36 1.73 1.14 5.17 4.43 .77 .46 1.83 .178 NOM Mechanical Data * * * * * Case: POWERMITEa3, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Marking: See Sheet 3 Weight: 0.072 grams (approx.) D C PIN 1 PIN 2 M K C L PIN 3, BOTTOMSIDE HEAT SINK J K L M P .178 NOM Note: Pins 1 & 2 must be electrically connected at the printed circuit board. All Dimensions in mm Maximum Ratings @ TA = 25C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (See also Figure 5) Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave Superimposed on Rated Load (JEDEC Method) @ TC = 90C Typical Thermal Resistance Junction to Soldering Point Operating Temperature Range Storage Temperature Range Symbol VRRM VRWM VR VR(RMS) IO IFSM RqJS Tj TSTG @ TA = 25C unless otherwise specified Symbol V(BR)R VFM Min 60 3/4 3/4 3/4 3/4 3/4 3/4 Typ 3/4 0.65 0.56 0.74 0.64 2 0.6 Max 3/4 0.69 0.60 0.78 0.68 200 20 Unit V V mA mA Test Condition IR = 0.2mA IF = 5A, TJ = 25C IF = 5A, TJ = 125C IF = 8A, TJ = 25C IF = 8A, TJ = 125C TJ = 25C, VR = 60V TJ = 100C, VR = 60V Value 60 42 5 100 2.7 -55 to +125 -55 to +150 Unit V V A A C/W C C Electrical Characteristics Characteristic Reverse Breakdown Voltage (Note 1) Forward Voltage (Note 1) Reverse Current (Note 1) IRM Notes: 1. Short duration test pulse used to minimize self-heating effect. DS30299 Rev. 2 - 2 1 of 3 MBRM560 IR, INSTANTANEOUS REVERSE CURRENT (mA) IF, INSTANTANEOUS FORWARD CURRENT (A) 100 10,000 Tj = 125C NEW PRODUCT 1000 Tj = 100C 10 Tj = 125C 100 Tj = 75C 1.0 Tj = 100C Tj = 25C 10 0.1 1.0 Tj = 25C 0.01 0 0.2 0.4 0.6 0.8 VF, INSTANTANEOUS F0RWARD VOLTAGE (V) Fig. 1 Typical Forward Characteristics 0.1 0 10 20 30 40 50 60 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 2 Typical Reverse Characteristics IFSM, PEAK FORWARD SURGE CURRENT (A) 100 1000 80 60 CT, TOTAL CAPACITANCE (pF) Single Half-Sine-Wave (JEDEC Method) TC = 90C f = 1MHz 100 40 20 0 1 10 100 NUMBER OF CYCLES AT 60Hz Fig. 3 Max Non-Repetitive Peak Fwd Surge Current 10 0 15 30 45 60 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Capacitance vs. Reverse Voltage DS30299 Rev. 2 - 2 2 of 3 MBRM560 PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) 7.5 3.5 3.0 2.5 2.0 1.5 Note 3 1.0 0.5 0 0 NEW PRODUCT Note 2 IF, DC FORWARD CURRENT (A) 6.0 Note 1 4.5 Note 2 3.0 1.5 Note 3 0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 5 DC Forward Current Derating 7 4 1 2 5 3 6 IF(AV), AVERAGE FORWARD CURRENT (A) Fig. 6 Forward Power Dissipation Notes: 1. TA = TSOLDERING POINT, RqJS = 2.7C/W, RqSA = 0C/W. 2. Device mounted on GETEK substrate, 2"x2", 2 oz. copper, double-sided, cathode pad dimensions 0.75" x 1.0", anode pad dimensions 0.25" x 1.0". RqJA in range of 20-40C/W. 3. Device mounted on FR-4 substrate, 2"x2", 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. RqJA in range of 100-130C/W. Ordering Information Device MBRM560-13 Notes: (Note 4) Packaging POWERMITEa3 Shipping 5000/Tape & Reel 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information MBRM560 YYWW MBRM560 = Product type marking code = Manufacturers' code marking YYWW = Date code marking YY = Last digit of year ex: 2 for 2002 WW = Week code 01 to 52 POWERMITE is a registered trademark of Microsemi Corporation. DS30299 Rev. 2 - 2 3 of 3 MBRM560 |
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