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| ZXMP2120FF 200V SOT23F P-channel enhancement mode MOSFET Summary V(BR)DSS -200 RDS(on) ( ) 28 @ VGS= -10V ID (mA) -137 Description This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and freedom from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of telecom and general high voltage circuits. Features * * * * * * High voltage Low on-resistance Fast switching speed Low gate drive Low threshold SOT23 FLAT package D G S Applications * Active clamping of primary side MOSFETs in 48 volt DC-DC converters S D Ordering information Device ZXMP2120FFTA Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3,000 G Top view Device marking 1C4 Issue 1 - January 2007 (c) Zetex Semiconductors plc 2007 1 www.zetex.com ZXMP2120FF Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current @ VGS= 10V; Tamb=25C(a) Pulsed drain current(c) Pulsed source current (body diode)(c) Power dissipation at Tamb=25C(a) Linear derating factor Power dissapation at Tamb=25C(b) Linear derating factor Operating and storage temperature range Tj, Tstg PD Symbol VDSS VGS ID IDM ISM PD Limit -200 20 -137 -0.8 -0.8 1 8 1.5 12.3 -55 to +150 Unit V V mA A A W mW/C W mW/C C Thermal resistance Parameter Junction to ambient(a) Junction to ambient(b) Symbol R JA R JA Limit 125 81 Unit C/W C/W NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 pcb measured at t 5 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction temperature. Issue 1 - January 2007 (c) Zetex Semiconductors plc 2007 2 www.zetex.com ZXMP2120FF Thermal characteristics Issue 1 - January 2007 (c) Zetex Semiconductors plc 2007 3 www.zetex.com ZXMP2120FF Electrical characteristics (at Tamb = 25C unless otherwise stated) Parameter Static Drain-source breakdown voltage V(BR)DSS -200 -10 -100 Gate-body leakage Gate-source threshold voltage Static drain-source on-state resistance (*) On-state drain current(*) IGSS VGS(th) RDS(on) ID(on) -300 50 -1.5 20 -3.5 28 mA mS V A A nA V ID= 1mA, VGS=0V VDS= -200V, VGS=0V VDS= -160V, VGS=0V, T=125C() VGS=20V, VDS=0V ID= 250 A, VDS=VGS VGS= -10V, ID= -150mA VDS= -25V, VGS=-10V VDS= -25V, ID= -150mA VDS= -25V, VGS=0V f=1MHz Symbol Min. Max. Unit Conditions Zero gate voltage drain current IDSS Forward transconductance(*) () gfs Dynamic() Input capacitance Output capacitance Reverse transfer capacitance Switching () () Turn-on-delay time Rise time Turn-off delay time Fall time td(on) tr td(off) tf Ciss Coss Crss 100 25 7 pF pF pF 7 15 12 15 ns ns ns ns VDD= -25V, VGS= -10V ID= -150mA RSOURCE 50 NOTES: (*) Measured under pulsed conditions. Pulse width 300 s; duty cycle 2%. () Switching characteristics are independent of operating junction temperature. () For design aid only, not subject to production testing. Issue 1 - January 2007 (c) Zetex Semiconductors plc 2007 4 www.zetex.com ZXMP2120FF Typical charateristics ID(On) -On-State Drain Current (Amps) ID(On) -On-State Drain Current (Amps) VGS= -10V - 8V -7V -6V -0.4 -0.4 VGS= -10V - 8V - 7V -6V -0.6 -0.3 - 5V -0.2 -4.5V -0.1 -4V -3.5V 0 0 -2 -4 -6 -8 -10 -5V -0.2 -4.5V - 4V 0 0 -20 -40 -60 -80 -3.5V -100 VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts) Output Characteristics Saturation Characteristics ID(On)-On-State Drain Current (Amps) -20 VDS-Drain Source Voltage (Volts) -18 -16 -14 -12 -10 -8 -6 -4 -2 0 0 -2 -4 -6 -8 ID= -300mA VDS= -25V -0.6 -0.4 -10V -0.2 -200mA -100mA -50mA -10 0 0 -2 -4 -6 -8 -10 VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) Voltage Saturation Characteristics RDS(ON) -Drain Source Resistance () Transfer Characteristics 100 2.6 Normalised RDS(on) and VGS(th) 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -40 -20 0 a ist es eR rc ou -S in a Dr eR nc n) (o DS 50 ID= -300mA -200mA -I00mA -50mA VGS=-10V ID=-0.1A VGS=VDS ID=-1mA Gate Thresh old Voltage VGS(th) 10 -1 -10 -20 20 40 60 80 100 120 140 160 180 VGS-Gate Source Voltage (Volts) T-Temperature (C) On-resistance vs gate-source voltage Normalised RDS(on) and VGS(th) vs Temperature Issue 1 - January 2007 (c) Zetex Semiconductors plc 2007 5 www.zetex.com ZXMP2120FF Typical characteristics 200 200 VDS=-25V gfs-Transconductance (mS) 160 140 120 100 80 60 40 20 0 0 -0.2 -0.4 gfs-Transconductance (mS) 180 180 160 140 120 100 80 60 40 20 0 0 -2 -4 -6 -8 -10 VDS=-25V -0.6 -0.8 ID- Drain Current (Amps) VGS-Gate Source Voltage (Volts) Transconductance v drain current Transconductance v gate-source voltage VGS-Gate Source Voltage (Volts) 0 ID=- 0.4A -2 -4 -6 -8 -10 -12 -14 -16 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 VDS= -50V -100V -180V 100 C-Capacitance (pF) 80 Ciss 60 40 20 Coss Crss 0 -10 -20 -30 -40 -50 VDS-Drain Source Voltage (Volts) Q -C ha rge (nC) Capacitance v drain-source voltage Gate charge v gate-source voltage Issue 1 - January 2007 (c) Zetex Semiconductors plc 2007 6 www.zetex.com ZXMP2120FF Typical characteristics Current regulator QG 12V 0.2 F 50k Same as D.U.T VG QGS QGD VDS IG D.U.T ID VGS Charge Basic gate charge waveform Gate charge test circuit VDS 90% VGS RG RD VDS VCC 10% VGS tr t(on) td(off) tr t(on) td(on) Pulse width 1 S Duty factor 0.1% Switching time waveforms Switching time test circuit Issue 1 - January 2007 (c) Zetex Semiconductors plc 2007 7 www.zetex.com ZXMP2120FF Intentionally left blank Issue 1 - January 2007 (c) Zetex Semiconductors plc 2007 8 www.zetex.com ZXMP2120FF Package outline - SOT23F D b b L1 L c e1 e E1 E E2 b R A A1 Dim. A A1 b c D e e1 Millimeters Min. 0.80 0.00 0.35 0.10 2.80 1.80 Max. 1.00 0.10 0.45 0.20 3.00 2.00 Inches Min. 0.0315 0.00 0.0153 0.0043 0.1102 0.0709 Max. 0.0394 0.0043 0.0161 0.0079 0.1181 0.0787 Dim. E E1 E2 L L1 R O Millimeters Min. 2.30 1.50 1.10 0.48 0.30 0.05 0 Max. 2.50 1.70 1.26 0.68 0.50 0.15 12 Inches Max. 0.0906 0.0590 0.0433 0.0189 0.0153 0.0019 0 Max. 0.0984 0.0669 0.0496 0.0268 0.0161 0.0059 12 0.95 ref 0.0374 ref Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Issue 1 - January 2007 (c) Zetex Semiconductors plc 2007 9 www.zetex.com ZXMP2120FF Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user's application and meets with the user's requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. Life support Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Reproduction The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. Terms and Conditions All products are sold subjects to Zetex' terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement. For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office. Quality of product Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer. To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our regionally authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels. ESD (Electrostatic discharge) Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of being affected should be replaced. Green compliance Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the use of hazardous substances and/or emissions. All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE and ELV directives. Product status key: "Preview" Future device intended for production at some point. Samples may be available "Active" Product status recommended for new designs "Last time buy (LTB)" Device will be discontinued and last time buy period and delivery is in effect "Not recommended for new designs" Device is still in production to support existing designs and production "Obsolete" Production has been discontinued Datasheet status key: "Draft version" This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. "Provisional version" This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. "Issue" This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice. Zetex sales offices Europe Zetex GmbH Kustermann-park Balanstrae 59 D-81541 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com (c) 2007 Published by Zetex Semiconductors plc Issue 1 - January 2007 (c) Zetex Semiconductors plc 2007 10 www.zetex.com |
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